74s* programming
Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131
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mcm10149mcm7620n82s130mcm7621+10n82s131mcm7643cn82s137n82hs137mcm7641cn82s14174s* programmingn82s16prom 256x4 bitmcm7681c
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8 bit ttl mux
Abstract: 82HS321 82HS321A
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which
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32k-bit82hs321a82hs321-250na+4500ns711gfl2b711002b8 bit ttl mux
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GDFP2-F24
Abstract: 82HS321 82HS321A
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which
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32k-bit82hs321a82hs321-250na+4500ns711dfl2fa711002bgdfp2-f24
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mod 16 counter
Abstract: DM86S64 dm86s64cab m86s 7x9 decoder DM86S64CAB/N
Contextual Info: DM76S64/DM86S64 Bipolar PROMs N atio nal S em ico n d u cto r DM76S64/DM86S64 Bipolar Character Generator General Description th e ch aracter addresses "fa ll th ro u g h " the latch. And w h en the address latch co n tro l signal goes lo w , the The DM76S64/DM86S64 is a 64-character bipolar
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dm76s64/dm86s6464-character16-pindm76s64/+6dm86s64mod 16 counterdm86s64cabm86s7x9 decoderdm86s64cab/n
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82S321
Abstract: N82S321 32-Kbit 750FL Signetics Generic I fusing procedure
Contextual Info: 82S321 Signetics 32K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure.
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82s32132k-bit750fl750i2+3n82s32132-kbitsignetics generic i fusing procedure
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prom 32x8
Abstract: GDFP2-F16 82s123 philips GDIP1-T16 82s123 82S123/BEA TRANSISTORS 123A 82S23 S23B GDIP1T-16
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32x8 APPLICATIONS DESCRIPTION • Prototyping/volume production • Sequential controllers • Format conversion • Hardwired algorithms
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82s23/s23a/s23b82s123/123a/123b256-bit82s23+1082s123500nsprom 32x8gdfp2-f1682s123 philipsgdip1-t1682s123/beatransistors 123as23bgdip1t-16
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8x305
Abstract: BIPOLAR MEMORY
Contextual Info: Signetics 8X350-40 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The 8X350-40 bipolar RAM is designed principally as a working storage element in an 8X305 based system. Internal circuitry
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8x350-408x3058x3508x37x+1bipolar memory
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SIGNETICS prom
Contextual Info: 82S147B Signetics 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 82S147B is field-programmable, which means that custom patterns are immediately available by following the Signetics Generic Ifusing procedure. The
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82s147b512x8signetics prom |
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82s141
Abstract: 82S141/BKA mux 8 to 1 timing 8 bit ttl mux 8 INPUT 4 OUTPUT MUX GDFP2-F24
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S141 • Microprogramming • Hardwired algorithms • Control store • Random logic • Code conversion FEATURES • Address access time: 90ns max
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512x882s141500ns82s141/bka+4mux 8 to 1 timing8 bit ttl mux8 input 4 output muxgdfp2-f24
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10P256
Abstract: PROM32 10P256F
Contextual Info: 10P256 256—Bit ECL Bipolar PROM Preliminary Specification Bipolar Memory Products DESCRIPTION FEATURES The 10P256 is field programmable, meaning that custom patterns are imme diately available by following the Signetics Generic IV Programming procedure. The
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10p256256-bitprom3210p256f |
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82S131
Abstract: GDFP2-F16 GDIP1-T16 82S130A 82S131A
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 2K-bit TTL bipolar PROM 512 x 4 82S131A DESCRIPTION FEATURES The 82S130A and 82S131A are field-programmable, which means that custom patterns are immediately available by following the
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82s130a82s131a-150pa270ft+382s131gdfp2-f16gdip1-t16
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Signetics 82S191
Abstract: 82S191 82S191A signetics generic procedure
Contextual Info: Signetics 82S191, 82S191A Military Bipolar Memory Products Product Specification 16K-Bit TTL Bipolar PROM DESCRIPTION The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing
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82s19182s191a82s19100ns+316k-bitsignetics 82s191signetics generic procedure
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82S141/8708+prom
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150jiA max • Control store
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82s141-150jia1002b711002b+182s141/8708+prom
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CQCC2-N28
Abstract: 82S181A 1024 x 4 prom GDIP1-T24
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 DESCRIPTION FEATURES The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
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82s181a500ns711qfi2bcqcc2-n28+21024 x 4 promgdip1-t24
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GDIP1-T16
Abstract: GDFP2-F16 82S23 S23B 82s123 philips 82S123/BEA 82S123 82s123b PROM32 82S23A/BFA
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32 x 8 APPLICATIONS DESCRIPTION • Prototyping/volume production The 82S23 and 82S123 are field-programmable, which means that
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256-bit82s23/s23a/s23b82s123/123a/123b82s23+1182s123500nsauqust24gdip1-t16gdfp2-f16s23b82s123 philips82s123/bea82s123bprom3282s23a/bfa
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prom 256x4 bit
Abstract: GDIP1-T16 82S129A/BEA 82S126A 82S129A GDFP2-F16 bipolar PROM 32 x 32 matrix
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126A 82S129A 1K-bit TTL bipolar PROM 256x4 FEATURES DESCRIPTION • Address access time: 35ns max • Input loading: -150µA max • On-chip address decoding • Output options:
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82s126a82s129a256x4500ns+6prom 256x4 bitgdip1-t1682s129a/beagdfp2-f16bipolar prom32 x 32 matrix
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signetics PROM
Abstract: 82HS321A 82HS321B Signetics MUX
Contextual Info: 82HS321A/82HS321B Signetics 32K-Bit TTL Bipolar PROM 4096 X 8 Military Bipolar Memory Products DESCRIPTION The 82HS321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The
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82hs321a/82hs321b32k-bit82hs321signetics prom+382hs321a82hs321bsignetics mux
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82HS195ABRA
Contextual Info: 82HS195A Signetics 16K-Bit TTL Bipolar PROM Military Bipolar Memory Products DESCRIPTION The 82HS195A is field programmable, which means that custom patterns are immediately available by following the Generic II fusing procedure. The Signetics 82HS195A supplied with all
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82hs195a16k-bit82hs195abra |
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82s291a
Contextual Info: Signetics 82S291A 16K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification APPLICATIONS DESCRIPTION FEATURES The 82S291A is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The
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82s291a16k-bit |
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O2-A2
Abstract: f0035 82S137A GDIP1-T18
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 4K-bit TTL bipolar PROM 1024 x 4 82S137A DESCRIPTION FEATURES The 82S137A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
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82s137a-150jia600ft500ns+57110fl5b00flso2-a2f0035gdip1-t18
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SIGNETICS 82S141
Abstract: SIGNETICS prom ttl 512 IC TTL 4700 82S141/BJA 82S141
Contextual Info: Signetics 82S141 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES APPLICATIONS The 82S141 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure. The
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82s1411000ftsignetics 82s141signetics prom ttl 512+2ic ttl 470082s141/bja
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82S137
Abstract: 4 to 16 decoder for ttl circuit GDIP1-T18 bipolar PROM 1024X4 a2712 1024x4 prom
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 1024x4 82S137 FEATURES DESCRIPTION • Address access time: 70ns max • Input loading: -150µA max • On-chip address decoding • No separate fusing pins
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1024x482s137500ns4 to 16 decoder for ttl circuit+4gdip1-t18bipolar proma27121024x4 prom
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82S147B
Abstract: F0180 mux 8 to 1 timing
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512x8 82S147B FEATURES DESCRIPTION • Address access time: 45ns max • Input loading: -150µA max • One chip enable input • On-chip address decoding
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512x882s147b500nsf0180+1mux 8 to 1 timing
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N82S126
Abstract: 82S126 32 x 32 matrix prom 256x4 bit 82S129
Contextual Info: BIPOLAR MEMORY MAY 1982 1024-BIT BIPOLAR PROM 256x4 82S126 (O.C.)/82S129 (T.S.) DESCRIPTION FEATURES The 82S126 and 82S129 are field p ro g ra m mable, w hich means th a t cu sto m patterns
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1024-bit256x482s126/82s129+482s129n82s12632 x 32 matrixprom 256x4 bit
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