BIPOLAR POWER TRANSISTOR VCE 600 VOLT Search Results

CM400E4G-130H

Abstract: cm400e2
Contextual Info: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E4G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E4G-130H ● IC ………………………

Contextual Info: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E2G-130H ● IC ………………………

CM400HG130H

Contextual Info: CONFIDENTIAL Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules COMPANY PROPRIETARY

CM400HG-66H

Abstract: mitsubishi The label version
Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H ● IC . 400A ● VCES . 3300V

CM800DZB-34N

Abstract: 1000v bipolar transistor hvigbt diode
Contextual Info: MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZB-34N ● IC . 800A ● VCES . 1700V

BIPOLAR TRANSISTOR

Abstract: bipolar power transistor vce 600 volt ks53 KS534505
Contextual Info: POIiJEREX INC m Tfl n /m 1 E J ? 5 ^ 4 t 5 1 OOOEOEfl _ x Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412) 925-7272 t p 3 3-^ D KS534505 S in C flB B ip o ld l" Transistor Module 50 Amperes/600 Volts Description Powerex Single Bipolar Transistor

SWITCHING TRANSISTOR 144

Abstract: CM1800HC-34N igbt transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34N ● IC . 1800A ● VCES . 1700V

CM1800HC-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H ● IC . 1800A ● VCES . 1700V

CM600DY-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V

CM800HC-66H

Abstract: r 1241 transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V

CM600HB-90H

Abstract: 7400 ic diagram
Contextual Info: MITSUBISHI HVIGBT MODULES CM600HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HB-90H ● IC . 600A ● VCES . 4500V

GA200SA60SP

Abstract: smps tig welding transistor 342 G
Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

CM800

Abstract: CM800E6C-66H bipolar transistor 124 e mitsubishi The label version
Contextual Info: MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800E6C-66H ● IC . 800A ● VCES . 3300V

PER12

Contextual Info: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V

CM600E2Y-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H ● IC . 600A ● VCES . 1700V

Contextual Info: MITSUBISHI HVIGBT MODULES CM600E2Y-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600E2Y-34H ● IC . 600A ● VCES . 1700V

nf 0036 diode

Abstract: CM400DY-50H
Contextual Info: MITSUBISHI HVIGBT MODULES CM400DY-50H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H ● IC . 400A ● VCES . 2500V

CM400HB-90H

Abstract: 5725C
Contextual Info: MITSUBISHI HVIGBT MODULES CM400HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HB-90H ● IC . 400A ● VCES . 4500V

CM900HB-90H

Contextual Info: MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM900HB-90H ● IC . 900A ● VCES . 4500V

GA200SA60SP

Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C • Lowest conduction losses available • Fully isolated package (2500 VAC)

CM1200HCB-34N

Abstract: TRANSISTOR JC 515 transistor 2955
Contextual Info: MITSUBISHI HVIGBT MODULES CM1200HCB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM1200HCB-34N ● IC . 1200A ● VCES . 1700V

GA200SA60SP

Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

LC100A

Contextual Info: POQJEREX INC O W Tfl E R E DE | TEIMbai 00D2Q3S □ | - T - 2 ,3 ' ¿7 KT234510 X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412) 925-7272 S p H t-D U S l B ip O lS t Transistor Module 100 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor

GA100NA60UP

Abstract: ultrafast igbt information OF ic 7400
Contextual Info: GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses