BFW 100 TRANSISTOR Search Results

TRANSISTOR BFW 11

Abstract: BFW93 C11B
Contextual Info: BFW 93 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L VHF-UHF applications. Wide band aerial amplifiers Applications VHF-UHF. Am plificateurs fantenne & large bands V CEO 10 V 'c m 100 mA h2iE<!30 mA 25 f j ( 5 0 imA)

GL+7837

Contextual Info: Gl BDE T> • 7*12*1237 QQBD'ib'i 1 H M vi>K¿.3 BFW 16A BFW 17A S C S - T H O M S O N lu í * ® s G S-THOMSON CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter sili­ con planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation

BFW17A

Abstract: BFW transistors BFW 100 BFW16A transistors BFW16A bfw16a-bfw17a bfw1 bfw 11
Contextual Info: BFW16A BFW17A CATV-MATV AMPLIFIERS DESCRIPTION The BFW 16A and BFW 17A are multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily intended for final and driver stages in channel-and

BFW16A

Abstract: 16ab BFW17A
Contextual Info: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS BFW16A BFW17A CATV-MATV AMPLIFIERS D E S C R IP T IO N The BFW 16Aand BFW 17Aare multi-emitter silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, with extremely good intermodulation properties and high power gain. They are primarily

BFW92

Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
Contextual Info: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,

Transistor BFR 96

Abstract: BFR 30 transistor Transistor BFR 35 BFT95 bfx19 bsx30 BFR 80 BFW17A BFR10 BFR36
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X < o LU U_ .£= BFR10 N PN N PN BFR 11 NPIM B F R 36 BFR 37 N PN BFR 38 PNP BFR 90* NPN N PN BFR 91* B F R 96* N PN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN PNP

bss17

Abstract: BFY 99 Transistor BFR 30 BFR 30 transistor BFR 450 BFY 93 bfx 63 bfw 96 Transistor BFR 96 BFX97
Contextual Info: PROFESSIONAL TRANSISTORS continued m u > (s (5) \ œ œ •Q -a o ex. Ll_ z r i o £3. > < e X CO < E o 'i LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 BFR 37 NPN BFR 38 PNP BFR 90* NPN NPN BFR 91* B F R 96* NPN BFR9 7 /2N 3866 NPN B F R 98/2N 4427 NPN

TRANSISTOR BFW 11

Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
Contextual Info: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use

Transistor BFw 92

Abstract: TRANSISTOR BFW 11 BFW92 bfw glass bfw 10 transistor BFw 92 NPN planar RF transistor bfw 11 bfw 30 transistor BFW 42 transistor
Contextual Info: BFW 92 "W Silizium-NPN-Planar-HF-Transistor Silicon NPN Planar RF Transistor Anwendungen: Hochfrequenzverstärker bis in den GHz-Bereich Applications: RF-amplifier up to G Hz range Besondere Merkmale: Features: • Hohe Leistungsverstärkung • High pow er gain

bfw44

Abstract: BFW43 BFW transistors BFw 94
Contextual Info: BFW43 BFW44 HIGH VOLTAGE AMPLIFIERS DESCRIPTION The BFW43 and BFW44 are silicon planar epitaxial PNP transistors in Jedec TO-18 BFW43 and Jedec TO-39 (BFW44) metal cases. Both devices are designed for use in amplifiers where high voltage and high gain are necessary. In

BFR 450

Abstract: BFW64 tpl 550 BFW17A BFR38 BFW63 BFX19 BFT95H BFR36 BFR96
Contextual Info: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95

BFR 450

Abstract: BFR36 BFY 93 bft95 BFw 94 BFR10 BFR96 BFT95H BFW16A BFW17A
Contextual Info: PROFESSIONAL TRANSISTORS continued ex. (5) (s \ œ •Q o œ -a Ll_ z £3. > 'i < o LU U_ .£= BFR10 NPN NPN BFR 11 NPIM B F R 36 B FR 37 NPN B FR 38 PNP BFR 90* NPN NPN B FR 91* B F R 96* NPN BF R97/2N 3866 NPN B F R 98/2N 4427 NPN PNP BFR 99 PNP BFT95

BFW30

Abstract: bfw 10 transistor bfw 30 transistor transistor BFW 10
Contextual Info: BFW 30 NPN Silicon planar RF transistor BFW 30 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 TO-72 , designed for universal application up into the GH z range, e.g. for vertical amplifiers in broadband oscillographs and for broadband antenna amplifiers. Terminals

bfw44

Abstract: BFW43 BFW transistors
Contextual Info: 3QE D • 7121237 QDBQTTB D ■ Ì Eu SGS-THOMSON ^I TO «S BFW43 BFW44 S G S-THOMSON HIGH VOLTAGE AMPLIFIERS DESCRIPTIO N T h e B F W 43 and B F W 44 a re silicon planar epitaxial P N P transistors in Jedec T O -1 8 B F W 4 3 and Jede c T O -3 9 (B F W 4 4) m etal cases.

bfw 106 c

Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
Contextual Info: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for

BFW92

Abstract: BFW92A
Contextual Info: 1 ?, BFW 92, B FW 92A W ideband N-P-N bipolar silicon R F transistors 02* t , k . 1.2 i T P in o u ts : 1 -B a se , 2- C o lle c to r, ”4 .Î Q .S T ra n s is to r is d e s ig n e d fo r a p p lic a tio n in s a te llite c o m m u n ic a tio n s y s te m s ,

BFW93

Abstract: transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60
Contextual Info: I ESC D • 053SbOS 0 0 0 4 7 3 4 2 ■ S I E û NPN Silicon RF Broadband Transistor design SIEMENS A K T I E N ô E S E L L S C H A F D Not for new CAI BFW 93 -3 1 -1 5 BFW 9 3 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance,

TRANSISTOR b 772 p

Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
Contextual Info: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for

BFW92

Contextual Info: SIEMENS BFW 92 NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFW 92 BFW 92 Q62702-F321 Pin Configuration

Contextual Info: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers

Q62702-F320

Abstract: BFW 72
Contextual Info: N P IM -S iliz iu m -P la n a r-H F -T ra n sisto r B F W 30 BFW 30 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 TO-72 für allgemeine Verwendung bis in den GHz-Bereich, z.B. für Vertikal­ verstärker in Breitband-Oszillografen und für Breitband-Antennenverstärker. Die Anschlüsse

Transistor BFw 92

Abstract: TRANSISTOR BFW 11 BFW92 transistor bfw 88 BFw 94
Contextual Info: BFW 92 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92 Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings

BFW16A

Abstract: bfw16 transistor bfw16a BFW 16
Contextual Info: BFW 16 A NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR , TRANSISTOR NPN SILIC IU M PLANAR EPITAXIAL Final stage of the wide band vertical amplifier in high speed osciloscope Etage de sortie du balayage vertical large bande pour oscilloscopes rapides v CEO 25 V

BFW16A

Abstract: TRANSISTOR BFW 16 Q62702-F319
Contextual Info: N P IS I-S iliz iu m -P la n a r-H F -T ra n sisto r BFW 16A BFW 16 A ist ein epitaktischer NPN-Silizium -Planar-HF-Transistor im Gehäuse 5 C3 DIN 41873 T O -39 für allgemeine Verwendung bis in den GHz-Bereich z. B. für Treiber- und Endstufen von Kanal- und Bereichsantennenverstärkern bis Bereich V, sowie für Vertikalverstärker-Endstufen in Breitband-Oszillografen. Der Kollektor ist mit dem Gehäuse leitend