BLF24 Search Results

771-BLF245B

Abstract: transistor j127
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D096 BLF245B VHF push-pull power MOS transistor Product specification Supersedes data of 2000 Oct 17 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF245B PIN CONFIGURATION

BLF246B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 2001 Oct 10 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

atc 17-33

Abstract: class A push pull power amplifier class B push pull power amplifier philips catalog resistors RGS 13/1 U1 78L05 vhf linear amplifier BLF248 c4l7 SOT262
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF248 VHF push-pull power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF248 PIN CONFIGURATION

BLF246B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 2000 Feb 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES

GS 78L05 N

Contextual Info: Philips Semiconductors b b S 3 T 31 7 ? a • Ap X ^P ro d u ctsp ecificat^ VHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE BLF248 bR E D PIN CONFIGURATION FEATURES • High power gain • Easy power control 1 • Good thermal stability /~i • Gold metallization ensures

Contextual Info: Product specification Philips S em iconductors HF/VHF power MOS transistor FEATURES BLF241I-: PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement

Contextual Info: OOETTBfci MED M l A P X Philips Semiconductors Product specification HF/VHF power MOS transistor BLF242 1 N AMER PHIL IPS/DISCRETE h^E D PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability • Withstands full load mismatch

MRF255 equivalent

Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
Contextual Info: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341

TRANSISTOR CATALOGUE

Abstract: 78L05 voltage regulator tag l9 225 400 BLF248 RESISTOR BJE 250 78l05 sot 78L05
Contextual Info: ^ 53=131 Philips Sem iconductors □ D 2 em û 77Ö •■ A P X^^^Productsp«cification VHF push-pull power MOS transistor m m m BLF248 ■ N AUER PHILIPS/DISCRETE f iE ]> PIN CONFIGURATION FEA TU RES • High power gain • E a sy power control • Good thermal stability

Philips 809 08003

Abstract: SOT123 Package BLF242 100b choke
Contextual Info: Philips Semiconductors tità B IB l OOETÌBLi MED M i A P X Product specification HF/VHF power MOS transistor BLF242 N AUER PHILIPS/DISCRETE h^E » PIN CONFIGURATION FEATURES • High power gain • Low noise • Easy power control • Good thermal stability

Contextual Info: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 2 — 20 September 2012 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.

BLF242

Contextual Info: BLF242 HF-VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The ASI BLF242 is intended for use in 28 VDC large signal Applications. PACKAGE STYLE .380 4L FLG B FEATURES INCLUDE: .112 x 45° A S • PG = 16 dB Typical at 175 MHz • Omnigold Metalization System

l17c

Abstract: 727 Transistor power values BLF246B
Contextual Info: DISCRETE SEMICONDUCTORS 0 Â T Â Sin] H T BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 Philips Semiconductors 2000 Feb 04 PHILIPS Philips Semiconductors Product specification VHF push-pull power MOS transistor

tp2304

Abstract: TPV3100 TP9383 TP2330 MRF2001 PT9783 PT9780 tp8828f BLY93A mrf 406 application circuit
Contextual Info: ASI Part Number AM1214-100 AM1214-200 AM1214-325 AM80912005 AM80912015 AM80912030 AM80912085 AM80912150 AM81214006 AM81214015 AM81214030 AM81214060 BLF147 BLF175 BLF177 BLF242 BLF244 BLF245 BLF246 BLF278 BLF368 BLU11/SL BLU15/12 BLU20/12 BLU30/12 BLU45/12

Contextual Info: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 1 — 30 January 2012 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 3 — 26 February 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 1 — 7 February 2012 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of October 1992 1999 Jan 28 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES

Contextual Info: BLF245 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)6.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)68# Minimum Operating Temp (øC)

Contextual Info: BLF245C Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)4.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)85# Minimum Operating Temp (øC)

wirelesscommunication

Abstract: MGP175 philips catalog resistors Q 371 Transistor RF Transistor s-parameter vhf BLF245 iec 947 156-1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D065 BLF245 VHF power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF power MOS transistor FEATURES BLF245 PIN CONFIGURATION • High power gain

BLF246B

Abstract: transistor 2001 H1
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 2000 Feb 04 2001 Oct 10 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES