BR 101 TRANSISTOR Search Results

AV8050

Abstract: 1.5A NPN power transistor TO-92
Contextual Info: @vic AV8050 TO-92 Plastic-Encapsulate Transistors AV8050 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃

d965 TRANSISTOR

Abstract: 2SD965
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • x x NPN Silicon Plastic-Encapsulate Transistor Capable of 0.75Watts of Power Dissipation.

TO-92 SS

Abstract: Q62702-S493 Q62702-S636
Contextual Info: BSS 101 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 101 240 V 0.13 A 16 Ω TO-92 SS 101 Type BSS 101 BSS 101 Ordering Code Q62702-S493

ct60am

Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V

6R199P

Abstract: 6R199 DF 331 TRANSISTOR PG-TO220-3-31 IPA60R199CP 6R19 JESD22 SP000094146 IPA60R199C
Contextual Info: IPA60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

20n60cfd

Abstract: D8172 JESD22 PG-TO220-3-31 SP000216361 SPA20N60CFD transistor D207 D207
Contextual Info: SPA20N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.22 Ω I D1) 20.7 A • Extremely low reverse recovery charge • Ultra low gate charge

6r385P

Abstract: 6r385 6r385p infineon IPP60R385CP IPP60R385 transistor 6R385P JESD22 SP000082281 transistor f52 to220
Contextual Info: IPP60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

S1350

Abstract: C67078-S1350-A2
Contextual Info: BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

6r385P

Abstract: 6r385p infineon CoolMOS IPI60R385CP JESD22 SP000103250 transistor 6R385P
Contextual Info: IPI60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

11n60cfd

Abstract: 11N60 11N60C JESD22 PG-TO220-3-31 SP000216317 SPA11N60CFD D11A D8172
Contextual Info: SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode V DS 600 V R DS on ,max 0.44 Ω 11 A I D1) • Extremely low reverse recovery charge • Ultra low gate charge

6r165p

Abstract: Infineon 6R165P PG-TO220-3-31 DF 331 TRANSISTOR IPA60R165CP PG-TO-220-3-31 SP000096437 JESD22 transistor marking code AR3 6R165
Contextual Info: IPA60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R299P

Abstract: IPI60R299CP JESD22 SP000103249 6r299
Contextual Info: IPI60R299CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.299 Ω R DS on ,max • Ultra low gate charge V Q g,typ 22 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6r385P

Abstract: IPD60R385CP 6R38 6r385 6r385p infineon JESD22 SP000062533 INFINEON transistor marking
Contextual Info: IPD60R385CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO252 650 0.385 Ω R DS on ,max • Ultra low gate charge V Q g,typ 17 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6r125p

Abstract: transistor 6R125P IPW60R125CP JESD22 SP000088489 CA82 6R125
Contextual Info: IPW60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R099

Abstract: IPW60R099CP 6R099 IPW60R099CP JESD22 SP000067147 6r099 mosfet marking code D18
Contextual Info: IPW60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ON x Qg R DS on ,max • Extreme dv/dt rated Q g,typ 650 V 0.099 Ω 60 nC • High peak current capability • Qualified according to JEDEC1) for target applications

6R199P

Abstract: 6R199P mosfet 6R199 6R199P DATA SHEET mosfet 6R199 IPW60R199CP SP000089802 IPW60R199 JESD22
Contextual Info: IPW60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6r165p

Abstract: Infineon 6R165P IPP60R165 IPP60R165CP JESD22 SP000084279 Energy Technologies 6r165
Contextual Info: IPP60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R165P

Abstract: 6R165 IPP60R165CP smd transistor marking F12 IPB60R165CP JESD22 SP000096439 SMD TRANSISTOR MARKING code DD Infineon 6R165P IPP60R165
Contextual Info: IPB60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS on ,max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

Contextual Info: BSS214NW OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=4.5 V 140 mΩ V GS=2.5 V 250 V DS • N-channel R DS on ,max • Enhancement mode • Super Logic level (2.5V rated) 1.5 ID A • Avalanche rated • Qualified according to AEC Q101

D-14A

Contextual Info: BSD316SN OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 160 mΩ V GS=4.5 V 280 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 1.4 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT363

6R199P

Abstract: 6R199 mosfet 6R199 6R199P DATA SHEET IPI60R199CP ISS 99 diode JESD22 SP000103248
Contextual Info: IPI60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R199P

Abstract: 6R199 6R199P DATA SHEET IPB60R199 mosfet 6R199 smd marking code cp IPB60R199CP SMD MARKING CODE 102 JESD22 SP000223256
Contextual Info: IPB60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

6R199P

Abstract: IPP60R199CP 6R199 6R199P mosfet 6R199P TO220 6R199P DATA SHEET IPP60R199 mosfet 6R199 JESD22 SP000084278
Contextual Info: IPP60R199CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.199 Ω R DS on ,max • Ultra low gate charge V Q g,typ 33 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

230N06L

Abstract: 230n06
Contextual Info: IPD230N06L G OptiMOS Power-Transistor Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 23 mΩ ID 30 A • 175 °C operating temperature • Pb-free lead plating, RoHS compliant