BIPOLAR JUNCTION TRANSISTOR NPN VCE 3.7 SERIES Search Results

BT 156 transistor

Abstract: bipolar transistor td tr ts tf
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE1320 Designer’s Data Sheet NPN Silicon Power Transistor Switch mode Series This transistor Is designed for high-voltage, power switching In inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for

Contextual Info: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UC3550 CMOS IC PWM CONTROLLED, PWM/PFM SWITCHABLE STEP-UP DC-DC CONTROLLER 4 5 „ DESCRIPTION The UTC UC3550 series is a compact, high efficiency, step-up DC/DC controllers includes an error amplifier, oscillator, PWM comparator, skip cycle comparator, voltage reference, soft-start, and

MJ10000

Abstract: MJ10001 1N4937 voltage regulators 6 amp to3
Contextual Info: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UC3550 CMOS IC PWM CON T ROLLED, PWM /PFM SWI T CH ABLE ST EP-U P DC-DC CON T ROLLER 4 5 ̈ DESCRI PT I ON 3 The UTC UC3550 series is a compact, high efficiency, step-up DC/DC controllers includes an error amplifier, oscillator, PWM

Contextual Info: G EIM IM U M c or por at i Om LA200 Series LA250 mOBM SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction

mj10000

Abstract: MJ10001
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,

2N6191

Abstract: MJE1320 IC 7403 2N5337 AM503 MR856 P6302 frb21
Contextual Info: MOTOROLA Order this document by MJE1320/D SEMICONDUCTOR TECHNICAL DATA MJE1320 Designer's  Data Sheet NPN Silicon Power Transistor Switchmode Series This transistor is designed for high–voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for

inverter in 12v DC to 220v AC 400w circuit diagrams

Abstract: step down chopper tv tube charger circuit diagrams 220v 300w ac regulator circuit 2SC5707 equivalent RD2004 2sc6096 ech8 pattern 2sc5707 Flyback Transformers SANYO TV
Contextual Info: Discrete Devices 2009-5 SANYO Discrete Devices SANYO's environmentally-considered discrete ECoP contributes to the realization of comfortable life in various aspects. Discrete devices and ExPDs power device are environmentally-considered products that well address the needs (small size, low profile, high efficiency & high reliability)

Flyback Transformers SANYO TV

Abstract: RD1004 2SC5707 uhf 150w mosfet 12v bfl4006 2SC5706 equivalent Si sw diode 20V 0.2A SOT323 SSFP package BBS3002 tv tube charger circuit diagrams
Contextual Info: Discrete Devices 2010-8 Mobile Equipment • Application Block ■ Charger [GSM, UMTS] Charger DC-DC Converter / Load SW P3 Down Converter Low end P6 5 to 6V 0.5 to 1A CPU AC Adapter AC Adapter [CDMA2000] Q2 Q3 +B D2 Q1 System AC Adapter RF Block Down Converter (High end)

MTP12N10 pin configuration

Abstract: MTP12N10 P6302
Contextual Info: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJW16010A*  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in

bipolar transistor td tr ts tf

Abstract: AN952 16010a
Contextual Info: MOTOROLA Order this document by MJW16010A/D SEMICONDUCTOR TECHNICAL DATA M JW 16010A * D esigner’s Data Sheet ‘ Motorola Preferred Device NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in

NXP SMD ZENER DIODE MARKING CODE

Abstract: PVR100AZ-B3V3 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 PVR100AZ-B5V0
Contextual Info: PVR100AZ-B series Voltage regulator series Rev. 01 — 16 November 2006 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number PVR100AZ-B2V5 Package

rohm mtbf

Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen­ cies from 1800 to 2000 MHz. The high gain and broadband performance of this

Contextual Info: MOTOROLA Order this document by MJE1320/D SEMICONDUCTOR TECHNICAL DATA M JE1320 D esigner’s Data Sheet NPN Silicon Power Transistor Switchmode Series This transistor is designed for high-voltage, power switching in inductive circuits where RBSOA and breakdown voltage are critical. They are particularly suited for

2N2857

Abstract: 2N2857 JANTXV MRF 110 2N2857 JANTX 2N2857 JAN low noise transistors microwave
Contextual Info: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels

ZHD100

Abstract: zetex t1048 SM-8 Package T1048 pnp npn dual emitter connected motor driver full bridge 10A 100V MH88615 ZDT1048 MOULDED BRIDGES ic siren
Contextual Info: Application Note 24 Issue 2 January 1996 An Introduction to the SM-8 Package Mike Townson Introduction Over recent years the benefits for companies to move to surface mount technology has lead to significant growth in the component industry. The requirements on the component

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

Contextual Info: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA M J10000 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS T he M J1 0 0 0 0 D a rlin g to n tra n s is to r is d e s ig n e d fo r high -v o lta g e , h ig h -s p e e d ,

CMPZ4124

Abstract: CMZ5930B CMZ5945B CMZ5947B Transistor 1602c BC327/transistor bc547 bk 045 CMPZ4618 CMPZ4614 CMZ5948B CMZ5936B
Contextual Info: Small Signal Transistors U.S Specifications Preferred Series SOT-23 Case, 350mW (Continued on next page) b v Ce o b v ebo •SVcES 'CBO VCB *'CEV ® VCE (V) (V) (V) (V) (nA) j MIN M.N MIN MAX 1 hFE @ IC ® VCE (mA) MIN 1 General Purpose Amplifiers/Switches

sot303

Contextual Info: Wfiït mitÍM HP AECWKLAERTDT Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32063 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • Amplifier Tested 900 MHz Performance: 1.3 dB NF,

Contextual Info: General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA 0.9 GHz: 1 dB NF, 15.5 dB GA

PJ 0349

Abstract: PJ 2399 0709s
Contextual Info: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA

AT-41532

Abstract: TRANSISTOR TT 2190 transistor ajw
Contextual Info: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery powered