BFX60
Abstract: Transistor BFX 90 bfx 63 Q60206-X60
Contextual Info: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge häuse elektrisch isoliert.
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BFX60
Q60206-X60
Transistor BFX 90
bfx 63
Q60206-X60
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Transistor BFX 90
Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general
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23ShQS
Q62702-F296
Transistor BFX 90
transistor bfx 73
BFX 514
BFX89
b 514 transistor
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BFX60
Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
Contextual Info: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier
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BFX60
BFX60
Q60206-X
p21e
510Z5
bfx 63
transistor for RF amplifier
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SO-104
Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
Contextual Info: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5
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BLW11
O-131
O-129
O-117
SO-104
blw 30 or bfw 30
BLW21
BLY 67
BLY-38
BLY34
bly 55
bly 63
BLY87
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3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
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fl23SbOS
0G04737
Q60206-X55
BFX55
23SbOS
150mA
3004x
SIEMENS B 58 451
GE 639 transistor
2114D
transistor bfx 73
STATIC RAM 2114
Q2114
tic 2116 M
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CJW SOT-23
Abstract: bfq 85 LS 1316 BFP91 BFT50 BFX89 pin configuration BFW 11
Contextual Info: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89
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CB-71
O-11/'
O-117
CB-233
BFP91*
CB-233
CJW SOT-23
bfq 85
LS 1316
BFP91
BFT50
BFX89
pin configuration BFW 11
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S0642
Abstract: pin configuration BFW 11 BF520 BF519 BF654 BFP91 BFR92A BFS17 BFT50 BFX89
Contextual Info: 40. 900 MHz Packagi» V B R C E O min. ff @ *C (V) (M H z) (m A) 15 15 > 1300 25 c 12* NF ft lc / f Veut 'M O CMD (M H z) (m V) (dB) (dB) c 22b* (pF) (dB) (m A) S S 1 I Typ*» Polarity j C L A S S A LIN EA R FOR C A T V /M A T V A P P L IC A T IO N S BFX 89
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CB-71
O-11/'
O-117
BFR92A
BFH93A
BFS18
BFS19
BF654
BFS20
S0642
pin configuration BFW 11
BF520
BF519
BF654
BFP91
BFR92A
BFS17
BFT50
BFX89
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BFX97A
Abstract: BFR11 BFR20 BFR21 BFX39 BFX94A BFX95A BFX96A BSX19 bsx30
Contextual Info: PROFESSIONAL TRANSISTORS continued a. C o >* ~e E —I LU Ü. x: _ B F R 10 NPN 40 BFR11 BFX94A NPN NPN 40 30 - BFX95A BFX96A BFX97A BSS 26 BSV 15 BSV 16 BSV 59 BSV 77 BSV 89 BSV 90 BSV 91 BSV 92 BSV 95 BSX12 BSX 19 BSX 20 BSX 26 BSX 27 BSX 28 BSX 29 BSX 30
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ES33A
BFR11
BFX94A
BFX95A
BFX96A
BFX97A
OTO-39
15/2N
16/2N
BFR20
BFR21
BFX39
BSX19
bsx30
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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BC137
Abstract: bc116 BC 287 BC221 bc126 BC 461-5 bc327 850mW BC116A BC 143
Contextual Info: General Purpo/e Tron/i/tor/ T 0 -I0 5 TO -5 e Electrical Characteristics @ Maxim um Ratings r o « 25 C ' N T Y P E NO. Pd •c b v c bo l v c eo b v ebo PN P hp E @ V c e @ l c BC BC BC BC BC 116 116A 126 137 139 300m W 300m W 300m W 300m W 700m W 600m A
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T0-I05
300mW
600mA
150mA
200MHz
O-105
BC137
bc116
BC 287
BC221
bc126
BC 461-5
bc327
850mW
BC116A
BC 143
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BFY76
Abstract: 2N930 BCY58 BCY59 BFX41 2N4033
Contextual Info: r=7 SGS-THOMSON 1 MOtgiOEtLKBir^QRilOOi GENERAL PURPOSE & INDUSTRIAL SMALL SIGNAL TRANSISTORS PNP GENERAL PURPOSE TRANSISTORS - TO 39 v CEO hFE min/max «$ Type >c mA (V) v CE(sat) max î* lcflB (V) »T min *s Ptot (mA) (MHz) ‘off* (ns) (mW) 55 85/—
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BFX41
2N930
BFY76
BCY59
BCY58
BCY58
2N4033
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2sd 5023
Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
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-26UNF-2A
O-48D
2sd 5023
transistor BC 945
2SC 9012
bc 9013
transistor bc 855
9416A
Transistor BC345
BFY41
bcx 388
BC 945
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transistor BC 584
Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
Contextual Info: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4
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bDT17fla
O-92F
to-02
melf-002.
transistor BC 584
TRANSISTOR BC 456
Transistor BC 585
transistor BC 583
D 92 02 78.P
BFW 10 fet
Transistor BFX 41
TRANSISTOR BC 416 b
BC583
transistor BC 548
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DG TEEK
Abstract: 4lgj roe EYF 50E71
Contextual Info: WNZPVPW\LU e433VV @XUUX_ JSLQ\ KaYP <TLVP\PZ e433VV @XUUX_ [SLQ\ \aYP WNZPVPW\LU IX\LZa PWNXOPZ d>PL\]ZP[ _+J>:L >FNBJGFE>FL:D J>KBKL:F<> _,B@A KL:;BDBLQ G? GMLHML _4H><B:DDQ MKBF@ BF *D>N:LGJ , /:0 KTVPZ HUPL[P ZPLO -;L]\TXW QXZ aX]Z [LQP\a- TW XYPZL\TXW
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e433VV
fY24MYib
45057QBA
50e717
DG TEEK
4lgj
roe EYF
50E71
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pin configuration BFW 11
Abstract: BF063 BFP96 2N3570 BFP90A bfq 85 BFP91 BFT50 BFX89 2N5109
Contextual Info: 1. 1000 MHz C LA S S A LOW NOISE FOR SM ALL SIG N AL APPLICATIO NS Typ« I Pockog* ptot V B R C EO m ax. m in. (m W ) (V ) fr @ (M Hz) |m A ) C 22b* (pf) (V ) UM* (^B) (m A) > 15 6 g N TO-72 200 15 > 600 4 < 1,7* 10 2N 3570 2N 357) 2N 3572 N N N TO-72
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BFX89
BFT50
CB-233
BFP91*
CB-233
pin configuration BFW 11
BF063
BFP96
2N3570
BFP90A
bfq 85
BFP91
2N5109
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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BC639 18
Abstract: 2N929 2N930 BCW60 BCW61 BCX70 BCX71 BCY58 BCY59 BCY72
Contextual Info: AF transistors Continued Type Group Structure FigNr. Maximum ratings C h aracteristics ^tot at 7C mA ^CEO V fj at MHz 7C mA af e at /q and LU 'am b = +45° c W mA F at dB / kHz BC 635 NPN 27 1.06) 1000 45 50 50 40-250 150 2 - - BC 636 PNP 27 1.06) 1000 45
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BCW60
BCW61
BC639 18
2N929
2N930
BCX70
BCX71
BCY58
BCY59
BCY72
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129 gez
Abstract: SMCJ170A
Contextual Info: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic
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SMCJ26CA
SMCJ28CA
SMCJ30CA
SMCJ33CA
SMCJ36CA
SMCJ40CA
SMCJ43CA
SMCJ45CA
SMCJ48CA
SMCJ51CA
129 gez
SMCJ170A
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BLY78
Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
Contextual Info: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V
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BLW12
O-117
T0-60CE
S0-104
SO-104
BLY78
BLY87
bly91
BLY93A
TRANSISTOR BFW 11
Transistor BFX 90
BLY34
BLW12
BLY91A
BLY53
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blw 30 or bfw 30
Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
Contextual Info: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V
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O-117
O-117
T0-60CE
S0-104
SO-104
blw 30 or bfw 30
TRANSISTOR BFW 11
BLY83
BLY78
bly91
BLY-38
BLW11
blw 93
BLY76
BLY53
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BLY93A
Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
Contextual Info: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V
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BLW23
8/32-UNC-2A-Thread
O-117
O-117
T0-60CE
S0-104
SO-104
BLY93A
BLY78
BLY34
BLY97A
BLY-38
BLW11
BLY91
BLW25
BLW19
bly 63
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BLW24
Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
Contextual Info: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V
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BLW24
O-1175
O-117
T0-60CE
S0-104
SO-104
BLW24
BLY38
BLY88
bly91
BLY-38
BLX66
bly power transistor
TRANSISTOR BFW 16
BLY36
Transistor BFw 92
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BLW20
Abstract: TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A
Contextual Info: BLW20 SIL IC O N NPN V H F POWER T R A N SIST O R 873 HUGH GAIN OUTPUT FOR 13 V FM APPLICATIONS « » » 25 W at 175 MHz Designed to withstand all VSWR at Rated Output Distributed Construction mechanical data absolute maximum ratings Tease93 25 °C Collector-Base V o lta g e . 36 V
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BLW20
32-UNC-2A-Thread
O-117
T0-60CE
S0-104
SO-104
BLW20
TRANSISTOR BFW 16
BLW24
BLW19
BLW11
BLX67
BLY93A
bly91
61 TRANSISTOR
BLY53A
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BUY69
Abstract: bu137 transistor t03 BU108 BC326 BU500 bu137a F011 transistor bcy79 equivalent 2s026
Contextual Info: Metal Can Power H igh V o lta g e 200-1500 V o lts Vce Case Outlines «- *4* •* + r] •U i -0 - 2 3 - “ 6-6-4- — 38 05 min - D im ensions in mm TO-5 9 1 Constn. V C B O V Outline IC Pk A IC d.c. A PTO T 200 6 250 300 400 6 4 4 4 4 50 50 50 50 10 100
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0-400I
BD253
BD253A
BD253B
BFX84
BFX85
BFX86
BCY78
BCY79
BCY58
BUY69
bu137
transistor t03
BU108
BC326
BU500
bu137a
F011 transistor
bcy79 equivalent
2s026
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