BFCIS3T31 Search Results

Contextual Info: • bbS3^3i o o a ^ A i f ao? h a p x BLW29 N AnER p h i l i p s / j i s c r e t e blE I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage of 13,5 V. Because of the high gain and excellent power

BDS61A

Abstract: smd npn darlington BDS61 BDS61B Darlington NPN Silicon Diode BDS61C smd diode LC 61 SMD 547 DIODE
Contextual Info: Philip» Comportants Datasheet status Product specification data of issue Apr* 1991 BDS 6 1 /6 1 A /6 1 B /6 1 C NPN Silicon Darlington power transistors DESCRIPTIO N PINNING - SOT223 DESCRIPTIO N base collector emitter collector PIN 1 2 3 4 NPN Silicon power transistors in a

optocoupler 4N25 VDE

Abstract: a4n25 4N25 A4N25A 4N25A 4N26 4N27 4N28 sot90b optocoupler 4n25
Contextual Info: 4N25 4N25A 4N26 4N27 4N28 TO Æ J OPTOCOUPLERS V- T h is p ro d u c t range is o n e o f th e indu strial standards ap plied in th e m arket. T he current transfer ratio, iso la tio n voltage and lo w saturation voltage c o m p ly w ith th e sp e cifica tio n s o f th e m ain part o f the

Contextual Info: N APIER PHILIPS/DISCRETE DbE D PowerMOS transistor • bLSaiBl QQ14fl01 5 ■ BUZ307 t -s t -u May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies