BFC MARKING Search Results

bcf 30

Contextual Info: BCF 29, BFC 30 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse

BCF32

Abstract: BCF33 sot-23 marking code Ks BFc marking
Contextual Info: BCF 32, BFC 33 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code 2 1 250 mW Plastic case Kunststoffgehäuse

Contextual Info: I I N AMER PHILIPS/DISCRETE MAINTENANCE TYPE DbE D bfc.53el31 00150 43 5 • J M06075B200Z T - ^ 3 - IM­ PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended fo r use in military and professional applications. It operates only in pulsed conditions and is recommended fo r IFF applications.

ASK transmitter and receiver pair

Abstract: circuit diagram of rf transmitter and receiver 26C198 SC26C198 SC26C198A1A SC26C198C1A
Contextual Info: • bfc.53*124 0 M 4 3 C n b?3 « S I C 3 Philips Semiconductors Data Communications Products Preliminary specification Octal universal asynchronous receiver/transmitter UART DESCRIPTION SC26C198 • Sixteen byte receiver FIFOs for each UART The Philips 26C198 Octal UART Is a single chip CMOS-LSI

pmwy

Abstract: QML-38535 93c566 smd marking wds 4431a 93CS66
Contextual Info: REVISIONS LTR OeSCMPTION DATE vn-MO-DA APPROVED REV SHEET REV SHEET 26 REV 8TATUS OF 8HEET8 27 28 ¿ 2. REV SHEET 10 11 12 13 14 15 16 17 1i IS 2C 21 PMC N/A STANDARDIZED MILITARY DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 "HICROCIRC U n ^ 'HEHOHV, lilial IAL, LHUSi bfc

DIODE 1N5822

Abstract: marking RAV SOD84A 1N5821 diode schottky 1N5822 n5822 1N58 1N5820 1N5822 diode Philips 370
Contextual Info: Philips Semiconductors M bfc.5 3 ^ 3 1 □ □ E b c1 3 L4 • APX Controlled avalanche Schottky barrier d iod es 1N5820ID/21ID/22ID n D E S C R IP T IO N Schottky barrier d io d es in herm etically se a led S O D 8 4 A Implosion D iode ID envelope, intended for use in low output

Contextual Info: N AMER PHILIPS/DISCRETE bTE D bfc.53131 002 ^ 3 4 T37 APX Philips Components 1 N 5 8 1 7 /1 N 5 8 1 8 /1 N 5 8 1 9 D a ta s h e e t s ta tu s Preliminary specification d a te o f is s u e F e b ru a ry 1 99 0 Schottky barrier diodes DESCRIPTION Schottky barrier diodes in hermetic­

M12-A

Abstract: RD30 99-9208-00-03
Contextual Info: TI Ü Snap-in Steckverbinder IP67 Snap-in connectors IP67 Kabelsteckverbinder • Steckverbinder mit Schnappverriegelung • Schutzart IP67 1 • Innenliegende Zugentlastung • Einfache Montage RD24 M25 Bajonett M23 M16 IP67 M16 IP40 PP IP67 Bajonett SI IP67

M12-A

Abstract: RD30 99-9128-00-08 m23 connector male
Contextual Info: TI Ü Snap-in Steckverbinder IP 67 Snap-in connectors IP 67 Kabelsteckverbinder • Steckverbinder mit Schnappverriegelung • Schutzart IP67 1 • Innenliegende Zugentlastung • Einfache Montage • Versionen mit Farbkodierung RD30 RD24 M25 Bajonett M23

connector pin contact

Abstract: M12-A RD30 99-9208-00-03
Contextual Info: TI Ü Snap-in Steckverbinder IP67 Snap-in connectors IP67 Kabelsteckverbinder • Steckverbinder mit Schnappverriegelung • Schutzart IP67 1 • Innenliegende Zugentlastung • Einfache Montage RD24 M25 Bajonett M23 M16 IP67 M16 IP40 PP IP67 Bajonett SI IP67

SI 4606

Abstract: M23X1 diode MARKING M16 4634 M12-A RD30 M2310
Contextual Info: TI Ü M23 Steckverbinder IP67 M23 connectors IP67 Kabelsteckverbinder • Steckverbinder mit Schraubverriegelung • Schutzart IP67 1 • Schirmbare und nicht schirmbare Ausführungen • Metallbauweise • M23 Gewinde RD30 RD24 M25 Bajonett M23 M16 IP67 M16 IP40 PP IP67 Bajonett SI IP67

