SIGNETICS
Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131
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mcm10149mcm7620n82s130mcm7621+14n82s131mcm7643cn82s137n82hs137mcm7641cn82s141signeticssignetics bipolar memory cross referencen82s191n82s25tbp28p8674s289n82s129tbp24s41
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74s* programming
Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131
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mcm10149mcm7620n82s130mcm7621+10n82s131mcm7643cn82s137n82hs137mcm7641cn82s14174s* programmingn82s16prom 256x4 bitmcm7681c
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N82S131
Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131
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mcm10149mcm7620n82s130mcm7621+8n82s131mcm7643cn82s137n82hs137mcm7641cn82s141n82s123mcm7681c
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26 SIGNETICS
Abstract: 32X2 32X8 82S21 74181 pin configuration
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 64-BIT BIPOLAR WRITE-WHILE-READ RAM 32 x 2 TIMING DIAGRAMS 2-10 (C on td ) Signetics 82S21 (O.C.) BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR WRITE-WHILE-READ RAM ( 3 2 x 2 ) 82S21 (O .C .) TYPICAL APPLICATION BASIC 8-B IT FULLY BUFFERED A C C U M ULATO R
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64-bit82s2182s3364-b1t+426 signetics32x232x874181 pin configuration
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8x305
Abstract: BIPOLAR MEMORY
Contextual Info: Signetics 8X350-40 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification PIN CONFIGURATION DESCRIPTION FEATURES The 8X350-40 bipolar RAM is designed principally as a working storage element in an 8X305 based system. Internal circuitry
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8x350-408x3058x3508x37x+1bipolar memory
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ram 256x8
Abstract: N8X350 8X350 8X300 N8X350F 8X305 S8X350 SC10 8x300 Signetics Application Notes sc1012
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 2048-BIT BIPOLAR RAM 256 X 8 DESCRIPTION 8X350 (T.S.) TYPICAL I/O STRUCTURE PIN CONFIGURATION The 8X350 bipolar RAM is designed p rinci p ally as a w orking sto ra g e elem ent in an 8X300 based system . Internal circuitry is
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2048-bit256x88x3508x300+10n8x350-fs8x350-fram 256x8n8x350n8x350f8x305s8x350sc108x300 signetics application notessc1012
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8X350
Abstract: F0380 8x305
Contextual Info: Signetics 8X350 2K-Bit TTL Bipolar RAM 256 x 8 Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 8X350 bipolar R A M is designed prin cipally as a working storage element in an 8X305 based system. Internal circuitry is provided for direct use in 8X305 applica
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microcontroller based inverter
Abstract: microchip inverter laser diode samsung microchip inverter application notes DK-2750 TB061 200B 2.5v zener
Contextual Info: TB061 Bipolar PICmicro Power Systems SELF DRIVEN CHARGE PUMP Author: Joseph Julicher Microchip Technology Inc. BIPOLAR PICMICRO POWER SYSTEMS Introduction On occasion, it is convenient to power a PICmicro microcontroller from a bipolar supply. This allows an
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tb061rs-232d-85737ds91061a-page+7microcontroller based invertermicrochip inverterlaser diode samsungmicrochip inverter application notesdk-2750200b2.5v zener
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8 bit ttl mux
Abstract: 82HS321 82HS321A
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which
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32k-bit82hs321a82hs321-250na+4500ns711gfl2b711002b8 bit ttl mux
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GDFP2-F24
Abstract: 82HS321 82HS321A
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which
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32k-bit82hs321a82hs321-250na+4500ns711dfl2fa711002bgdfp2-f24
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82S321
Abstract: N82S321 32-Kbit 750FL Signetics Generic I fusing procedure
Contextual Info: 82S321 Signetics 32K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure.
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82s32132k-bit750fl750i2+3n82s32132-kbitsignetics generic i fusing procedure
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prom 32x8
Abstract: GDFP2-F16 82s123 philips GDIP1-T16 82s123 82S123/BEA TRANSISTORS 123A 82S23 S23B GDIP1T-16
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32x8 APPLICATIONS DESCRIPTION • Prototyping/volume production • Sequential controllers • Format conversion • Hardwired algorithms
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82s23/s23a/s23b82s123/123a/123b256-bit82s23+1082s123500nsprom 32x8gdfp2-f1682s123 philipsgdip1-t1682s123/beatransistors 123as23bgdip1t-16
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SIGNETICS prom
Contextual Info: 82S147B Signetics 4K-Bit TTL Bipolar PROM Military Bipolar Memory Products Product Specification DESCRIPTION FEATURES The 82S147B is field-programmable, which means that custom patterns are immediately available by following the Signetics Generic Ifusing procedure. The
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82s147b512x8signetics prom |
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Signal Path designer
Contextual Info: Testing High-Performance Advanced Micro Devices Bipolar Memory INTRODUCTION During the last several years, the state-of-the art of TTL compatible bipolar memory integrated circuits has advanced very rapidly. Device complexity has increased dramatically not
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signal path designer |
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10P256
Abstract: PROM32 10P256F
Contextual Info: 10P256 256—Bit ECL Bipolar PROM Preliminary Specification Bipolar Memory Products DESCRIPTION FEATURES The 10P256 is field programmable, meaning that custom patterns are imme diately available by following the Signetics Generic IV Programming procedure. The
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10p256256-bitprom3210p256f |
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MIC5205-3.0
Abstract: TC1014 TC1015 TC1054 TC1055 TC1070 TC1071 TC1185 TC1186 TC1187
Contextual Info: M AN766 Pin-Compatible CMOS Upgrades to Bipolar LDOs Author: SUPPLY CURRENT: CMOS VS. BIPOLAR Don Alfano, Danny Alred, Abid Hussain and Paul Paglia, Microchip Technology Inc. INTRODUCTION Bipolar low dropout regulators LDOs have become common place in a variety of portable applications,
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an766d-85737ds00766b-pagemic5205-3.0+9tc1014tc1015tc1054tc1055tc1070tc1071tc1185tc1186tc1187
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82S131
Abstract: GDFP2-F16 GDIP1-T16 82S130A 82S131A
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 2K-bit TTL bipolar PROM 512 x 4 82S131A DESCRIPTION FEATURES The 82S130A and 82S131A are field-programmable, which means that custom patterns are immediately available by following the
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82s130a82s131a-150pa270ft+382s131gdfp2-f16gdip1-t16
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Signetics 82S191
Abstract: 82S191 82S191A signetics generic procedure
Contextual Info: Signetics 82S191, 82S191A Military Bipolar Memory Products Product Specification 16K-Bit TTL Bipolar PROM DESCRIPTION The 82S191 and 82S191A are field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing
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82s19182s191a82s19100ns+316k-bitsignetics 82s191signetics generic procedure
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82S141/8708+prom
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 4K-bit TTL bipolar PROM 512 x 8 82S141 FEATURES • Microprogramming • Address access time: 90ns max • Hardwired algorithms • Input loading: -150jiA max • Control store
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82s141-150jia1002b711002b+182s141/8708+prom
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CQCC2-N28
Abstract: 82S181A 1024 x 4 prom GDIP1-T24
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 82S181A 8K-bit TTL bipolar PROM 1024 x 8 DESCRIPTION FEATURES The 82S181A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
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82s181a500ns711qfi2bcqcc2-n28+21024 x 4 promgdip1-t24
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CE0102
Abstract: 82S181 CQCC2-N28
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 8K-bit TTL bipolar PROM 1024 x 8 82S181 DESCRIPTION FEATURES The 82S181 is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I
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82s181500ns0gfl5074711002b+2ce0102cqcc2-n28
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GDIP1-T16
Abstract: GDFP2-F16 82S23 S23B 82s123 philips 82S123/BEA 82S123 82s123b PROM32 82S23A/BFA
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S23/S23A/S23B 82S123/123A/123B 256-bit TTL bipolar PROM 32 x 8 APPLICATIONS DESCRIPTION • Prototyping/volume production The 82S23 and 82S123 are field-programmable, which means that
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256-bit82s23/s23a/s23b82s123/123a/123b82s23+1182s123500nsauqust24gdip1-t16gdfp2-f16s23b82s123 philips82s123/bea82s123bprom3282s23a/bfa
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prom 256x4 bit
Abstract: GDIP1-T16 82S129A/BEA 82S126A 82S129A GDFP2-F16 bipolar PROM 32 x 32 matrix
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 82S126A 82S129A 1K-bit TTL bipolar PROM 256x4 FEATURES DESCRIPTION • Address access time: 35ns max • Input loading: -150µA max • On-chip address decoding • Output options:
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82s126a82s129a256x4500ns+6prom 256x4 bitgdip1-t1682s129a/beagdfp2-f16bipolar prom32 x 32 matrix
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signetics PROM
Abstract: 82HS321A 82HS321B Signetics MUX
Contextual Info: 82HS321A/82HS321B Signetics 32K-Bit TTL Bipolar PROM 4096 X 8 Military Bipolar Memory Products DESCRIPTION The 82HS321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic II fusing procedure. The
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82hs321a/82hs321b32k-bit82hs321signetics prom+382hs321a82hs321bsignetics mux
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