BH ON SEMICONDUCTOR Search Results

Contextual Info: Alphanumeric Type Index SIEMENS Type Ordering Code BH 201 Page Q68000-A8759- F261 143 BH 701 Q68000-A8760- F261 156 BH 704 Q68000-A8761-F261 159 BH 705 Q68000-A8762-F261 162 BH-900 Series on request 164 FH 301-20 Q68000-A8764- F261 146 FH 301-40 Q68000-A8765-F261

philips ferrite core 4b1

Abstract: OM2064 ei ferrite core vHF amplifier DIAGRAM philips ferrite 4b1
Contextual Info: Philips Sem iconductors bb53T31 DDaSHTT bh? Product specification IAPX Hybrid integrated VHF/UHF wideband amplifier OM2064 N AMER PHILIPS/DISCR ETE PINNING DESCRIPTION A three-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended for

Contextual Info: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling

16-Blt

Abstract: b7ah
Contextual Info: O K I Semiconductor MSM531632C : - 1,048,576-Word x 16-BH or 2,097,152-Word x 8-Bit Low-Voltage Mask ROM ' D E S C R IP T IO N w„e,d °“ o o , Ï "d5P* Ï > CM<? M“ k ROM lhat ca" ' ' “ “ “ »'y betweu, 1,048576- 2,097,152-w ord x 8-bit configurations. The MSM531632C operates on a single 3 0 V or

fc4k

Abstract: on4546 BH6410KN BH6410KN-1 BH6410KN-1-2 BH641OKN-1 TSZ22111 TSZ22111-04 ts2022
Contextual Info: PAGE TYPE PRODUCTS 1/19 BH 6 4 1 Q K N SEMICONDUCTOR LSI Model name BH 6 41 0 K N Structure Silicon monolithic; Integration Circuit Product name Audio I/O L SI for Digital still camera Outer dimensions Fig. 1 Plastic mold Block diagram Fig. 2 Measurement circuit diagram

Contextual Info: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4953DY

Contextual Info: Si4953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching

SI9945

Abstract: Si9945DY
Contextual Info: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Power MOSFET, Fairchild

Abstract: Si9410DY
Contextual Info: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si9936DY

Contextual Info: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Power MOSFET, Fairchild

Abstract: Fairchild MOSFET Si4416DY
Contextual Info: Si4416DY* Single N-Channel MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4420DY

Abstract: w8 mosfet
Contextual Info: Si4420DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si9936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

SI9430DY

Contextual Info: Si9430DY* Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si4410DY

Contextual Info: Si4410DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

SI4412DY

Contextual Info: Si4412DY* Single N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si9955DY

Abstract: a6aa Power MOSFET, Fairchild 9a2a bhra
Contextual Info: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

SI4936DY

Abstract: av 66
Contextual Info: Si4936DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Si9953DY

Contextual Info: Si9953DY* Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching

Contextual Info: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching

Si4410DY

Contextual Info: Si4410DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si4410DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

BB515

Abstract: BAND III stabiliser circuit diagram BA282 BB619 S11A S11B SO20 U2329B-AFL usw 334
Contextual Info: U2329B–AFL TELEFUNKEN Semiconductors Gm bH TV-Tuner-IC with Two Separate Oscillators and Mixers, SAW-Driver and Dual-State Band Switch Features D 9 V supply voltage D SAW filter driver with low impedance output D Frequency range from 48 to 860 MHz D Voltage regulator for stable operating characteristics

AW SO-8

Contextual Info: Si9410DY Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching