BL 7B Search Results

Contextual Info: in ttil « « « « « * 28F400BX-TL/BL, 28F004BX-TL/BL 4-MBIT 256K x 16, 512K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — Vcc = 3.3V ±0.3V ■ x8/x16 Input/Output Architecture — 28F400BX-TL, 28F400BX-BL

pl3155ac

Abstract: Trompeter 305 TAI-144 TAI-173
Contextual Info: RED NUCATES ORIGINAL CABLES ACCOMDOATEO Ml7/176-00002 TWC-7B-1 TWC-124-1A 10602, RAYCHEM TWAC-78-1F2 702BDO13O, RAYCHEM 83310 BELDEN 202-3927 MICRDODT 202-3942 MICRODOT B451 BELDEN 202-3934 MICROOOT 2524E0114, RAYCHEM TWC-7B-2 TWC-124-2 BL-9B2 TIMES BL— 1242 TIMES

GM71C4100

Abstract: bl70 BLT70 BL-70 gm71c4100bj GM71C4104 bl80
Contextual Info: @ LG Semicon. Co. LTD._ Description Features The GM71C4100B/BL is the new generation dynamic RAM organized 4,194,304 x 1 bit. GM71C4100B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The

Contextual Info: DS1330YL/BL DS1330YL/BL 256K Nonvolatile SRAM with Battery Monitor DALLAS SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1330Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention NC NC A14

GM71C17403b

Abstract: GM71C17403BJ GM71C17403
Contextual Info: @ LG Semicon. Co. LTD. Features Description The GM71C17403B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71C17403B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

GM71V17803BJ6

Abstract: fl37 IRAD GM71V17803BJ7
Contextual Info: @ LG Semicon. Co. LTD. Description Features The GM71V S 17803B/BL is the new generation dynamic RAM organized 2,097,152 words x 8 bit. GM71V(S)17803B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

512X16 sram

Abstract: KM616V4002B KM616V4002
Contextual Info: Prr?]>rrTine:y KM616V4002B/BL, KM616V4002B/BLI CMOS SRAM 256K x 16 Bit High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION - F astA ccessT im e 10,12,15 *(M a x.) - Low Power Dissipation Standby (TTL) : 40* • (Max.) The KM616V4002B/BL is a 4,194,304-bit high-speed Static

Contextual Info: intûl * 28F400BX-TL/BL, 28F004BX-TL/BL 4-MBIT 256K x 16,512K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY • Low Voltage Operation for Very Low Power Portable Applications — VCc = 3.3V ±0.3V ■ Automatic Power Savings Feature — 0.8 mA typical Ice Active Current in

bl 9 a2

Abstract: 18-PIN 20-PIN 26-PIN ZIP20-P-400
Contextual Info: O K I Sem iconductor M SM 511000B /B L _ 1,048,576-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM511000B/BL is a new generation dynamic RAM organized as 1,048,576-word x 1-bit. The technology used to fabricate the MSM511000B/BL is OKI’s CMOS silicon gate process technology.

Contextual Info: HM514102B/BL Series 4,194,304-word x 1-bit Dynamic RAM The Hitachi HM514102B/BL is a CMOS dynamic RAM organized 4,194,3 0 4 -w o rd x 1-bit. H M 514102B /B L has realized higher density, higher perform ance and various functions by employing 0.8 pm CMOS process technology and

"NOR Flash" intel 28f

Abstract: 486TM 80L188EB intel PLD
Contextual Info: INTEL CORP {flEMORY/PLD/ L7E D in t e l • 4fl2bl7b 0001 373 S>40 ■ P O IIilL D B S lO K IM V 28F400BX-TL/BL, 28F004BX-TL/BL 4-MBIT (256K x 1 6 ,512K x 8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY ■ Low Voltage Operation for Very Low Power Portable Applications

Contextual Info: 531,~A >@/96:6.?@=2 >64:.8 =28.C 3HDTURHS \ 9dV ]b^e^\mkb\ lmk^g`ma /[^mp^^g \hbe Zg] \hgmZ\ml0 \ Snk`^ pbmalmZg] ohemZ`^ ni mh <666VBD2 f^^ml GDD PZkm <> Zg] T^e^\hk]bZ \ Mbg4 \k^^iZ`^ bl 84;ff /[^mp^^g \hbe Zg] \hgmZ\m02 Mbg4 \e^ZkZg\^ bl 846ff /[^mp^^g \hbe Zg] \hgmZ\m0

I28F400

Abstract: 80L188EB 82360SL intel PLD D773
Contextual Info: A D V A N C E IN F O R M A T IO N in te i INTEL CORP MEMORY/PLD/ SbE » • 4fl2bl7b Da773Sa TßH ■ I T L E 28F400BX-TL/BL, 28F004BX-TL/BL - T qt (3> 2 6 4MBIT (256K x16, 512K x8 LOW POWER BOOT BLOCK FLASH MEMORY FAMILY I Low Voltage Operation for Very Low

L70b

Contextual Info: O K I Semiconductor MSM514410B/BL_ _ 1,048,576-Word x 4-Bit D YN AM IC RAM : FA S T P A G E M O D E T Y P E WRITE P ER BIT DESCRIPTION The MSM514410B/BL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514410B/BL is OKI's CMOS silicon gate process technology.

HM514402

Abstract: M514402 HM514402bs HM514402BZ
Contextual Info: HM514402B/BL Series 1,048,576-word x 4-bit Dynamic RAM The Hitachi HM 514402B/BL is a CMOS dynamic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w o rd x 4 -b it. H M 5 1 4 4 0 2 B /B L has re a liz e d h ig h e r d en sity , h ig h er p e rfo rm a n c e and v ario u s fu n c tio n s by

Contextual Info: bbSB^Bl Philips Semiconductors QQ5H351 T56 BBAPX Preliminary specification Silicon planar epitaxial high-speed switching diode — BAS216 N AUER PHILIPS/DISCRETE FEATURES b?E D QUICK REFERENCE DATA • SMD envelope SYMBOL • High speed vH continuous reverse

Contextual Info: DS1345YUBL DS1345YL/BL DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Battery Monitor NOT RECOMMENDED FOR NEW DESIGNS. SEE PS1345Y/AB DATA SHEET. PIN ASSIGNMENT FEATURES • Built-in lithium battery provides more than 10 years of data retention NC NC A14

Contextual Info: Philips Semiconductors bbSB^Bl 0031531 "ns HAPX^^duc^peoification PNP 4 G Hz wideband transistor £ BFQ32 N AUER PHILIPS/DISCRETE D ESCRIPTION b'lE PINNING P N P transistor in a plastic SOT37 envelope, intended for use in UHF applications such as broadband

2SJ223

Contextual Info: bl E J> 2 S J 2 2 3 m 44tìb2G5 0D12cìfltì 7b7 « H I T 4 , 2 S J 2 2 3 § — HITACHI/ OPTOELECTRONICS) Silicon P Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current

weidmuller 170125

Abstract: 160505 din 46228 25nm 161871 Weidmuller BLZ 5.00 H07V-K analoge schaltkreise 132166 BL35
Contextual Info: Steckverbindersysteme in metrischer Bauform Systemübersicht • BL 3.5/SL 3.5 Raster 3,5 mm Die Systeme zeichnen sich durch • BLZ 5.00/SL 5.00 (Raster 5,00 mm) • eine platzsparende Bauweise • BLZ 7.50/SL 7.50 (Raster 7,50 mm) • eine konische Drahteinführung

BY448

Abstract: BY440 BY458 Philips diode tFR
Contextual Info: N AMER PHI LIPS/DISCRETE bTE D • bbSB^Bl QG2bM75 TTM BY448 BY458 IAPX PARALLEL EFFICIENCY DIODES Double-diffused passivated rectifier diodes in hermetically sealed axial-leaded glass envelopes, intended fo r use as efficiency diodes in transistorized horizontal deflection circuits and PPS power-pack system

LT 8834

Abstract: LT 7232 TS-3401
Contextual Info: "a l p h a n u m e r i c in d e x L B L -9 3 1 6 G . L BL -9429G 5-11 5-14 L T C - 2 7 2 3 Y . 10-21 L TC -3710G 14-3

RDM15PB5

Abstract: RDM15SA5
Contextual Info: C6 I/O Connectors ñ-bl-IJ D-Subminiature PCB Right Angle Performance Data MATERIALS Insulator Material: Glass Filled Polyester Color Black U.L. Flammability 94V-0 Contact Material: Phosphor Bronze Contact Plating: 15m- " .381 n,m Gold Over Nickel 30 m- " (.762 y,m) Gold Over Nickel

Contextual Info: 0S1350YUBL DS1350YL/BL 4096K Nonvolatile SRAM with Battery Monitor DALLAS SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1350Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • Built-in lithium battery provides more than 10 years of data retention • Data is automatically protected during V c c power