BIPOLAR ZENER Search Results

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

MGP2N60D

Contextual Info: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching

GT30J124

Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Contextual Info: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.

pin diagram of IC ca3130

Abstract: CA3140 PIN DIAGRAM OF IC CA3140 CA3140S ca3140 equivalent ca3109 CA3019 ca3109 diode array ca3140 equivalents tone control circuit
Contextual Info: CA3140, CA3140A Data Sheet September 1998 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a single

CA3140

Abstract: IC CA3140 DATA SHEET CA3019 ca3109 baxandall CA3140S ca3140 application circuit 50hz wien oscillator IC CA3140 CA3140A
Contextual Info: CA3140, CA3140A Data Sheet November 2002 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a

CA3140T

Abstract: PIN DIAGRAM OF IC CA3140 ca3140 AN6668 ca3140 application circuit CA3140S ca3109 diode array baxandall ca 3080a 50hz wien oscillator
Contextual Info: CA3140, CA3140A Data Sheet March 2002 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a single

tektronix 576 curve tracer

Abstract: NDS351N high power pulse generator with mosfet PN channel MOSFET 10A tektronix type 576 curve tracer RC snubber circuit
Contextual Info: Application Note 558 Ralph Locher Introduction to Power MOSFETs and their Applications INTRODUCTION The Power MOSFETs that are available today perform the same function as Bipolar transistors except the former are voltage controlled in contrast to the current controlled Bipolar devices. Today

14N60E

Contextual Info: MOTOROLA O rder this docum ent by M GW 14N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 14N 60ED Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged

Contextual Info: CA3240, CA3240A Data Sheet March 4, 2005 Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output Features The CA3240A and CA3240 are dual versions of the popular CA3140 series integrated circuit operational amplifiers. They combine the advantages of MOS and bipolar transistors on

Contextual Info: MOTOROLA Order this document by MGP4N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP4N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

Contextual Info: MOTOROLA Order this document by MGP15N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP15N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

siemens automotive sensors

Abstract: hall current sensor 3A siemens magnetic sensors "if amplifier" siemens a9011 Hall sensors Siemens Hall Siemens SIEMENS TD-400 1000H DIN40839
Contextual Info: S IE M E N S Integrated Hall-Effect Switches for Unipolar and Alternating Magnetic Fields TLE 4904 F, TLE 4934 F, TLE 4944 F Bipolar-ic Preliminary Data Features • D igital Output Signal • For Unipolar and Bipolar Magnetic Fields • Large Temperature Range

FA5317

Abstract: FA5314 fa5315 pin diagram details of FA5310 FA5311 application FA531X diagrams FA5311 FA5311 pin diagram details of FA5311 FA5310BP
Contextual Info: Bipolar IC For Switching Power Supply Control FA531X series series FA531X • Dimensions, mm SOP-8 5 8 ■ Description 5.3 The FA531X series are bipolar ICs for switching power supply control that can drive a power MOSFET. These ICs contain many functions in a small 8-pin package.

P14N60E/D

Contextual Info: MOTOROLA O rder this docum ent by M G P14N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP14N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

Contextual Info: MOTOROLA O rder this docum ent by M G P21N60E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GP21N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high

G40N60

Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
Contextual Info: HGTG40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar

B150A

Contextual Info: Tem ic Series A S e m i c o n d u c t o r s Analog Arrays Description The series A is a bipolar product family offering the possibility of fast and economic production of high-performance custom analog circuits. The bipolar process offers a breakdown voltage of 24 V

diode lt 238

Abstract: 21N60ED
Contextual Info: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced

GA900

Abstract: NPN RF Amplifier pnp 8 transistor array RF Bipolar Transistor DIP array resistors
Contextual Info: INFORMATION NOTE GENNUM C O R P O R A T I O N 510-22 RF BIPOLAR GA900 SEMICUSTOM ARRAY Gennum offers a 2 GHz bipolar uncommitted array that is designed for RF circuit applications required in low power mobile VHF / UHF communications. Using a linear process, the array is suitable for control circuitry,

active bandpass filter 300 khz

Abstract: PD7500-SERIES PD7500 infrared receiver diode
Contextual Info: b457SE5 0030550 NEC ELECTRON DEVICE b DATA SH EET Preliminary BIPOLAR ANALOG INTEGRATED CIRCUIT N E C E L E C T R O NI C S I NC 30 E D P C 1 4 9 3 M REMOTE CONTROL PREAM PLIFIER DESCRIPTION The juPC1493 ¡s bipolar integrated circuit intended for application in infrared remote controls.

B250D

Abstract: B500D
Contextual Info: Tem ic Series D S e m i c o n d u c t o r s Mixed-Signal Arrays Description The series D is a bipolar product family offering the possi­ bility of fast and economic production of high-performance custom mixed-signal circuits. The bipolar process offers a breakdown voltage of 24 V

Contextual Info: SCS-THOMSON liainmgiigiLgCTiaimniBS BU941ZT/BU941ZTFI BU941ZSM HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER . HIGH OPERATING JUNCTION TEMPERATURE . WIDE RANGE OF PACKAGES . POWER PACKAGE SPECICALLY

Contextual Info: ST931ZT HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON . VERY RUGGED BIPOLAR TECHNOLOGY . BUILT IN CLAMPING ZENER . HIGH OPERATING JUNCTION TEMPERATURE APPLICATIONS . HIGH RUGGEDNESS ELECTRONIC IGNITIONS DESCRIPTION The ST931ZT is specifically designed for