CM400HG Search Results

CM400HG130H

Contextual Info: CONFIDENTIAL Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules COMPANY PROPRIETARY

CM400HG-130H

Abstract: cm400hg-130 CM400HG130H cm400hg
Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 Revision: A CM400HG-130H rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-130H ●IC ……………………… 400 A

525k

Abstract: CM400HG-66H HVIGBT
Contextual Info: 三菱半導体〈HVIGBTモジュール〉 CM400HG-66H 大電力スイッチング用 絶縁形 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor モジュール CM400HG-66H ● IC . 400 A

D 400 F 6 F BIPOLAR TRANSISTOR

Contextual Info: MITSUBISHI HVIGBT MODULES Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM400HG-130H IC ……………………… 400 A

HVIGBT

Abstract: CM400HG-66H
Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 103 20 VGE = 0V, Tj = 25°C

Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H ● IC . 400A ● VCES . 3300V

Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HG-66H ● IC . 400 A ● VCES . 3300 V

MITSUBISHI CM400HG-66H

Abstract: D 400 F 6 F BIPOLAR TRANSISTOR HVIGBT 525k CM400HG-66H hvigbt diode 3g124
Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HG-66H ● IC . 400 A ● VCES . 3300 V

CM400HG-66H

Abstract: mitsubishi The label version
Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H ● IC . 400A ● VCES . 3300V

PS51259-AP

Abstract: induction heating cooker IGBT MOTOR CONTROL RM250HA-10F induction cooker free circuit diagram rm30tna-h PS5 1020 CM400E4G-130H pwm INVERTER welder rm450ha-5h
Contextual Info: Power Devices General Catalog The search for state-of-the-art technology has landed on energy-savings and environmental protection. Mitsubishi Power Devices meets demands for energy-saving and eco-friendly semiconductors with advanced technology and a diversified product lineup. Industrial use,

RM15TB-H

Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
Contextual Info: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;