BIPOLAR MEMORY Search Results

SIGNETICS

Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131

74s* programming

Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131

N82S131

Abstract: N82S141 n82s123 MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131

26 SIGNETICS

Abstract: 32X2 32X8 82S21 74181 pin configuration
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 64-BIT BIPOLAR WRITE-WHILE-READ RAM 32 x 2 TIMING DIAGRAMS 2-10 (C on td ) Signetics 82S21 (O.C.) BIPOLAR MEMORY DIVISION MAY 1982 64-BIT BIPOLAR WRITE-WHILE-READ RAM ( 3 2 x 2 ) 82S21 (O .C .) TYPICAL APPLICATION BASIC 8-B IT FULLY BUFFERED A C C U M ULATO R

ram 256x8

Abstract: N8X350 8X350 8X300 N8X350F 8X305 S8X350 SC10 8x300 Signetics Application Notes sc1012
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 2048-BIT BIPOLAR RAM 256 X 8 DESCRIPTION 8X350 (T.S.) TYPICAL I/O STRUCTURE PIN CONFIGURATION The 8X350 bipolar RAM is designed p rinci­ p ally as a w orking sto ra g e elem ent in an 8X300 based system . Internal circuitry is

microcontroller based inverter

Abstract: microchip inverter laser diode samsung microchip inverter application notes DK-2750 TB061 200B 2.5v zener
Contextual Info: TB061 Bipolar PICmicro Power Systems SELF DRIVEN CHARGE PUMP Author: Joseph Julicher Microchip Technology Inc. BIPOLAR PICMICRO POWER SYSTEMS Introduction On occasion, it is convenient to power a PICmicro microcontroller from a bipolar supply. This allows an

8 bit ttl mux

Abstract: 82HS321 82HS321A
Contextual Info: Philips Semiconductors Military Bipolar Memory Products Product specification 32K-bit TTL bipolar PROM 4096 x 8 82HS321A FEATURES APPLICATIONS DESCRIPTION • Address access time: • Prototyping/volume production The 82HS321 is field programmable, which

82S321

Abstract: N82S321 32-Kbit 750FL Signetics Generic I fusing procedure
Contextual Info: 82S321 Signetics 32K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S321 is field programmable, which means that custom patterns are immediately available by following the Signetics Generic I fusing procedure.

Signal Path designer

Contextual Info: Testing High-Performance Advanced Micro Devices Bipolar Memory INTRODUCTION During the last several years, the state-of-the art of TTL compatible bipolar memory integrated circuits has advanced very rapidly. Device complexity has increased dramatically not

N82S126

Abstract: 82S126 32 x 32 matrix prom 256x4 bit 82S129
Contextual Info: BIPOLAR MEMORY MAY 1982 1024-BIT BIPOLAR PROM 256x4 82S126 (O.C.)/82S129 (T.S.) DESCRIPTION FEATURES The 82S126 and 82S129 are field p ro g ra m ­ mable, w hich means th a t cu sto m patterns

N82S126AN

Abstract: N82S129AN
Contextual Info: 3188 82S126A 82S129A 1K-Bit TTL Bipolar PROM Product Specification Bipolar Memory Products DESCRIPTION FEATURES The 82S126A and 82S129A are field programmable, which means that cus­ tom patterns are immediately available by following the Signetics Generic I fus­

82S185

Abstract: N82S185 S82S185
Contextual Info: BIPOLAR MEMORY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTION FEATURES The 82S185 is fie ld program m able, w hich means th a t custom p atterns are im m ediate­

Hex schmitt trigger ecl

Abstract: Dual Retriggerable Resettable One Shots ECL 100315 cmos function generator DIP 4 Crystals Clock Generators MM74C14 DIP CRYSTAL MM74C221 monostable ttl
Contextual Info: Logic Products by Function Other Products Logic Product Family Product Description Package Voltage Node 9403A FAST First-In First-Out FIFO Buffer Memory DIP - DM9602 Bipolar-TTL Dual Retriggerable Resettable One Shots DIP 5 DM96L02 Bipolar-TTL Dual Retriggerable Resettable Monostable Multivibrator

M 82S181

Abstract: 82S180 82S181 N82S181 S82S181
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.

