amplifier 446 mhz
Abstract: BGE85A DIN45004B
Contextual Info: Philips Semiconductors Product specification CATV amplifier module FEATURES BGE85A PINNING - SOT115C • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 • Silicon nitride passivation 2 common • Rugged construction 3 common • TiPtAu metallized crystals ensure
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bge85aot115cdin45004b110asb+1amplifier 446 mhz
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Contextual Info: bbSB^Bl DDBEBBH 75T BIAPX Philips Semiconductors Product specification CATV amplifier module — ——— — BGE85A — FEATURES — N AMER PHILIPS/DISCRETE PINNING - SOT115C PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise
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bge85aot115cdin45004b |
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BGE85A
Abstract: DIN45004B
Contextual Info: ^53^31 Philips Semiconductors GD3E33H 72T IAPX Product specification CATV amplifier module BGE85A N AMER PHILIPS/DISCRETE PINNING -SOT115C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
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gd3233hbge85a-sot115c-60db+1din45004b
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BGE85A
Abstract: DIN45004B
Contextual Info: Product specification Philips Sem iconductors CATV amplifier module BGE85A PINNING -S O T 1 1 5 C FEATURES DESCRIPTION PIN • Excellent linearity 1 input • Silicon nitride passivation 2 common • Rugged construction 3 common • TiPtAu metallized crystals ensure
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pinning-sot115cbge85amsb004-60db+1din45004b
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94
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BGY87
Abstract: BGY580 BGY88 bgy88 PHILIPS
Contextual Info: 71 RF/Microwave Devices CATV Amplifier Modules Type Number Figure dB Composite Triple Beat (dB) max 22 chs21 max @ 200 MHz max @ 10 MHz 13 18.5 22 24 -68 -68 -67 -67 7.0 5.5 5.5 5.5 230 230 230 230 max 60 chs5i max @ 450 MHz max @ 50MHz 230 330 200 240 200
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bgy61bgy65bgy67bgy67a+7ot-11550mhzbge85abgy87bgy580bgy88bgy88 philips
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc
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