BIPOLAR TRANSISTORS Search Results

BIPOLAR TRANSISTORS Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet
TTC5712	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=3 A / hFE=400~1000 / VCE(sat)=0.14 V / tf=120 ns / PW-Mini	Datasheet
TPCP8512	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.21 V / tf=120 ns / PS-8	Datasheet

BIPOLAR TRANSISTORS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
POWER TRANSISTORS Contextual Info: Back to Bipolar Power Transistors Back to Bipolar Power Transistors	Original	power transistors	PDF
darlington Abstract: "Darlington Transistors" Darlington Transistors Transistors Contextual Info: Back to Bipolar Darlington Transistors Back to Bipolar Darlington Transistors	Original	darlington darlington transistors transistors	PDF
Contextual Info: Section S: Bipolar Transistors index Bipolar Trm isistor Index » . - Z [ n x	OCR Scan		PDF
Contextual Info: International pmia ^Rectifier_ IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgmc40u mil-s-1950g t0-254 s54s2	PDF
IRGAC50U Abstract: transistor G46 IGBT g48 ge 142 bt 34w Contextual Info: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	pd926a irgac50u 001flb5g transistor g46 +3igbt g48 ge 142 bt 34w	PDF
GT30F131 Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004l ttc4116 2sc4118 tta1586 +162sa1588 2sc4117 2sa1587 2sc5233 2sc4738 2sa1832 gt30f131 gt30f124 tk18a60v smd m5 transistor 6-pin smd transistor h2a npn gt50n322 marking smd pnp transistor h2a gt30j124 30f124 tpcp8r01	PDF
100-C Abstract: IRGMC30F 9714A Contextual Info: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgmc30f irgmc30fd irgmc30fu mil-s-19500 +3o-254 100-c 9714a	PDF
GT30J124 Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	sce0004i sc-43 2sc1815 gt30j124 +9smd transistor h2a gt45f122 tpcp8r01 gt30f123 2sc1815 smd type smd marking 8l01 h2a smd 2sc5471 2sc5200 amplifiers circuit diagram	PDF
Contextual Info: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgmc50f irgmc50fd irgmc50fu o-254 +24fiss45s mil-s-19500	PDF
Contextual Info: International S Rectifier PD-9.722A IRGAC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgac30u	PDF
IR 92 0151 Abstract: IRGAC40F IRGAC40 transistor g23 Contextual Info: International TOR PD-9.723A ]Rectifier IRGAC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgac40f ir 92 0151 irgac40 transistor g23	PDF
2sc 1740 TRANSISTOR equivalent Abstract: 40HFL60 IRGMC40F 480V1 Contextual Info: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	pd96a irgmc40f irgmc40fd irgmc40fu +5mil-s-19500 o-254 2sc 1740 transistor equivalent 40hfl60 480v1	PDF
irc30ud Abstract: IRGMC30U Contextual Info: International Ira]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgmc30u irgmc30ud irgmc30uu mil-s-19500 +2o-254 ir*c30ud	PDF
til 31a Abstract: IRGMC40U Contextual Info: International ïor iRectifier PD-9.717A IRGMC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgmc40u irgmc40ud irgmc40uu mil-s-19500 +2o-254 til 31a	PDF

IRGAC50F Abstract: G37 IC J3060 transistor g35 ecs g41 IRGAC50 Contextual Info: International lü ] Rectifier PD-9.725A IRGAC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgac50f 40hfl60 s54s5 lflb43 +7ss452 lflb44 g37 ic j3060 transistor g35 ecs g41 irgac50	PDF
transistor 9721 Abstract: 9721 mosfet to3 Contextual Info: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgac30f dd10bl5 transistor 9721 9721 +1mosfet to3	PDF
IRGMC50F Abstract: IRGMC50FD IRGMC50FU 39AF Contextual Info: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgmc50f irgmc50fd irgmc50fu mil-s-19500 +2o-254 39af	PDF
Contextual Info: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgmc50u o-254 irgmc50ud irgmc50uu +1g-105	PDF
Contextual Info: International pd-9 a igR]Rectifier_ IRGMC30F INSULATED GATE BIPOLAR TRANSISTO R Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgmc30f irgmc30fd irgmc30fu o-254 +1il-s-19500	PDF
T3D 87 Abstract: t3d 99 G-100 IRGMC50U Contextual Info: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgmc50u irgmc50ud irgmc50uu mil-s-19500 +5o-254 g-105 t3d 87 t3d 99 g-100	PDF
Contextual Info: International ««•"« B H Rectifier_ IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	irgmc40f irgmc40fd irgmc40fu mil-s-19500	PDF
Contextual Info: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en sities than com parable bipolar transistors, while	OCR Scan	irgmc30u irgmc30ud irgmc30uu o-254 +24fls5455 001flb73	PDF
PJ 986 Abstract: pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD IGTH20N50AD Contextual Info: - Insulated-Gate Bipolar Transistors IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD File Number 2271 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs	OCR Scan	igth20n4qd igth20n40ad igth20n50d igth20n50ad +8igth20n40d pj 986 pj 986 diode 20n50a pj 809 20n50 20n40 20n50d	PDF
pioneer mosfet audio amp ic Abstract: 12V ENERGY LIGHT CIRCUIT DIAGRAM vmn3 package DTC143T datasheet TRANSISTOR SMD catalog Equivalent transistors for UMD2N smd ya transistor 2SD2211 2SA1576UB 2SC6114 Contextual Info: Product Catalog Bipolar Transistors Digital Transistors Discrete Semiconductors 2008-Feb. www.rohm.com ROHM Bipolar Transistors / Digital Transistors Bipolar Transistors are currently recognized as essential key devices for the electronics industry. ROHM as a leading company is supplying a great	Original	2008-feb sc-75a ot-416 50p5876e +10pioneer mosfet audio amp ic 12v energy light circuit diagram vmn3 package dtc143t datasheet transistor smd catalog equivalent transistors for umd2n smd ya transistor 2sd2211 2sa1576ub 2sc6114	PDF

BIPOLAR TRANSISTORS Search Results

BIPOLAR TRANSISTORS Result Highlights (5)

BIPOLAR TRANSISTORS Datasheets Context Search

POWER TRANSISTORS

darlington

IRGAC50U

GT30F131

100-C

GT30J124

IR 92 0151

2sc 1740 TRANSISTOR equivalent

ir*c30ud

til 31a

IRGAC50F

transistor 9721

IRGMC50F

T3D 87

PJ 986

pioneer mosfet audio amp ic