BR 101 TRANSISTOR Search Results

BR 101 Transistor

Abstract: AV733
Contextual Info: @vic AV733 TO-92 Plastic-Encapsulate Transistors AV733 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM : -0.1 A Collector-base voltage V BR CBO : -60 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

AV8050

Abstract: 1.5A NPN power transistor TO-92
Contextual Info: @vic AV8050 TO-92 Plastic-Encapsulate Transistors AV8050 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

102 TRANSISTOR

Abstract: ft 103 AV8550
Contextual Info: @vic AV8550 TO-92 Plastic-Encapsulate Transistors AV8550 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

AV945

Abstract: 102 TRANSISTOR 250 f 101 datasheet mv 103 TRANSISTOR BL 100
Contextual Info: @vic AV945 TO-92 Plastic-Encapsulate Transistors AV945 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : 0.15 A Collector-base voltage V BR CBO : 60 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

ft 103

Abstract: AV882 103 IC
Contextual Info: @vic AV882 TO-126 Plastic-Encapsulate Transistors AV882 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

AV772

Abstract: ft 103 Avic Electronics
Contextual Info: @vic AV772 TO-126 Plastic-Encapsulate Transistors AV772 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : - 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

TRANSISTOR ss101

Abstract: SS101 TO92 SS101 BR 101 Transistor Q62702-S493 Q62702-S636 Q62702-S484 E6288 transistor bss
Contextual Info: SIPMOS Small-Signal Transistor BSS 101 ● VDS 240 V ● ID 0.13 A ● RDS on 16 Ω ● VGS(th) 0.8 … 2.0 V ● N channel ● Enhancement mode ● Logic level 2 3 1 1 Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 101 Q62702-S484 bulk

KTA1571S

Abstract: ib135
Contextual Info: SEMICONDUCTOR KTA1571S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE sat . 2 UNIT Collector-Base Voltage VCBO -120 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -1 Pulse *

KTA1572

Contextual Info: SEMICONDUCTOR KTA1572 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE sat . High Collector Current Capability : IC and ICP. B D A Higher Efficiency Leading to Less Heat Generation. MAXIMUM RATING (Ta=25 SYMBOL

d965 TRANSISTOR

Abstract: 2SD965
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x x NPN Silicon Plastic-Encapsulate Transistor Capable of 0.75Watts of Power Dissipation.

Contextual Info: SEMICONDUCTOR KTA1572 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE sat . High Collector Current Capability : IC and ICP. B D A Higher Efficiency Leading to Less Heat Generation. MAXIMUM RATING (Ta=25 SYMBOL

Contextual Info: SEMICONDUCTOR KTC3572 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE sat . High Collector Current Capability : IC and ICP. B D A Higher Efficiency Leading to Less Heat Generation. MAXIMUM RATING (Ta=25 SYMBOL

KTC3571S

Contextual Info: SEMICONDUCTOR KTC3571S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE ・Low Collector-Emitter Saturation Voltage VCE sat . ・Higher Efficiency Leading to Less Heat Generation. 120 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5

KTC3572

Contextual Info: SEMICONDUCTOR KTC3572 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE sat . High Collector Current Capability : IC and ICP. B D A Higher Efficiency Leading to Less Heat Generation. MAXIMUM RATING (Ta=25 SYMBOL

BSD235C

Abstract: L6327 BSD235 F-053
Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features • Complementary P + N channel P N -20 20 V V GS=±4.5 V 1200 350 mΩ V GS=±2.5 V 2100 600 -0.53 0.95 V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

Contextual Info: BSD235C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 2100 600 mΩ V GS=±2.5 V 1200 350 -0.53 0.95 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)

MOSFET 11N80c3

Abstract: 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22
Contextual Info: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications

04N80C3

Abstract: 04N80C3* TO220 JESD22 PG-TO220-3 SPA04N80C3
Contextual Info: SPA04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications

06N80

Contextual Info: SPA06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications

MOSFET 11N80c3

Abstract: 11N80
Contextual Info: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications

08N80C3

Abstract: 08n80c 08N80 equivalent 08N80C3 SPA08N80C3 JESD22 PG-TO220-3 Page-10 C40W
Contextual Info: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications

SPA04N80C3

Contextual Info: SPA04N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 1.3 Ω Q g,typ 23 nC • High peak current capability • Qualified according to JEDEC1) for target applications

08N80C3

Abstract: equivalent 08N80C3 SPA08N80C3 SPA08N80C3 EQUIVALENT JESD22 d51a C40W
Contextual Info: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications