BF988 Search Results

BF988 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BF988	Philips Semiconductors	Silicon N-Channel Dual Gate MOS FET	Original	PDF	243.56KB	12
BF988	Siemens	Cross Reference Guide 1998	Original	PDF	27.35KB	7
BF988	Vishay Telefunken	TRANS MOSFET N-CH 12V 0.03A 4TO-50	Original	PDF	177.39KB	8
BF988	Vishay Telefunken	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF	141.44KB	8
BF988	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	83.98KB	1
BF988	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.25KB	1
BF988	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	105.31KB	1
BF988	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	42.73KB	1
BF988	Philips Semiconductors	Silicon n-channel dual gate MOS-FET	Scan	PDF	264.46KB	11
BF988	Philips Semiconductors	Silicon n-channel dual gate MOS-FET	Scan	PDF	41.17KB	2
BF988A	Temic Semiconductors	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode	Original	PDF	163.41KB	8
BF988A	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode	Original	PDF	141.45KB	8
BF988A	Vishay Telefunken	TRANS MOSFET N-CH 12V 0.03A 4TO-50	Original	PDF	177.39KB	8
BF988B	Vishay Intertechnology	N-Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode	Original	PDF	141.45KB	8

BF988B	Vishay Telefunken	TRANS MOSFET N-CH 12V 0.03A 4TO-50	Original	PDF	177.39KB	8

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Bristol Electronics	BF988		265		2	1 - 10 $2.18 100 $1.57 1000 $1.46 10000 $1.46	Buy Now
Quest Components	BF988		212			1 $4.50 10 $2.25 100 $2.10 1000 $2.10 10000 $2.10	Buy Now
Philips Semiconductors BF988
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ComSIT USA	BF988		2,390			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BF988 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
S852T Abstract: BF579 T0-50 BF964S BF96 BFP183T Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15	OCR Scan	BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T	PDF
Contextual Info: OT » 1990 Philips Com ponents D a te s h e e t s ta tu s P re lim in a ry s p e c ific a tio n d a te o f is s u e O c to b e r 1d 90 FEATURES • Short channel transistor with high ratio [YfelTCia. • Low noise gain controlled amplifier to 1 GHz. BF988	OCR Scan	BF988 bbS3131	PDF
BF988 Abstract: BF988A BF988B Contextual Info: BF988 Vishay Semiconductors N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range	Original	BF988 BF988 D-74025 08-Jul-99 BF988A BF988B	PDF
BF988 Abstract: BF988A BF988B Contextual Info: BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range	Original	BF988 BF988 D-74025 08-Jul-99 BF988A BF988B	PDF
BF988 Abstract: BF988A BF988B 4584 applications Contextual Info: BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages of VHF- and UHF-tuners. Features D D D D Integrated gate protection diodes D High AGC-range	Original	BF988 BF988 D-74025 29-Jan-97 BF988A BF988B 4584 applications	PDF
BF988A Abstract: bf988 BF988B Contextual Info: BF988 Vishay Telefunken N–Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages especially VHF- and UHF- tuners. Features D D D D D High AGC-range	Original	BF988 BF988 D-74025 08-Jul-99 BF988A BF988B	PDF
TO50 package Abstract: BF988 BF988A BF988B Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance	Original	BF988 2002/95/EC 2002/96/EC 08-Apr-05 TO50 package BF988 BF988A BF988B	PDF
BF988A Abstract: BF988B TO50 package Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High gain High AGC-range Low feedback capacitance	Original	BF988 2002/95/EC 2002/96/EC BF988 BF988A BF988B D-74025 15-Apr-05 TO50 package	PDF
BF988 Abstract: BF988A BF988B Contextual Info: BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input and mixer stages of VHF- and UHF-tuners. Features D D D D Integrated gate protection diodes D High AGC-range	Original	BF988 BF988 D-74025 29-Jan-97 BF988A BF988B	PDF
BF988 Abstract: LTA 703 S BF988A Contextual Info: Tem ic BF988 Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Electrostatic sensitive device. Observe precautions for handling jk Input and mixer stages of VHF- and UHF-tuners. Features • • • • Integrated gate protection diodes	OCR Scan	BF988 BF988 29-Jan-97 LTA 703 S BF988A	PDF
Transistor BF988 Abstract: BF988 T79 marking IEC134 n-channel dual gate philips ll philips bf988 Contextual Info: * * * 8 1990 BF988 Datasheet status Preliminary specification date o f »asue October 1d90 Q U I C K R E F E R E N C E D ATA FEATURES • S h ort ch a rn e l tran sistor w ith high ratio \|Yfs l/Cis. • Low noise gain con trolled am plifier to 1 G H z. D E S C R IP T IO N	OCR Scan	BF988 bbS3S31 03S122 Transistor BF988 BF988 T79 marking IEC134 n-channel dual gate philips ll philips bf988	PDF
bf988 Contextual Info: BF988 VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance	Original	BF988 BF988 D-74025 20-Aug-04	PDF
BF981 Abstract: bf498 BF982 BF980 SOT-103 Dual-Gate* bf981 BF926 sot103 BF980 Philips BF751 Contextual Info: Small Signal Leaded Devices Field Effect Transistors Dual-Gate MOSFET cont. •d SS VDS Type BF980 BF980A BF981 BF982 BF988 Pkg (V) SOT-103 SOT-103 SOT-103 SOT-103 SOT-103 18 18 20 20 12 (mA) _V(P) Gl-S max (V) yfs typ (mA/V) 1.3 20 2.5 1.3 2.5 19 19 14	OCR Scan	BF980 BF980A BF981 BF982 BF988 OT-103 OT-103 bf498 SOT-103 Dual-Gate* bf981 BF926 sot103 BF980 Philips BF751	PDF
BF988 Abstract: Transistor BF988 mosfet vhf power amplifier dual-gate Contextual Info: Short-form product specification Philips Semiconductors Silicon N-channel dual-gate MOS-FET BF988 PINNING FEATURES • Short channel transistor with high I Vfs\| : Cis ratio • Low-noise gain-controlled amplifier to 1 GHz. PIN SYMBOL DESCRIPTION 1 s, b 2 d	OCR Scan	BF988 BF988 Transistor BF988 mosfet vhf power amplifier dual-gate	PDF

L300M Contextual Info: v m BF988 r n r ▼ Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions fo r handling. A Applications Input- and m ixer stages especially VH F - and UHF- tuners. Features • Integrated gate protection diodes	OCR Scan	BF988 BF988 D-74025 20-Jan-99 L300M	PDF
Contextual Info: BF988 VISHAY Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance	Original	BF988 BF988 D-74025 20-Aug-04	PDF
PHILIPS MOSFET MARKING Abstract: SOT103 n channel depletion MOSFET Bf988 transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate Contextual Info: h3E D Philips Components Data sheet status Preliminary specification date of issue October 1990 • bhS3TS4 GOTMBOM BIS m S I C 3 BF988 NAPC/PHILIPS SEMICON] Silicon n-channel dual gate MOS-FET FOR D E T A IL E D IN F O R M A T IO N SEE T H E LA TEST ISSUE OF H A NDB O O K SC07 OR D A T A S H E E T	OCR Scan	BF988 007M3Q5 BF988 05-max OT103. MBB087 PHILIPS MOSFET MARKING SOT103 n channel depletion MOSFET transistor SOT103 philips bf988 transistor SOT103 mosfet transistor scans sheet dual gate fet Dual-Gate	PDF
BF988A Abstract: BF988 BF988B TO50 package Contextual Info: BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • 4 Integrated gate protection diodes High cross modulation performance Low noise figure High gain High AGC-range Low feedback capacitance	Original	BF988 BF988A BF988B BF988A BF988s D-74025 25-Nov-04 BF988 BF988B TO50 package	PDF
TO50 package Abstract: BF988 BF988A Contextual Info: Not for new design, this product will be obsoleted soon BF988 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • • • • • • • • • 3 Integrated gate protection diodes High cross modulation performance	Original	BF988 2002/95/EC 2002/96/EC BF988 18-Jul-08 TO50 package BF988A	PDF
CFY19 Abstract: CFY19-18 CFY19-22 BF995 BF963 CFY10 BF961 BF964S BF965 CFY65-14 Contextual Info: Microwave, RF & Tuner Transistors For complete package outlines, refer to pages PO-1 through PO-6 MOS Field Effect Transistors " BF961 BF963 BF964S BF965 BF966S BF988 BF987 Triode V DS V ^DS niA Pt mW 20 20 20 20 20 12 20 30 50 30 30 30 30 30 200 200 200	OCR Scan	E35bOS DD45427 BF961 BF995 BF963 BF993 BF964S BF994S BF965 BF997 CFY19 CFY19-18 CFY19-22 BF995 CFY10 CFY65-14	PDF
s525 Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T Contextual Info: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52	OCR Scan	BF569 BF579 BF961 BF964S BF966S BF970 BF979 BF988 BF994S BF995 s525 s918 bfr96ts S858TA3 BF-970 BFP183T	PDF
CFY19-22 Abstract: CFY19 Dual-Gate* bf981 bf987 Contextual Info: "sIEMENS AKTIENGESELLSCHAF bOE I> • SEBSbDS DDS1M7M S34 «SIEfi 'T'dó'M SIEMENS Transistoren Transistors MOS Feldeffekt-Transistoren Type MOS Field-Effect Transistors Maximum Ratings Characteristics TA= 25° C ^ds V ¡d mA P,o. G ps mW dB ' * I' c' ' '	OCR Scan	BF930 BF994S BF996S BF998 BF1012 CF739 CF750 OT-143 CFY19-18 CFY19-22 CFY19 Dual-Gate* bf981 bf987	PDF
BF998 depletion Abstract: BF988 bf988 sot 143 BF998 Contextual Info: viSM A Y ▼ _ BF998/BF998R Vishay Telefunken N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. A Applications Input- and mixer stages in UHF tuners. Features	OCR Scan	BF998/BF998R BF998R) BF998 BF998R D-74025 20-Jan-99 BF998 depletion BF988 bf988 sot 143	PDF
BF963 Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99	Original	OD-123 1N4001 1N4002 1N4003 1N4004 1N4148 BF963 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd	PDF

BF988 Search Results

BF988 Datasheets (15)

BF988 Price and Stock

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Philips Semiconductors BF988

Philips E C G Inc BF988

BF988 Datasheets Context Search

S852T

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TO50 package

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L300M

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CFY19

s525

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BF998 depletion

BF963