BJT TRANSISTOR Search Results

2N3904

Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

RTU620

Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

2N326

Abstract: 35 A 35 V BJT
Contextual Info: 2N326 Ge NPN Power BJT 9.88 Transistors Transistors Bipolar Ge NP. 1 of 1 Home Part Number: 2N326 Online Store 2N326 Diodes G e NPN Po w er BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits

power BJT

Abstract: bjt specifications IW1810 circuits using BJT Flyback transformer Computer Monitor bjt gate drive circuit JB 71 JESD22-A114 bjt 100 Application Note AC-DC battery charger constant
Contextual Info: iW1810 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT 1.0 Features Intelligent AC-DC and LED Power 2.0 Description ● Primary-side feedback eliminates opto-isolators and simplifies design ● Internal 800-V bipolar junction transistor BJT

2N1100

Contextual Info: 2N1100 Ge PNP Power BJT 8.77 Transistors Transistors Bipolar Ge PNP Power Bipolar . Page 1 of 1 Enter Your Part # Home Part Number: 2N1100 Online Store 2N1100 Diodes Ge PNP Pow er BJT Transistors Enter code INTER3 at Integrated Circuits checkout.* Optoelectronics

bjt specifications

Abstract: power BJT PNP
Contextual Info: 2N865 Si PNP Lo-Pwr BJT 0.11 Transistors Bipolar Silicon PNP Low-Power American . Page 1 of 2 Enter Your Part # Home Part Number: 2N865 Online Store 2N865 Diodes Si PNP Lo -Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

1401

Contextual Info: 2N1395 Ge PNP Lo-Pwr BJT 14.01 Transistors Transistors Bipolar Ge PNP Low-Power . Page 1 of 1 Enter Your Part # Home Part Number: 2N1395 Online Store 2N1395 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N861

Contextual Info: 2N861 Si PNP Lo-Pwr BJT 7.77 Transistors Bipolar Silicon PNP Low-Power American . Page 1 of 2 Enter Your Part # Home Part Number: 2N861 Online Store 2N861 Diodes Si PNP Lo -Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N651

Abstract: 1401
Contextual Info: 2N651 Ge PNP Lo-Pwr BJT 14.01 Transistors Transistors Bipolar Ge PNP Low-Power B. Page 1 of 1 Enter Your Part # Home Part Number: 2N651 Online Store 2N651 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

bjt specifications

Abstract: 2N869A
Contextual Info: 2N869A Si PNP LP HF BJT 3.92 Transistors Bipolar Silicon PNP Low-Power High-Freq. Page 1 of 2 Enter Your Part # Home Part Number: 2N869A Online Store 2N869A Diodes Si PNP LP HF BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

2N1225

Contextual Info: 2N1225 Ge PNP Lo-Pwr BJT 9.38 Transistors Transistors Bipolar Ge PNP Low-Power B. Page 1 of 1 Enter Your Part # Home Part Number: 2N1225 Online Store 2N1225 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: 2N632 Ge PNP Lo-Pwr BJT 24.68 Transistors Transistors Bipolar Ge PNP Low-Power B. Page 1 of 1 Enter Your Part # Home Part Number: 2N632 Online Store 2N632 Diodes Ge PNP Lo-Pwr BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics

Contextual Info: iW1816 Off-Line Digital Green-Mode PWM Controller Integrated with Power BJT and OTP 1.0 Features 2.0 Description ●● Primary-side feedback eliminates opto-isolators and simplifies design ●● Internal 800-V bipolar junction transistor BJT ●● Adaptively controlled soft start-up enables fast and

bjt specifications

Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor
Contextual Info: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT

Contextual Info: A Product Line of Diodes Incorporated Green FZT751Q 60V PNP HIGH PERFORMANCE TRANSISTOR IN SOT223 Description Applications This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features

Contextual Info: C2173 Datasheet Primary Side Sensing SMPS Controller KEY FEATURES AND ADVANTAGES • Advanced primary sensing control circuitry achieves accurate voltage and current CV and CC regulation • Bipolar junction transistor (BJT) primary switch enables ultra low BOM cost

Half BRIDGE driver for bjt

Contextual Info: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■

9435R

Abstract: NSB9435T1 NSB9435T1G power BJT PNP
Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com • Collector −Emitter Sustaining Voltage − POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc

L6521

Abstract: L6520 SELF OSCILLATING HALF BRIDGE DRIVER IC
Contextual Info: L6520 L6521 Highly integrated ballast controller for TL and CFL Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ Very accurate oscillator precision in wide operating temperature range ■ BJTs' storage time compensation ■

9435R

Abstract: NSB9435T1
Contextual Info: NSB9435T1 Preferred Device High Current Bias Resistor Transistor PNP Silicon • Collector –Emitter Sustaining Voltage – http://onsemi.com VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc • High DC Current Gain – POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS

8 pin ic 9435

Abstract: 9435, ic 9435 transistor 9435a 9435 sot ic 9435 9435 SOT223 marking code 9435 9435 a BD 135 transistor
Contextual Info: MMJT9435 Preferred Device Bipolar Power Transistors PNP Silicon Features • Pb−Free Packages are Available • Collector −Emitter Sustaining Voltage − • • • • • http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.275 VOLTS

L6520

Abstract: ccp 3400 st ELECTRONIC ballast choke details programmable ignition automotive ccp 3400 bjt half bridge driver Ignition Transformer Drive Base BJT lsd 0007
Contextual Info: L6520 Low voltage smart ballast controller Preliminary data Features • Half bridge circuit able to drive both BJT and MOSFET transistors ■ BJTs' storage time compensation ■ Preheated start and instant start ■ Hard switching protection ■ Overcurrent / voltage protection

2N4906

Contextual Info: 2N4906 Si PNP Power BJT 3.65 Transistors Bipolar Silicon PNP Power. 1 of 1 Home Part Number: 2N4906 Online Store 2N4906 Diodes Si PNP Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits