BPY64P Search Results

LP250

Contextual Info: BPY64P SIEMENS Silicon Photovoltaic Cell FEATURES • For applications from 420 nm to 1060 nm HA/lx 850 nm Sensitivity, Spectral Range X 420 tOl060 S - 10% of SmaX Radiant Sensitive Area A 0.36 ? c rrr Radiant Sensitive Area Dimensions LxW 5.98x5.98 mm Half Angle

BPY64

Abstract: Q60215-Y67
Contextual Info: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell BPY 64 P Anode red * Max. solder areas on front and back side gsoo 6636 Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherw ise specified. Wesentliche Merkmale

tic 1060

Contextual Info: SIEMENS Silizium-Fotoelement Silicon Photovoltaic Cell D io d e and s o ld e r pods A c tiv e a re a BPY 64 P la c q u e re d Cvl I t J 66-4 u .2 S tr a n d s ^ 0^0 tO llT i ö lö s o ld e re d I 2 . 5 '1 J—1 '• — ■• •• 0 0 .5 5 / 00.5 3 .0

VARTA 20DK

Abstract: BPX81 circuit infrared phototransistor for tv BPY62 VARTA 60 dk 20DK BPY62 application VARTA 3.6 v 70 ma Phototransistors Sunny Oscillators
Contextual Info: General Photoelectric Applications Circuits Appnote 36 1. Suppression of DC Component in Photocurrent of Phototransistors Due to the by-passing of the base-emitter junction of T2 by capacitor C1, this control mechanism is ineffective during rapid changes. The cut-off frequency above, at which the control

lg 6154

Abstract: KTY 10-8 DL1416 KTY 20-5 DL440 O62902-B156-F222 Q62901-B64
Contextual Info: Alphanumerische Bestellnummern Q-Nummern Alphanumeric Ordering Codes (Q numbers) Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer lyp

SFH 255 FA

Abstract: LR 2703 LY3360K dl340m FP310L100-75 Q68000-A8452
Contextual Info: AlphanumerischesTypenverzeichnis Alphanumeric Type Index Achtung: NeueTypenbezeichnungen bei Si-Fotodetektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems type Bestellnummer Seite Type Bestellnummer Seite

Contextual Info: Si-Fotodetektoren 8.2 Silicon Photodetectors Zwei- und Vierfach-Fotodioderi Package <t> Type 8.2 Radiant sensitive *ab4 /95 area SFH 234S ±55 2m al/times 2 4 (^ 1 5 ) ±60 0 5 Q62702-P270 35 0 1( s t ) 3 5 0 . 1050 1 Q62702-P211 36 4m al/times 1X1 0.2 (=S 1)

BPX48

Abstract: SFH291 SFH100 fh205 BPW-21 SFH 314 fotodioden SFH317 bpx90 SFH2030
Contextual Info: Si-Fotodetektoren Silicon Photodetectors Typenübersicht Summary of Types 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors S ' y •- S BP 103 SFH 302 S F H 50 6 BPX81 BPX 83 SFH 305 V BP X 90/F BPX 38 BP 103 B/BF SFH 313/FA

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN

TAA761A

Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
Contextual Info: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,