BFY 40 Search Results

BFY33

Abstract: BFY34 BFY46 BFY 39 transistor BFY 34 transistor transistor BFY46 BFY 33 transistor N1613
Contextual Info: BFY33, BFY34 2N 1613 ; BFY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application BFY 33, BFY 34 and BFY 46 are d o u b le -d iffu se d planar NPN silicon RF-transistors in a case 5 C 3 DIN 41873 (T O -3 9 ). The co lle cto r is electrically connected to the case.

Contextual Info: BFY 50 • BFY 51 • BFY 52 NPN MEDIUM POWER M - SILICON PLANAR EPITAXIAL TRANSISTOR I\/IIC=:F?<= E L _ E C 3T R C 3 I M I C : S M ECHANICAL OUTLINE FEA TU RES APPLICATIONS • Low S a tu ra tio n V o lta g e V c E . a i ) • • • 0 . 5 V t yp @ I A

bfy50

Abstract: FY51
Contextual Info: M O TO R OL A SC X S T R S /R F 12E D I b3b72S4 aGöbMäS B | BFYSO thru BFY52 M A X IM U M RATINGS R atin g S ym b o l BFY BFY BFY . 50 81 52 U n it C ollector-E m itter Voltage VcEO 35 30 20 Vdc C ollector-Base Voltage VCBO 80 60 40 Vdc E m itter-Base Voltage

BFY50

Abstract: BFY51 BFY50-BFY51 BFY 52 transistor
Contextual Info: BFY 50 BFY 51 BFY 52 SILICON PLANAR NPN M E D IU M -P O W E R A M P L IF IE R S The BFY50, BFY51 and E1FY52 are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are intended fo r general purpose linear and switching applications.

BFY50

Abstract: BFY 50 55x1 BFY51 BFY52 BFY 39
Contextual Info: BFY 50 BFY 51 SILICON PLANAR NPN BFY 52 MEDIUM-POWER AMPLIFIERS The B F Y 5 0 , B F Y 51 and B F Y 5 2 are silico n planar e p ita x ia l NPN tran sisto rs in Jedec T O -3 9 m etal case. T he y are inte nd e d fo r general purpose linear and sw itc h in g a p p lica tio n s.

BFY34

Abstract: BFY33 BFY46 transistor BFY46 BFY 34 transistor BFY 39 transistor BFY 33 transistor N1613
Contextual Info: BFY33, B FY 3 4 2N 1613 ; B FY46 (2N 1711) Not for new developm ent NPN-Transistors for universal RF application B FY 33, BFY 34 and BFY 46 are double-diffused planar N PN silicon R F-transistors in a case 5 C 3 D IN 41873 (TO-39). The collector is electrically connected to thecase.

BFY56

Abstract: BFY56A BFY 56A ft bfy BFY 20
Contextual Info: BFY56 BFY56A SILICON PLANAR NPN A M P L IF IE R S A N D SW ITCHES The BFY 56 and BFY 56A are silicon planar epitaxial NPN transistors in Jedec T O -39 metal case. They are designed fo r am plifier and switching applications over a wide range o f voltage and current.

DN65

Abstract: dbt3 LB830S GB3836 DN40 DN50 BFY 83
Contextual Info: P 普通型 电动浮筒液位变送器 BFY 01 Z 智能型 概述： 概述 BFY－01 系列电动浮筒液位（界面）变送器是国家八﹒五重点科技攻关项目产品，该表是 连续测量液体液位的本质安全型防爆仪表，防爆标志为 iaⅡСΤ（2－5）

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

BFY 94 transistor

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFY 90 • For broadband amplifiers up to 1 GHz and non-saturated switches at collector currents from 1 mA to 20 mA. € CECC-type available: GEGC 50002/253. ESD: Electrostatic discharge sensitive device, observe handling precautions!

A03 transistor

Abstract: Q62702F-1610 BFY193 a03 dbm microwave transistor bfy193 24 marking code transistor K 193 transistor
Contextual Info: HiRel NPN Silicon RF Transistor BFY 193 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, high gain broadband amplifiers up to 2 GHz. ¥ For linear broadband amplifiers ¥ Hermetically sealed microwave package ¥ fT = 8 GHz, F = 2.3 dB at 2 GHz

TFK 351

Abstract: BFY88 BFY 88 tfk 352 tfk 349 BFY 20 Mischstufen BFY 36 transistor Scans-0010448 BFy 90 transistor
Contextual Info: /A \ BFY 880 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: UHF-Verstärker-, Vorstufen in Em itterschaltung S elbstschw ingende M ischstufen in Basisschaltung Applications: UHF a m plifier stages, pre stages in com m on e m itter configuration

BFY45

Abstract: BFY 39 transistor Q60206-Y45 1250-kW transistor BFY45 BFy 90 transistor BFY4
Contextual Info: BFY45 Not for new d e v e lo p m e n t NPN Transistor for lower-pow er switching applications The B F Y 45 is a silicon double-diffused NPN planar transistor in a case 5 C 3 DIN 41873 TO-39 . The collector is electrically connected to the case. The BFY 45 is designed for low power, high voltage switching applications, e.g. for

BFY90

Abstract: Scans-0010548 BFy 90 transistor
Contextual Info: IMPIM-Transistor fü r A n ten n en verstärker B F Y 90 BFY 90 ist ein epitaktischer NPN-Silizium-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 TO-72 . Die Anschlüsse sind vom Gehäuse elektrisch isoliert. Der Transistor ist für allgemeine Anwendungen bis in den GHz-Bereich geeignet z.B. für Antennen- und Hochfrequenz­

BFY56

Abstract: BFY 39 transistor 300S6 BFY56A H21E
Contextual Info: BFY 56 A NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L - General purpose Usage général Dissipation Case TO -39 ~ See outline drawing C8-7 on last pages Variation de dissipation B o îtie r

BFY64

Abstract: transistor BFY64 A 2039 g
Contextual Info: BFY64 SILICON PLANAR PNP H IG H -C U R R E N T G E N E R A L P UR PO SE T R A N S IS T O R The BFY 64 is a silicon planar epitaxial PNP transistor in .Jedec T Q -3 9 metal case. I t is designed fo r digital and analog applications at current levels up to 500 m A , line driver,

40250

Abstract: LB801R LB801 iact
Contextual Info: BFY-02 系列电动浮球液位变送器 概述： 概述 BFYBFY-02 系列电动浮球液位变送器是 DDZ－Ⅲ型电动单元组 合仪表中的 一个变送单元。它采用 4～20mADC 标准二线制传输 方式，它具有结构简单调试方便、可靠性好、精度高、体积小

bs33

Abstract: 35-130 BSS 130 BSS 97 BFR20 BFR21 BFX39 BFX95A BFX97A BFY56
Contextual Info: PROFESSIONAL TRANSISTORS > _1 ro E UJ lL JZ. W U mA < £ _u > PACKAGE >» ~c > ia lc RANGE TYPE an d Q. uoJ UJ o (SU ) 'H i E > (SU) P O L A R IT Y General purpose switches BFR20 BFR21 NPN 35 _ 130 450 90/250 0.13 150 0.1-1000 T O -39 NPN 70 - 130 450 40/70

BFX97A

Abstract: BFR11 BFR20 BFR21 BFX39 BFX94A BFX95A BFX96A BSX19 bsx30
Contextual Info: PROFESSIONAL TRANSISTORS continued a. C o >* ~e E —I LU Ü. x: _ B F R 10 NPN 40 BFR11 BFX94A NPN NPN 40 30 - BFX95A BFX96A BFX97A BSS 26 BSV 15 BSV 16 BSV 59 BSV 77 BSV 89 BSV 90 BSV 91 BSV 92 BSV 95 BSX12 BSX 19 BSX 20 BSX 26 BSX 27 BSX 28 BSX 29 BSX 30

BF441

Abstract: BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509 BFS20 BFS62
Contextual Info: RF transistors Type Structure Silicon transistors Fifl. Nr. Maximum ratings Characteristics A c t a* I q anc ^CE V mA f j at MHz 48-167 1 10 a 27 4 10 7 a 38 67-220 1 36-125 1 10 30 25 £27 40 40 c iire a UCB V PF 230 1 0.65 10 350 4 0.15 10 550 260 200 5

bss17

Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN

bfy 40

Abstract: STM 64 butterfly 7 pin GPO 80 Km upc 577 NX8560LJ NX8560MC NX8560MCS NX8560SJ NX8564LE stm 64 laser diode 19pin NX8566LE
Contextual Info: PRELIMINARY DATA SHEET LASER DIODE NX8560SJ Series EA MODULATOR AND WAVELENGTH MONITOR INTEGRATED 1 550 nm MQW-DFB LASER DIODE MODULE FOR 10 Gb/s APPLICATIONS DESCRIPTION The NX8560SJ Series is an Electro-Absorption EA modulator and wavelength monitor integrated, 1 550 nm Multiple Quantum Well (MQW)

UOJ 220

Abstract: BFR18 bfx74a BFR16 BFW43 BFW44 BFX38 BFX39 BFX40 BFX41
Contextual Info: 01 — - — — — — - 051? 051? 081? 081? 081? 03£ 0Z£ 081? 081? OOZ 003 005 009 90 OQL 09 L 99 99 99 — — — — 00 00 00 00 00 L 001 — 98 98 98 817 — 817 98 98 91 91 OZ OZ g n n L L L 9 9 91 10 01 8L 8L 91 91 91 9L 9 9 01 01 9ZL ZL 9'0 90

tfk 339

Abstract: tfk 337 BFY 39 transistor BFY56 bfy56a BEsat11 BFY 20
Contextual Info: Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Allgem ein, V erstärker und Schalter Applications: General, am plifiers and switches Abmessungen in mm Dimensions in mm K o llektor m it Gehäuse verbunden C o lle cto r co n n ecte d with case