BR 123 Search Results

PC21002

Contextual Info: Data Sheet, Rev. 1.4, Jun. 2005 HYS72D64301[G/H]BR–[5/6]–B H YS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR– HYS72D128xxx[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR– HYS72D256320[G/H]BR–[5/6/7]–B [5/6/7]–B

HYS72D128300

Abstract: DDR400 PC3200R-30331-C0 pc2100r 25330 z
Contextual Info: Data Sheet, Rev. 1.2, Dec. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

PC3200R-30331-C0

Contextual Info: Data Sheet, Rev. 1.1, Sep. 2004 HYS72D128300[G/H]BR–[5/6/7]–B H YS72D128300[G/H]BR– [5/6/7]–B HYS72D128321[G/H]BR–[5/6/7]–B HYS72D128321[G/H]BR– HYS72D256220[G/H]BR–[5/6/7]–B [5/6/7]–B HYS72D256320GBR–[6/7]–B HYS72D256220[G/H]BR–

pc2100r 25330 z

Abstract: cmos 4070 pc2700r-25330-c0 32 h 380 a 63 DDR400 DDR400B HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320
Contextual Info: March 2007 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Internet Data Sheet Rev. 1.32 Internet Data Sheet

pc2700r-25330-c0

Abstract: DDR400 HYS72D128320 HYS72D32300 HYS72D64300 HYS72D64320 HYS72D64300GBR-6-C
Contextual Info: Data Sheet, Rev. 1.2, Oct. 2004 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

Contextual Info: Data Sheet, Rev. 1.3, Nov. 2005 HYS72D32300[G/H]BR–[5/6/7]–C HYS72D64300[G/H]BR–[5/6/7]–C HYS72D64320[G/H]BR–[5/6]–C HYS72D128320[G/H]BR–[6/7]–C 184-Pin Registered Double Data Rate SDRAM Module Reg DIMM DDR SDRAM Memory Products N e v e r s t o p

Contextual Info: Transient Voltage Suppressors sa series 500 Watt Peak Power Rating/DO-15 TYPE Vwm NUMBER It V br @ It MAX MAX b@ vc @ Ipp a v br TYPE V WM NUMBER MAX MAX Id @ VwM vc @ mADC |jA DC h V BR @ IT Ipp a v br V A mV/°C Ipp V WM Ipp mADC pA DC V A mV/°C See Notes

1c6105a

Contextual Info: SENSITRON SEMICONDUCTOR TVS 2000 CATALOG 500 Watt Transient Voltage Suppressor Bi-directional Chip 6.8 to 200Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) 3-14 500W Min. V dc mA dc 1C6102 1C6102A 1C6103 1C6103A 1C6104 1C6104A 1C6105

TS16949

Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to

723 SOT-23

Abstract: mp sot 23 sot 89 weight
Contextual Info: MC C TM Micro Commercial Components Micro Commercial Components Corp. Component Weight Information Package Type Approx. Weight g Package Type Approx. Weight(g) A-405 0.240 PB-3 2.500 BR-6 5.000 PB-6 4.000 BR-8D 3.059 SOD-123FL 0.018 D2-PACK 1.700 PRESSFIT

tp4093

Abstract: TMPT5401 mA 723 TMPT2907 TP4221
Contextual Info: PNP TRANSISTORS ELECTRICAL CHARACTERISTICS at TA = 25°C ^CBO V Device Marking Type v BR CBO V ’ (BR)CEO (BR)EBO Max. @ V C8 (V) (V) (V) (nA) (V) v CE(MI) DC Current Gain K* @ lc @ v CE Max. @ lc Min. Max. (mA) (V) (V) (mA) Min. @ lc Cob1 t,1 (MHz) (mA)

PC3200R-30331-C0

Abstract: HYS72D128300GBR-5-B HYS72D256220GBR-5-B PC2700R-25330-D0 HYS72D128300HBR-6-B pc2100r 25330 z DDR400 DDR400B HYS72D64301 pc2700r-25330-c0
Contextual Info: January 2007 HYS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256320[G/H]BR–[5/6/7]–B 1 8 4 - P i n R e g i s t e r e d D o u bl e - D a t a - R a t e S D R A M M o d u l e DDR SDRAM RoHS Compliant Products

1N6102A

Abstract: 1N6103A 1N6104A 1N6105A 1N6106A 1N6107A 1N6108A 1N6109A 1N6137A 1N6121A
Contextual Info: 1N6102A thru 1N6137A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 287, REV - TRANSIENT VOLTAGE SUPPRESSER DIODES AXIAL LEAD and MELF TRANSIENT VOLTAGE SUPPRESSORS, 500W SERIES SERIES TYPE BREAKDOWN VOLTAGE I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE

Contextual Info: 1763-1230 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)40 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1743-1230 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)40 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 1748-1230 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120ö V(BR)CBO (V)120 I(C) Max. (A)40 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only Features * T-1 3/4 type package. * Long life-solid state reliability. * Low power consumption. * Pb Free and RoHS compliant * Halogen free product Cl < 900 ppm, Br < 900 ppm, and Cl + Br < 1500 ppm .

Contextual Info: SA5.0 - SA170A TRANSIENT VOLTAGE SUPPRESSOR V BR : 6.8 - 200 Volts P PK : 500 Watts DO - 41 FEATURES : * * * * 500W surge capability at 1ms Excellent clamping capability Low zener impedance Fast response time : typically less then 1.0 ps from 0 volt to V BR min.

diode MARKING CODE 18A

Abstract: AN-994 EIA-541 IRFR120 IRFU120
Contextual Info: IRFR/U3410PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current

max1786

Contextual Info: January 2009 HYS72D 64301E B R– [ 5 / 6 ] – D HYS72D 128300 E BR– [ 5 / 6 ] – D HYS72D 128321 E BR– [ 5 / 6 ] – D HYS72D 256320 E BR– [ 5 / 6 ] – D 1 8 4 - P i n R e g i s t e r e d D o u b l e - D a t a - R a t e SD R A M M o d u l e RDIMM

44e 938

Abstract: 2602B PBV 0,01 U2602 u2602br 7644E ms4u A 2602 16 pin A 2602 8 pin U2602B
Contextual Info: 44E D • 4S > Ö^EOO^b 0010413 1 ■ A L G G U 2602 BR * U 2602 BR-FP ZERO VOLTAGE SWITCH Temperature Control and or Safety Switch-off in Irons Technology: Bipolar TELEFUNKEN ELECTRONIC Features: • Voltage monitoring • Full wave logic/automatic pulse phase

Contextual Info: March 2008 HYS72D 64301E B R– [ 5 / 6 ] – D HYS72D 128300 E BR– [ 5 / 6 ] – D HYS72D 128321 E BR– [ 5 / 6 ] – D HYS72D 256320 E BR– [ 5 / 6 ] – D 1 8 4 - P i n R e g i s t e r e d D o u b l e - D a t a - R a t e SD R A M M o d u l e RDIMM RoHS Compliant

Contextual Info: Surface Mount Multilayer Ceramic Chip Capacitors DSCC Approved 03028 BR/BX Dielectrics Overview outlined by DSCC. KEMET is approved to DSCC (Defense Supply Center, Columbus) drawing no. 03028 for EIA 0603 case size SMD MLCCs in BR and BX dielectrics. DSCC drawing no. 03028 was developed in response to the