BR 101 Transistor
Abstract: AV733
Contextual Info: @vic AV733 TO-92 Plastic-Encapsulate Transistors AV733 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM : -0.1 A Collector-base voltage V BR CBO : -60 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV733
AV733
O--92
BR 101 Transistor
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AV8050
Abstract: 1.5A NPN power transistor TO-92
Contextual Info: @vic AV8050 TO-92 Plastic-Encapsulate Transistors AV8050 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV8050
AV8050
O--92
1.5A NPN power transistor TO-92
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102 TRANSISTOR
Abstract: ft 103 AV8550
Contextual Info: @vic AV8550 TO-92 Plastic-Encapsulate Transistors AV8550 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : -1.5 A Collector-base voltage V BR CBO : -40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV8550
AV8550
O--92
102 TRANSISTOR
ft 103
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ft 103
Abstract: AV882 103 IC
Contextual Info: @vic AV882 TO-126 Plastic-Encapsulate Transistors AV882 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 3 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV882
O-126
AV882
O-126
ft 103
103 IC
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AV772
Abstract: ft 103 Avic Electronics
Contextual Info: @vic AV772 TO-126 Plastic-Encapsulate Transistors AV772 TRANSISTOR（ PNP ） FEATURES Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : -3 A Collector-base voltage V BR CBO : - 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃
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AV772
O-126
AV772
O-126
-100A
ft 103
Avic Electronics
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d965 TRANSISTOR
Abstract: 2SD965
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • x x NPN Silicon Plastic-Encapsulate Transistor Capable of 0.75Watts of Power Dissipation.
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2SD965
75Watts
-55OC
150OC
10uAdc,
30Vdc,
d965 TRANSISTOR
2SD965
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Marking 3ds sot
Abstract: transistor 5B1 BR 101 Transistor
Contextual Info: SIEMENS BC856S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low colfector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Fi FI FI U
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OCR Scan
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BC856S
Q62702-C2532
OT-363
EHP00382
Marking 3ds sot
transistor 5B1
BR 101 Transistor
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TO-92 SS
Abstract: Q62702-S493 Q62702-S636
Contextual Info: BSS 101 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 101 240 V 0.13 A 16 Ω TO-92 SS 101 Type BSS 101 BSS 101 Ordering Code Q62702-S493
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Q62702-S493
Q62702-S636
E6288
E6325
TO-92 SS
Q62702-S493
Q62702-S636
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ct60am
Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V
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CT60AM-18B
20MAX.
ct60am
resonant inverter
CT60AM-18B
MITSUBISHI Microwave Transistors
IGBT 900v 60a
8600V
TRANSISTOR ct60am
microwave inverter ic
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6R199P
Abstract: 6R199 DF 331 TRANSISTOR PG-TO220-3-31 IPA60R199CP 6R19 JESD22 SP000094146 IPA60R199C
Contextual Info: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA60R199CP
PG-TO220-3-31
SP000094146
6R199P
6R199P
6R199
DF 331 TRANSISTOR
PG-TO220-3-31
IPA60R199CP
6R19
JESD22
SP000094146
IPA60R199C
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BSL316C
Abstract: HLG09283 L6327
Contextual Info: BSL316C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features • Complementary P + N channel P N -30 30 V V GS=±10 V 150 160 mΩ V GS=±4.5 V 270 280 -1.5 1.4 V DS · Enhancement mode R DS on ,max · Logic level (4.5V rated) · Avalanche rated
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BSL316C
L6327:
BSL316C
HLG09283
L6327
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20n60cfd
Abstract: D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207
Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge
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SPA20N60CFD
PG-TO220-3-31
SP000216361
20N60CFD
20n60cfd
D8172
JESD22
PG-TO220-3-31
SP000216361
SPA20N60CFD
transistor D207
D207
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d207
Abstract: 20N60CFD DF 331 TRANSISTOR JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD d207 infineon
Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge
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SPA20N60CFD
PG-TO220-3-31
SP000216361
20N60CFD
d207
20N60CFD
DF 331 TRANSISTOR
JESD22
PG-TO220-3-31
SP000216361
SPA20N60CFD
d207 infineon
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6R199P
Abstract: 6R199 6R199P mosfet 6R199P DATA SHEET IPA60R199CP JESD22
Contextual Info: IPA60R199CP CoolMOS Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max@T j= 25°C • Ultra low gate charge V Q g,typ 32 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA60R199CP
PG-TO220
6R199P
6R199P
6R199
6R199P mosfet
6R199P DATA SHEET
IPA60R199CP
JESD22
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07N60CFD
Abstract: JESD22 SPW07N60CFD
Contextual Info: SPW07N60CFD CoolMOSTM Power Transistor Product Summary Features • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge V DS @Tjmax 650 V R DS on ,max 0.7 Ω ID 6.6 A • Ultra low gate charge • Extreme dv /dt rated PG-TO247 • High peak current capability
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SPW07N60CFD
PG-TO247
07N60CFD
07N60CFD
JESD22
SPW07N60CFD
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15p10p
Abstract: PG-TO252-3 Tj-102
Contextual Info: SPD15P10P G SIPMOS Small-Signal-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS on ,max 0.24 Ω ID -15 A • Normal level • Avalanche rated PG-TO252-3 • Pb-free lead plating; RoHS compliant Type Package Marking
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SPD15P10P
PG-TO252-3
SPP15P10P
PG-TO220-3
15P10P
15P10P
PG-TO-252-3
PG-TO252-3
Tj-102
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6r385P
Abstract: 6r385 6r385p infineon IPP60R385CP IPP60R385 transistor 6R385P JESD22 SP000082281 transistor f52 to220
Contextual Info: IPP60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPP60R385CP
PG-TO220
SP000082281
6R385P
6r385P
6r385
6r385p infineon
IPP60R385CP
IPP60R385
transistor 6R385P
JESD22
SP000082281
transistor f52 to220
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S1350
Abstract: C67078-S1350-A2
Contextual Info: BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code
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O-220
C67078-S1350-A2
S1350
C67078-S1350-A2
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6r385P
Abstract: 6r385p infineon CoolMOS IPI60R385CP JESD22 SP000103250 transistor 6R385P
Contextual Info: IPI60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPI60R385CP
PG-TO262
SP000103250
6R385P
6r385P
6r385p infineon
CoolMOS
IPI60R385CP
JESD22
SP000103250
transistor 6R385P
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6r299p
Abstract: 6r299 IPA60R299CP PG-TO220-3-31 JESD22 SP000096438 6R29
Contextual Info: IPA60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge Q g,typ V 6.6 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA60R299CP
PG-TO220-3-31
SP000096438
6R299P
6r299p
6r299
IPA60R299CP
PG-TO220-3-31
JESD22
SP000096438
6R29
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11n60cfd
Abstract: 11N60 11N60C JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D11A D8172
Contextual Info: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge
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SPA11N60CFD
PG-TO220-3-31
O-220-3-31
SP000216317
11N60CFD
11n60cfd
11N60
11N60C
JESD22
PG-TO220-3-31
SP000216317
SPA11N60CFD
D11A
D8172
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6r165p
Abstract: Infineon 6R165P PG-TO220-3-31 DF 331 TRANSISTOR IPA60R165CP PG-TO-220-3-31 SP000096437 JESD22 transistor marking code AR3 6R165
Contextual Info: IPA60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPA60R165CP
PG-TO220-3-31
SP000096437
6R165P
6r165p
Infineon 6R165P
PG-TO220-3-31
DF 331 TRANSISTOR
IPA60R165CP
PG-TO-220-3-31
SP000096437
JESD22
transistor marking code AR3
6R165
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6R299P
Abstract: IPI60R299CP JESD22 SP000103249 6r299
Contextual Info: IPI60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPI60R299CP
PG-TO262
SP000103249
6R299P
6R299P
IPI60R299CP
JESD22
SP000103249
6r299
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6r385P
Abstract: IPD60R385CP 6R38 6r385 6r385p infineon JESD22 SP000062533 INFINEON transistor marking
Contextual Info: IPD60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO252 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications
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IPD60R385CP
PG-TO252
SP000062533
6R385P
6r385P
IPD60R385CP
6R38
6r385
6r385p infineon
JESD22
SP000062533
INFINEON transistor marking
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