Contextual Info: \ D H 8 IO THtS DRAWING AND DESIGN HEREON CONSTITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO 8E DUPUCATED OR RE­ PRODUCED WTTHOUT AUTKORiTY OF PACKARD ELECTRIC DIVISION. DO NOT SCALE m Ttr-itr I n CVJ o U q 5 1 3 LO C sl [I : i i S 3i i

Contextual Info: N AflER PHILIPS/DISCRETE b'lE D • bbS3131 DOEblUS 4Q4 « A P X BA223 SILICON A.M. BAND SWITCHING DIODE The BA223 is a switching diode in whiskerless glass encapsulation. It is intended for band switching in a.m. radio receivers. QUICK REFERENCE DATA VR max.

LG tv tuner unit

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R J TV TUNER, VHF OSCILLATOR APPLICATIONS. *j U n it in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation

transistor 1p3

Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
Contextual Info: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S

D 417

Abstract: NP100
Contextual Info: MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 C o lle ctor-E m itter Voltage v CEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Em itter-Base Voltage v EBO 6.0 6.0 5.0 V >C 100 100 100 m Adc C ollector C urrent — C ontinuous Unit BC846ALT1*, BLT1*

aj DC

Abstract: marking aj
Contextual Info: TAIWAN 1T1G - 1T7G SM SEMICONDUCTOR RoHS 1.0 AMR Glass Passivated Rectifiers 1 5=1 C O M P L IA N C E Features <> 4<> <' 4- Low fo rwa rd voltage d rop Hig h curre nt capabi lity High reliability High surgo curront capability 3mm m iniature body Green compound with suffix 6G" on packing

Contextual Info: ObE D N AMER PHILIPS/DISCRETE _I t _ b b s a ^ i ooi3Qoa 4 BF994 A T - 31- 3 ^ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic microminiature envelope w ith source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television tuners and

Contextual Info: Philips Components D a ta s h e e t sta tu s Product specification d ate of Issue October 1990 BSP106 N-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES . Very low RDS on • Direct interface to CMOS, TTL, etc. • High-speed switching

AT91RM9200

Abstract: 372 lfbga Encapsulation thermal resistance pam 8304 1768E AT45DB161B circuit diagram of PAM transmitter and receiver DDI0100E ARM920T ISO7816 AT91RM9200 SDRAM
Contextual Info: Features • Incorporates the ARM920T ARM Thumb® Processor • • • • • • • • • • • • • • • • – 200 MIPS at 180 MHz, Memory Management Unit – 16-KByte Data Cache, 16-KByte Instruction Cache, Write Buffer – In-circuit Emulator including Debug Communication Channel

PDC 7ROM

Abstract: mcr 5102 1768I atmel part marking AT24C512 7ROM csr schematic usb to spi rj45 Datasheets 7ROM 44256 dram A2 2525 at91rm9200
Contextual Info: Features • Incorporates the ARM920T ARM Thumb® Processor – – – – • • • • • • • • • • • 200 MIPS at 180 MHz, Memory Management Unit 16-KByte Data Cache, 16-KByte Instruction Cache, Write Buffer In-circuit Emulator including Debug Communication Channel

atmel part marking AT24C512

Abstract: power transistor mrc 438 STR G 8654 372 ball lfbga Encapsulation thermal resistance at45db321b atmel at45db642 22721 AT45DBX DDI-0100 pam 8304
Contextual Info: Features • Incorporates the ARM920T ARM Thumb® Processor – – – – • • • • • • • • • • • • • • • • 200 MIPS at 180 MHz, Memory Management Unit 16-KByte Data Cache, 16-KByte Instruction Cache, Write Buffer In-circuit Emulator including Debug Communication Channel

tk 1838 ir

Contextual Info: Features • Incorporates the ARM920T ARM Thumb® Processor – – – – • • • • • • • • • • • • • • • • 200 MIPS at 180 MHz, Memory Management Unit 16-KByte Data Cache, 16-KByte Instruction Cache, Write Buffer In-circuit Emulator including Debug Communication Channel

C0309

Abstract: 0.25 WATT philips METAL film resistor 1q15
Contextual Info: Philips Components Product Specification Metal Film Resistor .40 & .66 Watt .1%to1% DESCRIPTION A homogeneous film of metal alloy is deposited on a high grade BALOX ceramic body. After a helical groove has been cut in the resistive layer; tin plated, copper leads