N82S181

Abstract: 82S181 N82S141 74S200 mmi 3601 6331-1 prom tbp24sa10 93427C n82s147 MMI 6330
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 8192-BIT BIPOLAR PROM 1024 x 8 DESCRIPTION FEATURES The 82S180 and 82S181 are field program­ mable, which means that custom patterns are immediately available by follow ing the fusing procedure given in this data manual.

bipolar rom 256*4

Abstract: prom 256x4 bit signetics 1016 82S226 82S229
Contextual Info: sggnotiBS 1024-BIT BIPOLAR READ ONLY MEMORY 256x4 ROM FEBRUARY 1975 82S226 82S229 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION PIN CONFIGURATION Th e 82S226 (Open Collector Outputs) and the 82S229 (Tri-State Outputs) are Bipolar 1024-Bit Read O n ly Mem­

Contextual Info: Signetics 82S212/82S212-40 2304-Bit TTL Bipolar RAM 256 x 9 Product Specification Military Bipolar Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The organization of the 82S212-40 allows byte wide storage of data, including parity. Where parity is not required, the ninth bit

SIGNETICS* fusing procedure

Abstract: prom 256x4 bit Bipolar ROM 1K X 4 bipolar rom 256*4 82S27 N82S27
Contextual Info: signotics 1024-BIT BIPOLAR PROGRAMMABLE ROM 256X4 PROM 82S27 JULY 1975 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION The 82S27 is a Bipolar 1024-Bit Read Only Memory, organized as 256 words by 4 bits per word. It is FieldProgrammable, which means that custom patterns are

2048 bit 256x8 bipolar prom

Abstract: 82S115 512x8 PROM 82S114 512X8 signetics PROM
Contextual Info: s ig n o tic s 2048-BIT BIPOLAR ROM 256x8 PROM 4096-BIT BIPOLAR ROM (512x8 PROM) 825114 825115 DIGITAL 8000 SERIES TTL/MEMORY DESCRIPTION PIN CONFIGURATION The 82S114 and 82S115 are Schottky-clamped Read Only Memories, incorporating on-chip data output registers.

N82HS147F

Abstract: 82HS147 N82HS147 4096-BIT
Contextual Info: MAY 1982 BIPOLAR MEMORY DIVISION 4096-BIT BIPOLAR PROM 512x 8 _ 82HS147 (T.S.) DESCRIPTION FEATURES The 82HS147 Is field-programmable, which means that custom patterns are immediate­ ly available by following the fusing proce­ dure given in this data manual. The standard

Contextual Info: FU JITSU Bipolar Mem ories • M B 7151E /H , M B 7152E /H /Y Schottky TTL 16,384-Bit Bipolar Programmable Read-Only Memory D escription The Fujitsu MB7151 and M87152 are high speed Schottky TTL electrically field program mable read only m emories organized as

25CC

Abstract: 82S183 N82S183 S82S183 8192-BIT
Contextual Info: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 X 8 82S183 (T.S.) ABSOLUTE MAXIMUM RATINGS PARAMETER Vcc VIN ta Ts t g Supply voltage Input voltage Temperature range Operating N82S183 S82S183 Storage RATING UNIT +7 + 5 .5 Vdc V dc °C 0 to + 7 5

3UN8

Contextual Info: Signetìcs 10474A 4K-Bit ECL Bipolar RAM Preliminary Specification Bipolar Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 10474A device is a 1024 words by 4 bits fully decoded Read/W rite Random A ccess Memory, designed fo r high speed scratch pad, control and buffer

Contextual Info: FUJITSU ECL 16384-BIT BIPOLAR RANDOM ACCESS MEMORY MBM10484AAugust 1988 Edition 2.0 16384-BIT BIPOLAR ECL RANDOM ACCESS M EM ORY The Fujitsu MBM 10484A is fu lly decoded 16384-bit ECL read/write random access memory designed fo r high-speed scratch pad, control and buffe r storage