BLF241E Search Results

Contextual Info: Philips Semiconductors bbS3^31 HF/VHF power MOS transistor — ^ — — FEATURES QDBTTS? H lfl APX Product specification BLF241E N AUER PHILIPS/DISCRETE b^E D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

philips resistor 2322

Abstract: 2322 151 BLF241E 2322 151 PHILIPS Philips 2222 114 capacitor ETD 41 035 itt 2222 hf transistor 12W 02 transistor philips potentiometer 2322
Contextual Info: Philips S em iconductors B l b b 5 3 T 31 0 0 2^^27 4 1 fl APX P roduct specification HF/VHF power MOS transistor — ^ — FEATURES BLF241E N AMER PHILIPS/DISCRETE b*lE D PIN CONFIGURATION • High power gain • Easy power control • Gold metallization

BLF241

Abstract: BLF241E 2322 653 71005 International Power Sources transistor-BLF241E
Contextual Info: Philips Semiconductor» HF/VHF power MOS transistor PHILIPS INTERNATIONAL 5 faE ì> M 3*1"0 7 BLF241E 711DflSb 0DM377S 4bb H P H I N PIN CONFIGURATION FEATURES • • • • • J- High power gain Easy power control Gold metallization Good thermal stability

Contextual Info: Product specification Philips S em iconductors HF/VHF power MOS transistor FEATURES BLF241I-: PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement

Contextual Info: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121