BLA1011 Search Results
BLA1011 Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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BLA1011 Datasheets (23)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BLA1011-10 | NXP Semiconductors | Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 1 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 10 W; Operating voltage: 36 VDC; Power gain: 18 dB; Pulse width: 50 us | Original | 69.82KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-10 | Philips Semiconductors | Avionics LDMOS Transistor | Original | 68.71KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-10,112 | NXP Semiconductors | Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 1 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 10 W; Operating voltage: 36 VDC; Power gain: 18 dB; Pulse width: 50 us; Package: SOT467C (LDMOST); Container: Blister pack | Original | 69.82KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-2 | NXP Semiconductors | BLA1011-2 - TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-3, FET RF Power | Original | 593.77KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-2 | NXP Semiconductors | Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 1 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 2 W; Operating voltage: 36 VDC; Power gain: 18 dB; Pulse width: 50 us | Original | 70.62KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-2 | Philips Semiconductors | Avionics LDMOS Transistor | Original | 69.55KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-2,112 | Ampleon USA | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 75V 16DB SOT538A | Original | 1.19MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-200 | NXP Semiconductors | Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 2 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 200 W; Operating voltage: 36 VDC; Power gain: 15 dB; Pulse width: 50 us | Original | 68.17KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-200 | Philips Semiconductors | Avionics LDMOS transistor | Original | 104.16KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-200 | Philips Semiconductors | Avionics LDMOS Transistor | Original | 72.07KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-200 | Philips Semiconductors | Avionics LDMOS transistor | Original | 81.62KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-200,112 | NXP Semiconductors | Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 2 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 200 W; Operating voltage: 36 VDC; Power gain: 15 dB; Pulse width: 50 us; Package: SOT502A (LDMOST); Container: Blister pack | Original | 68.17KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-200R | NXP Semiconductors | Avionics LDMOS transistors | Original | 109.18KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-200R,112 | NXP Semiconductors | BLA1011-200R - Avionics LDMOS transistor, SOT502A Package, Standard Marking, ICS Tube - DSC Bulk Pack | Original | 109.19KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-2,112 | NXP Semiconductors | BLA1011-2 - TRANSISTOR L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-3, FET RF Power | Original | 593.77KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-2,112 | NXP Semiconductors | Avionics LDMOS transistor - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 1 %; Efficiency: 50 %; Frequency: 1030 - 1090 MHz; Load power: 2 W; Operating voltage: 36 VDC; Power gain: 18 dB; Pulse width: 50 us; Package: SOT538A (CDIP2); Container: Blister pack | Original | 70.62KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-300 | NXP Semiconductors | Avionics LDMOS transistors - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 2 %; Efficiency: 57 %; Frequency band: 1030-1090 GHz; Operating voltage: 32 VDC; Output power: 300 W; Package material: SOT957A ; Power gain: 16.5 dB | Original | 58.77KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-300 | Philips Semiconductors | Avionics LDMOS transistors | Original | 48.34KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011-300,112 | NXP Semiconductors | Avionics LDMOS transistors - Application: Avionics - TCAS, IFF, Mod-S ; Description: Avionics LDMOS RF POWER Transistor ; Duty cycle: 2 %; Efficiency: 57 %; Frequency band: 1030-1090 GHz; Operating voltage: 32 VDC; Output power: 300 W; Package material: SOT957A ; Power gain: 16.5 dB; Package: SOT957A (LDMOST); Container: Bulk Pack | Original | 58.77KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BLA1011S-200 | Philips Semiconductors | Transistor Mosfet N-CH 75V 3SOT-502A BULK | Original | 68.19KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BLA1011 Price and Stock
NXP Semiconductors BLA1011S-200,112Trans RF MOSFET N-CH 75V 3-Pin SOT-502B Bulk |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLA1011S-200,112 | 40 | 1 |
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| BLA1011S-200,112 | 8 | 1 |
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BLA1011S-200,112 | 48 | 1 |
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BLA1011S-200,112 | 13,017 |
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NXP Semiconductors BLA1011S-200R,112Trans RF MOSFET N-CH 75V 3-Pin SOT-502B Bulk |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLA1011S-200R,112 | 20 | 1 |
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BLA1011S-200R,112 | 20 | 1 |
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BLA1011S-200R,112 | 8,067 |
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Ampleon BLA1011-2,112- Rail/Tube (Alt: BLA1011-2,112) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLA1011-2,112 | Tube | 12 Weeks |
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NXP Semiconductors BLA1011-300Trans RF MOSFET N-CH 65V 15A 3-Pin LDMOST |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLA1011-300 | 6 | 1 |
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BLA1011-300 | 44 |
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| BLA1011-300 | 4 |
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BLA1011-300 | 4,862 |
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NXP Semiconductors BLA1011-2L BAND, SI, N-CHANNEL, RF POWER, MOSFET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLA1011-2 | 14 |
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BLA1011 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BLA1011-10
Abstract: 200B
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m3d381bla1011-10ot467csca75+2 | |
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Contextual Info: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1: |
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bla1011-200bla1011s-200 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Nov 21 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain |
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m3d379bla1011-200ot502a | |
multilayer ceramic capacitor philips
Abstract: BLA1011-200
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m3d379bla1011-200ot502a613524/05/pp12+1 | |
S 1040 smd
Abstract: multilayer ceramic capacitor philips 200B BLA1011-2 MGU487
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m3d438bla1011-2ot538asca73+5 | |
200B
Abstract: BLA1011-10
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m3d381bla1011-10ot467csca74+2 | |
SMD0508
Abstract: BLA1011-200
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m3d379bla1011-200ot502asca75+2 | |
BLA1011-300Contextual Info: BLA1011-300 Avionics LDMOS transistors Rev. 02 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance |
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bla1011-300 | |
SMD 0508
Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
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bla1011-200bla1011s-200smd 0508250 b 340 smd transistor+3 | |
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Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 PINNING - SOT467C FEATURES • High power gain |
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m3d381bla1011-10ot467csca75+1 | |
09803
Abstract: 200B BLA1011-10
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m3d381bla1011-10ot467csca74+3 | |
BLA1011-300
Abstract: LDMOS radar BLA0912-250 BLA1011-10 BLA1011-2 BLA1011-200 BLL1214-250 BLL1214-35 BLS6G3135-120
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bla1011-300ot957abla0912-250ot502a+11 | |
transistor SMD Z2
Abstract: 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1
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m3d438bla1011-2ot538asca75+7 | |
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Contextual Info: BLA1011-200R; BLA1011S-200R Avionics LDMOS transistors Rev. 01 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1. |
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bla1011-200rbla1011s-200r1011s-200r | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Product specification Supersedes data of 2001 Mar 02 2001 Apr 17 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-200 FEATURES PINNING - SOT502A |
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m3d379bla1011-200ot502a613524/04/pp12 | |
MGU487
Abstract: 200B BLA1011-2 NV SMD TRANSISTOR
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m3d438bla1011-2ot538asca74+4 | |
BLA1011-300
Abstract: sot957 SOT-95
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bla1011-300sot957sot-95 | |
BLA1011-200
Abstract: BP317
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m3d379bla1011-200ot502af4825+1 | |
BLA1011-200
Abstract: BP317
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m3d379bla1011-200ot502af4825+1 | |
200B
Abstract: BLA1011-2 MGU487 gp 516
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m3d438bla1011-2ot538asca74+4 | |
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Contextual Info: BLA1011-2 Avionics LDMOS transistor Rev. 6 — 6 May 2013 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead flangeless package SOT538A with a ceramic cap. The common source is connected to |
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bla1011-2ot538a | |
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Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D438 BLA1011-2 Avionics LDMOS transistor Preliminary specification 2001 June 07 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-2 PINNING - SOT538A FEATURES • High power gain |
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m3d438bla1011-2ot538a | |
BLA1011-200
Abstract: SMD0508
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m3d379bla1011-200ot502asca74+2 | |
enamelled copper wire tables
Abstract: SMD 0508 SMD0508
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bla1011-200rbla1011s-200r1011s-200renamelled copper wire tables+2 | |