BH RQ Search Results

Contextual Info: Complete 12-Bit A/D Converters with Programmable Gain ANALOG DEVICES □ AD368/AD369 FEATURES Low Cost Data Acquisition Systems Including: Programmable Gain Instrumentation Amplifier Track-and-Hold Amplifier 12-BH A/D Converter Digitally Controlled Gains:

Contextual Info: KM23C4200B CMOS MASK ROM 4M-BH 512K x 8/256K x 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization Byte Mode: 524,288 x 8 Word Mode: 262,144 x 16 • Fast access time: 120ns (max.) • Supply voltage: single + 5V • Current consumption

Contextual Info: VS Vision Syst em s Gm bH / Part Num ber 664 Fe a t u r e s Can control 1x RS232 devices located virtually anywhere via Ethernet or Internet ● New: Serial port DB9 male ● LAN interface 10BaseT/100BaseTx Ethernet ● Driver automatically finds NetCom devices in the network

KC156A

Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

DXW 06

Contextual Info: &30$ OH 0LFUR $3, ´+DXW GH *DPPHµ /D *DPPH P€…‚ @yrp‡…‚vp† p…pr yr Hvp…‚6QD ´Chˆ‡ qr Bh€€rµ 8r Hvp…‚6QD „ˆv †•hƒƒryyr 8QH!6 p‚€ƒ‚…‡r €hv‡r† h‰h‡htr† „ˆv †‚‡ yh 8‚€ €ˆvph‡v‚ yh 8‚r‘v‚ †ˆ… 7ˆ† qr Ur……hv yr Q…p8hiyhtr yh

6BH7

Abstract: DCWM PR78A 91AB A13A 74g4f diac 8 v 6b p 94 8a7l 6bfp
Contextual Info: 86.-/6 \y+2`dceu] ;9<91AB?5 8978 >=D5? ?5:1E 6IFSTQIR W gah>0 7<8?86GE<6 FGE8A:G; u<?8 }Bamtdfghdj \58GJ88A 6B<? 4A7 6BAG46GF] W w84IL ?B47 HC GB hccc0p W x784? 9BE @BGBE FJ<G6;<A: u<?8 }Bam,llffkcj W 1<G;FG4A7 <AEHF; 6HEE8AG B9 kcp W *rq [ +r ?4LBHGF 4I4<?45?8

TRANSISTOR bH-16

Abstract: TRANSISTOR bH-10 bh16 transistor marking BH SOT-223 BH 16 transistor BH-16 ON bh-16 marking BH-10 BH-16 SOT BH-16 transistor
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

TRANSISTOR bH-16

Abstract: TRANSISTOR bH-10 sot-223 body marking A G Q E bh16 transistor BCP53T1 BH bh-16 transistor with marking BH marking BH SOT-223 bh16 BH 16
Contextual Info: BCP56T1 Series Preferred Devices NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

BH SMD CODE

Abstract: C3317
Contextual Info: SM D Cermet preset potentiometers Series C 04 1F M Ordering code no.: 28 004. Type HC 04 SM / C 4202 Basic design: SMD Technical data Rated resista nce range: R esistance to leran ce: Law resistance taper : Rated d issip a tio n : L im itin g e le m e n t vo ltag e:

Contextual Info: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4953DY

Contextual Info: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching

SI9945

Abstract: Si9945DY
Contextual Info: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Power MOSFET, Fairchild

Abstract: Si9410DY
Contextual Info: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

PASSPORT 6480

Abstract: 5310SA NORTEL PASSPORT 6480 problem solution outline C100 C1600 PASSPORT 6480 oc3 NORTEL PASSPORT 7000 "Phone book" nortel networks passport 6420
Contextual Info: 7HFKQLFDO 6ROXWLRQ /$1 &DPSXV $70 6ROXWLRQV IRU QWHUSULVHV ES-AYSL24001 5-1 This is Module 5 of the LAN Campus ATM end-to-end solution for enterprises. LAN Campus ATM Solutions for Enterprises/Technical Solution 5-1 2EMHFWLYH In this module, you will review the LAN Campus ATM

Power MOSFET, Fairchild

Abstract: Fairchild MOSFET Si4416DY
Contextual Info: Si4416DY* Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4420DY

Abstract: w8 mosfet
Contextual Info: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

MTP2955V

Abstract: transistor W66 WD62 7w66 D665 fairchild mosfets MTP2955V/SSP35n03
Contextual Info: MTP2955V* P-Channel Enhancement Mode Field Effect Transistor Features General Description • -12 A, -60 V. RDS ON = 0.230 Ω @ VGS = -10 V This P-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.

SI9430DY

Contextual Info: Si9430DY* Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

7w66

Abstract: 7121 MOSFET 7121 D665 MTP3055V transistor W66 D666
Contextual Info: MTP3055V N-Channel Enhancement Mode Field Effect Transistor Features General Description • 12 A, 60 V. RDS ON = 0.150 Ω @ VGS = 10 V This N-Channel MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls.

Facon BH 37 933

Abstract: facon bh 39933 BD 37 931 s Facon Bb 37 933 facon bh 37 741 BH 37 933 facon bd 39933 bb 36 931 bj 39933 BB36931
Contextual Info: FACON 4SE T> m 3MSbED3 ODDOGOb T B iF C N 2 3 -O FACON SEMICONDUCTEURS/SEMECONDUCTORS single phase moulded bridges 0,8 Amp to 1,5 Amp ponts m on op h asés m oulés 0,8 Amp à 1,5 Amp V RRM Typos <V V RMS rec o m ­ m ended m ax >d on re ­ s is tiv e lo a d

Si4410DY

Contextual Info: Si4410DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

SI4412DY

Contextual Info: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching