1N6036A Search Results

IN6052A

Abstract: 1N6062A in6064a 1N6072A 1N6041A 1N6053A in60 1N6054A 1N6045A 1N6039A
Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients

1N6072A

Abstract: 1N6066A
Contextual Info: 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES DO-13 The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients can permanently damage sensitive components. Because o f their high surge capability

Contextual Info: 1N6036A+JANTX Diodes Bidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage7.5 @I(R) (A) (Test Condition)10m V(RWM) (V) Work.Pk.Rev.Voltage6.0 I(PPM) Max.(A)Pk.Pulse Current132

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients

Contextual Info: Transient Voltage Suppressors Part Number JANTXV1N6470 SMCG6.0 SMCG6.0A SMCJ6.0 SMCJ6.0A 1N6036A 1N6036A 1N6036A 1N6036A 1.5KCD7.5 1.5KE7.5 1N5630 1N6268 CD6268 1N6140 1N6140US JAN1N6140 JAN1N6140US JANTX1N6140 JANTX1N6140US JANTXV1N6140 JANTXV1N6140US

1N6066A

Contextual Info: Back to Zener Diodes 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES DO-13 The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients

1N6037A

Abstract: 1N6036A JESD22-A102 Diode LT 5230
Contextual Info: INCH-POUND MIL-PRF-19500/717 9 May 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, NON-HERMETIC, EPOXY, SURFACE MOUNT, SILICON, BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR, TYPES 1N6036AUEG THROUGH 1N6072AUEG, 1N6036AUEJ THROUGH 1N6072AUEJ, JAN, JANTX, AND JANTXV

Contextual Info: 1N6036A+JANTXV Diodes Bidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage7.5 @I(R) (A) (Test Condition)10m V(RWM) (V) Work.Pk.Rev.Voltage6.0 I(PPM) Max.(A)Pk.Pulse Current132

Contextual Info: 1N6036A+JAN Diodes Bidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage7.5 @I(R) (A) (Test Condition)10m V(RWM) (V) Work.Pk.Rev.Voltage6.0 I(PPM) Max.(A)Pk.Pulse Current132

Contextual Info: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

Contextual Info: 1N6036 - 1N6072A series 1N6036 - 1N6072A IN60 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES • Stand-off voltage range 6.8 - 200 Volts • Glass Passivated Junction 31.8Min

IN6052A

Abstract: 1N6036 IN6055A in6064a 1N6058 1N6060 1N6061 1N6067A 1N6068 1N6068A
Contextual Info: 1N6036 thru Microsemi Corp. 1N6072A TRANSIENT Features • 1500 watts peak power dissipation • Available in standoff voltages from 5.5V to 185V • DO-13 hermetically sealed package • Bidirectional • UL recognized 1N6070A] ABSOREITION ZENER Description

cczl

Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL

Contextual Info: Silicon Avalanche Diodes 1500 Watt Metal Axial Leaded Transient Voltage Suppressors 1N60 Series FEATURES 6 • Hermetically sealed SILICON DIODE ARRAYS • Breakdown voltage range 6.8 - 200 volts • Glass passivated junction • Low zener impedance • 100% surge tested

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

1N6055A JANTX

Abstract: 1N6041A 1N6047A JAN 1N6036A JANTXV JAN 1N6039 1N6036 1N6036A 1N6072 1N6072A IEC61000-4-4
Contextual Info: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 1500 WATT BIDIRECTIONAL

1N6059

Abstract: 1N6055A JANTX 1N6036A 1N6037A 1N6038A 1N6039A 1N6072A VQE 21 d 452a
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 November 2007. INCH-POUND MIL-PRF-19500/507E 7 August 2007 SUPERSEDING MIL-PRF-19500/507D 8 August 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, BIPOLAR TRANSIENT

1N6071A JANTX

Contextual Info: 1N6036 A * thru 1N6072(A)* Available on commercial versions 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/507 DESCRIPTION This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru 1N6072A are JEDEC

1N6045A JAN

Abstract: n6*a n6055 1N6036 1N6036A 1N6037 1N6037A 1N6038 1N6072A 1n6054a jan
Contextual Info: 1N6036 thru 1N6072A Micro/semi Corp. The d io d f experts SANTA ANA. CA SCOTTSDALE, AZ F o r more inform ation call: 602 941-6300 FEATU R ES BIDIRECTIONAL TRANSIENT ABSORPTION ZENER • 1500 W ATTS P EA K PO W ER DISSIPATION • A V A ILA B LE IN S T A N D O F F VOLTAGES FRO M 5.5V TO 185V

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

Contextual Info: im ia s T o t. . TransZorb QUICK REFERENCE GUIDE PROVIDING PROTECTION FOR :• • Telecommunications &:7S$ ' • Military ÌH • Computer • Industrial ■\. '’ • . .Test & Vyt. I\\ Instrumentation • Medical • Automotive A General Industriès, Inc.

Contextual Info: GENL IN S TR / 5bE POlilER General ^ ^ Semiconductor ^ • Industries, Inc. 30Tni37 T-J/-23 THRU MECHANICAL CHARACTERISTICS DESCRIPTION • Body marked w ith Logo «J* and type number ELECTRICAL CHARACTERISTICS Clamping Factor 1.33 at full rated power 1.20 at 50% rated power

Micronote 130

Abstract: MicroNote130 Microsemi micronote series 050 micronote 104 DO-160F microsemi TVS RT130KP275-295CA DO-160E 1N64611 PLAD30KPxxx
Contextual Info: MicroNote 130 by Kent Walters MICRONOTE 130 OVERALL SELECTION OF TRANSIENT VOLTAGE SUPPRESSOR PART NUMBERS FOR RTCA/DO-160 Microsemi - Scottsdale, AZ kwalters@microsemi.com By Kent Walters Previous Microsemi MicroNotes 104, 125 and 127 have described how to calculate and