BFX89
Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23shqsq62702-f2962js41wbfx89+4transistor bfx 90bfx 514q 371 transistor2sc 684
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BFX60
Abstract: Transistor BFX 90 bfx 63 Q60206-X60
Contextual Info: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge häuse elektrisch isoliert.
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bfx60q60206-x60transistor bfx 90bfx 63 |
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Transistor BFX 90
Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23shqsq62702-f296transistor bfx 90transistor bfx 73+3bfx 514bfx89b 514 transistor
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BFX60
Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Contextual Info: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier
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bfx60q60206-xp21e510z5+2bfx 63transistor for rf amplifier
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SO-104
Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
Contextual Info: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5
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blw11o-131o-129o-117+9so-104blw 30 or bfw 30blw21bly 67bly-38bly34bly 55bly 63bly87
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3004x
Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23sbos0g04737bfx55q60206-x55+9fl235bos3004xtransistor bfx 59634 transistorbfx 6363310-ad-10transistor bfx 90bfx 79
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3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23sbos0g04737q60206-x55bfx55+1023sbos150ma3004xsiemens b 58 451ge 639 transistor2114dtransistor bfx 73static ram 2114q2114tic 2116 m
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CJW SOT-23
Abstract: bfq 85 LS 1316 BFP91 BFT50 BFX89 pin configuration BFW 11
Contextual Info: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89
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cb-71o-11/o-117cb-233+7bfp91cjw sot-23bfq 85ls 1316bft50bfx89pin configuration bfw 11
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S0642
Abstract: pin configuration BFW 11 BF520 BF519 BF654 BFP91 BFR92A BFS17 BFT50 BFX89
Contextual Info: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89
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cb-71o-11/o-117bfr92a+13bfh93abfs18bfs19bf654bfs20s0642pin configuration bfw 11bf520bf519bfp91bfs17bft50bfx89
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BFX97A
Abstract: BFR11 BFR20 BFR21 BFX39 BFX94A BFX95A BFX96A BSX19 bsx30
Contextual Info: PROFESSIONAL TRANSISTORS continued a. C o >* ~e E —I LU Ü. x: _ B F R 10 NPN 40 BFR11 BFX94A NPN NPN 40 30 - BFX95A BFX96A BFX97A BSS 26 BSV 15 BSV 16 BSV 59 BSV 77 BSV 89 BSV 90 BSV 91 BSV 92 BSV 95 BSX12 BSX 19 BSX 20 BSX 26 BSX 27 BSX 28 BSX 29 BSX 30
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es33abfr11bfx94abfx95a+10bfx96abfx97aoto-3915/2n16/2nbfr20bfr21bfx39bsx19bsx30
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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hbf4727azd 607 - triaczd 607 - triac circuithbf 4727a+6tda3310hbf4727hbf4740dtl-9307-stage frequency dividerbf479s
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BC137
Abstract: bc116 BC 287 BC221 bc126 BC 461-5 bc327 850mW BC116A BC 143
Contextual Info: General Purpo/e Tron/i/tor/ T 0 -I0 5 TO -5 e Electrical Characteristics @ Maxim um Ratings r o « 25 C ' N T Y P E NO. Pd •c b v c bo l v c eo b v ebo PN P hp E @ V c e @ l c BC BC BC BC BC 116 116A 126 137 139 300m W 300m W 300m W 300m W 700m W 600m A
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t0-i05300mw600ma150ma+12200mhzo-105bc137bc116bc 287bc221bc126bc 461-5bc327850mwbc116abc 143
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BFY76
Abstract: 2N930 BCY58 BCY59 BFX41 2N4033
Contextual Info: r=7 SGS-THOMSON 1 MOtgiOEtLKBir^QRilOOi GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS PNP GENERAL PURPOSE TRANSISTORS - TO 39 v CEO hFE min/max «$ Type >c mA (V) v CE(sat) max î* lcflB (V) »T min *s Ptot (mA) (MHz) ‘off* (ns) (mW) 55 85/—
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bfx412n930bfy76bcy59+2bcy582n4033
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2sd 5023
Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
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-26unf-2ao-48d2sd 5023transistor bc 945+82sc 9012bc 9013transistor bc 8559416atransistor bc345bfy41bcx 388bc 945
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transistor BC 584
Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
Contextual Info: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4
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bdt17flao-92fto-02melf-002+10transistor bc 584transistor bc 456transistor bc 585transistor bc 583d 92 02 78.pbfw 10 fettransistor bfx 41transistor bc 416 bbc583transistor bc 548
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1.0 k mef 250
Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a
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semi-820byx22-400byx22-600byx22-800+14byx26-60yx26-150byx36-1byx36-3001.0 k mef 250me4003me4002ma0411transistor me6101transistor bc 172b2n2959transistor bf 1752n51732n3072
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2N5859
Abstract: 2N5861 bc140 BC441 transistor BD115 BFW16A 2N5784 2N5785 2N5786 2N6190
Contextual Info: Small Signal Transistors TO-39 Case Continued T Y P E NO. D E S C R IP T IO N v CBO (V ) v C EO V e (V) b h :E O • C BO @ V C B O <V) (HA) (V ) @ IC @ vCE <mA) (V) VC E (S A T ) @ lc (V ) (m A ) *'C E O *VC E R *T c ob ton *off NF (MHz) (pF> (ns) (ns)
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2n57842n57852n57862n5859+102n5861bfs95bft28cbfw16abfw44bfx34bc140bc441 transistorbd1152n6190
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DG TEEK
Abstract: 4lgj roe EYF 50E71
Contextual Info: WNZPVPW\LU e433VV @XUUX_ JSLQ\ KaYP <TLVP\PZ e433VV @XUUX_ [SLQ\ \aYP WNZPVPW\LU IX\LZa PWNXOPZ d>PL\]ZP[ _+J>:L >FNBJGFE>FL:D J>KBKL:F<> _,B@A KL:;BDBLQ G? GMLHML _4H><B:DDQ MKBF@ BF *D>N:LGJ , /:0 KTVPZ HUPL[P ZPLO -;L]\TXW QXZ aX]Z [LQP\a- TW XYPZL\TXW
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e433vvfy24myib45057qba50e717+4dg teek4lgjroe eyf50e71
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AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
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76665n76889nma748pcma709pc+16ja710pca711pcia712pca723pcha741pca747pcac125k6an7tungsram 3s035t-1ecc83 application notesecl86dg 7-123tungsramac125uzpentode pl 508ot-400 tungsram
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pin configuration BFW 11
Abstract: BF063 BFP96 2N3570 BFP90A bfq 85 BFP91 BFT50 BFX89 2N5109
Contextual Info: 1. 1000 MHz C LA S S A LOW NOISE FOR SM ALL SIG N AL APPLICATIO NS Typ« I Pockog* ptot V B R C EO m ax. m in. (m W ) (V ) fr @ (M Hz) |m A ) C 22b* (pf) (V ) UM* (^B) (m A) > 15 6 g N TO-72 200 15 > 600 4 < 1,7* 10 2N 3570 2N 357) 2N 3572 N N N TO-72
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bfx89bft50cb-233bfp91+7pin configuration bfw 11bf063bfp962n3570bfp90abfq 852n5109
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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kt 819 transistor2n2222a 338sf129dsf137d+6ssy20bkt819wsf127ekfy18 321kp303wkfy18
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lm3i7
Abstract: BFD22 ic LM7812 LM3I7-220M Lti086 pi38a 2N3904D LM7924 BFD48 BYVI43-35M
Contextual Info: MilitaryAerospace Division C eram ic surface m ount devices and herm etic m etal packages T h e following L C C 2 - p a c k a g e d devices have been specifically designed to accommodate dual LCC2 4p LCC3 M edium -pow er L C C Hi Sir T Ó 63 ♦ T O I II Page 24
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in4001csmuin4003csmd60dcsm222ia+162n2221dcsm2n2222adcsm2n2222dcsm2n2369adcsm2n2453d2n2639dcsmlm3i7bfd22ic lm7812lm3i7-220mlti086pi38a2n3904dlm7924bfd48byvi43-35m
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BC639 18
Abstract: 2N929 2N930 BCW60 BCW61 BCX70 BCX71 BCY58 BCY59 BCY72
Contextual Info: AF transistors Continued Type Group Structure FigNr. Maximum ratings C h aracteristics ^tot at 7C mA ^CEO V fj at MHz 7C mA af e at /q and LU 'am b = +45° c W mA F at dB / kHz BC 635 NPN 27 1.06) 1000 45 50 50 40-250 150 2 - - BC 636 PNP 27 1.06) 1000 45
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bcw60bcw61bc639 182n929+62n930bcx70bcx71bcy58bcy59bcy72
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129 gez
Abstract: SMCJ170A
Contextual Info: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic
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smcj26casmcj28casmcj30casmcj33ca+8smcj36casmcj40casmcj43casmcj45casmcj48casmcj51ca129 gezsmcj170a
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