BPY62
Contextual Info: BPY62 Silicon NPN Phototransistor Characteristics TA=25°C, X=950 nm Parameter APPLICATIO NS • Photointerrupters • Industrial electronics • For control and drive circuits DESCRIPTIO N Unit ^Smax 850 nm Spectral Sensitivity Range X 420 to 1130 Radiant Sensitive Area
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Phototransistor TIL81
Abstract: TIL81 Transistor BPX25 til100 Phototransistor bpx25 phototransistor Infrared phototransistor TO18 Phototransistor zm110 phototransistor and applications MRD300
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIONS OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash C ontrol, etc. ZM100 SERIES TO-18 HERMETIC ZM100/110, BPX25/29
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zm100zm100/110bpx25/29zm110+12bpx25zm210phototransistor til81til81transistor bpx25til100phototransistor bpx25phototransistorinfrared phototransistor to18phototransistor zm110phototransistor and applicationsmrd300
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BPX48
Abstract: SFH291 SFH100 fh205 BPW-21 SFH 314 fotodioden SFH317 bpx90 SFH2030
Contextual Info: Si-Fotodetektoren Silicon Photodetectors Typenübersicht Summary of Types 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors S ' y •- S BP 103 SFH 302 S F H 50 6 BPX81 BPX 83 SFH 305 V BP X 90/F BPX 38 BP 103 B/BF SFH 313/FA
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313/fa314/fabpy62bpx81+16310/fa303/f317/f213/fa214/fabpx48/fbpx48sfh291sfh100fh205bpw-21sfh 314fotodiodensfh317bpx90sfh2030
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TIL81
Abstract: Phototransistor TIL81 Phototransistor TIL100 lens photodiode phototransistor Phototransistor bpx25 Phototransistor zm110 Infrared phototransistor TO18 BPW41D ferranti
Contextual Info: SILICON PLANAR PHOTOTRANSISTORS GENERAL APPLICATIO N S OF FERRANTI PHOTOTRANSISTORS Alarm Systems, Process Control, Edge and Position Sensing, Optical Character Recognition, Tape Readers, Card Readers, Electronic Flash Control, etc. ZM100 SER IES TO-18 HERM ETIC ZM100/110, BPX25/29
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zm100zm100/110bpx25/29zm110+13bpx25mrd310mrd370til81phototransistor til81phototransistortil100lens photodiode phototransistorphototransistor bpx25phototransistor zm110infrared phototransistor to18bpw41dferranti
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IR TIL81
Abstract: TIL81 Phototransistor TIL81 2 pin phototransistor diode TIL81 TIL100 PHOTOTRANSISTOR 3 PIN bpx25 phototransistor application circuit Phototransistor bpx25 phototransistor
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR The B P W 4 1 D is a large: area, silicon p.i.n. photodiode having a low junction capacitance and consequently capable of fast response times. The active chip is packaged in a plastic moulding which contains a near infra-red transmissive filter such that the device is sensitive to infra-red radiation only, and
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bpw41dfpt220fpt230fpt320+15fpt330fpt400fpt500fpt530fpt560ir til81til81phototransistor til812 pin phototransistordiode til81til100phototransistor 3 pinbpx25 phototransistor application circuitphototransistor bpx25phototransistor
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VARTA 20DK
Abstract: BPX81 circuit infrared phototransistor for tv BPY62 VARTA 60 dk 20DK BPY62 application VARTA 3.6 v 70 ma Phototransistors Sunny Oscillators
Contextual Info: General Photoelectric Applications Circuits Appnote 36 1. Suppression of DC Component in Photocurrent of Phototransistors Due to the by-passing of the base-emitter junction of T2 by capacitor C1, this control mechanism is ineffective during rapid changes. The cut-off frequency above, at which the control
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varta 20dkbpx81circuit infrared phototransistor for tvbpy62+6varta 60 dk20dkbpy62 applicationvarta 3.6 v 70 maphototransistorssunny oscillators
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BPY62
Abstract: Siemens photodiode SIEMENS Phototransistors BPY
Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor Chip position 2.7 BPY 62 Radiant sensitive area \ 00.45 .1I v _ . . 12.5 5.1 4.8 _—6.2 k 5.4 Approx. weight 1.0 g M aße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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TIL702
Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Contextual Info: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or
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lcc4230-depn4050til702til701+8til393-9til78 phototransistortil81til312 7 segment displaytil78til393til313til393-6
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