BF579 Search Results

transistor marking zg

Abstract: BF579 BF579R HF transistor
Contextual Info: BF 579 / BF 579 R TELEFUNKEN Semiconductors Silicon PNP Planar HF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 2 1 3 3 2 94 9280 BF579 Marking Plastic case SOT 23

Contextual Info: BF579 _J V SILICON PLANAR TRANSISTOR P-N-P transistor in a m icrom iniature envelope prim arily intended fo r u.h.f. applications in thick and th in -film circuits. Q UICK REFERENCE D ATA - v CBO max. 20 V Collector-em itter voltage open base

Contextual Info: BF579 / BF579R VISHAY Vishay Semiconductors Silicon PNP Planar RF Transistor 1 Features • High transition frequency • Low distortion BF579 2 Applications 3 1 UHF/VHF uncontrolled prestages with low noise and low cross modulation. BF579R 3 Mechanical Data

BF579

Abstract: BF579R marking GG
Contextual Info: BF579/BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency

Contextual Info: Temic BF579/BF579R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features • High transition frequency

BF579

Abstract: BF579R marking GG
Contextual Info: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion

BF519

Abstract: BF579 MBB018
Contextual Info: PHILIPS INTERNATIONAL MIE D m 711002b -OGSTQlb 3 B P H I N BF579 T ' 3>- / 7 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A

BF579

Abstract: BF579R marking GG
Contextual Info: BF579/BF579R Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low distortion

Contextual Info: BF579 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)25m Absolute Max. Power Diss. (W)250m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)15

Contextual Info: Not for new design, this product will be obsoleted soon BF579 / BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor 1 Features • • • • BF579 High transition frequency Low distortion Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

BF579

Contextual Info: ViSHAY BF579/BF579R ▼ Vishay Telefunken Silicon PNP Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ Applications U H F/VH F uncontrolled prestages w ith low noise and low cross m odulation. Features • High transition frequency

BF579

Abstract: marking GG BF579R
Contextual Info: Temic BF579/BF579R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features • High transition frequency • Low disortation 1 _EL R H ^ 2 FT 94 9280 — B 3

BF579

Contextual Info: N AMER P H I L I P S / D I S C R E T E OhE D • ^^53=131 0015750 T ■ BF579 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and

BF579

Contextual Info: BF579 / BF579R Vishay Semiconductors Silicon PNP Planar RF Transistor 1 Features • • • • High transition frequency Low distortion Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC BF579 e3 2 3 1 BF579R Applications

Contextual Info: BF579R Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W)220m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

marking GG

Abstract: BF579 BF579R Low Noise uhf transistor marking A1 TRANSISTOR
Contextual Info: BF579/BF579R Silicon PNP Planar HF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 2 1 3 3 94 9280 BF579 Marking: G7 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter

BF579

Abstract: BF579R
Contextual Info: BF579/BF579R Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features D High transition frequency D Low disortation 1 1

BFT97

Abstract: Siemens 1985 BFT65 bfr91a siemens BFQ64P BFT98T BFS55A bf254 BFR96S
Contextual Info: S IE M E N S / SPCLt SEMICONDS ' ' ?QC D • fiS 3b 3E Q 0013325 1 ■ RF Transistors Type PNP= P NPN= N Typical Application epitaxial=E planar = PL E, PL Maximum Ratings Vcbo V VcEO (V) ^80 (V) (mA) fe ft (°C) 40 25 4 25 150 Plot (mW) (°C/W) 500 N Uncontrolled TV IF amplifier stages

S852T

Abstract: BF579 T0-50 BF964S BF96 BFP183T
Contextual Info: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15

s525

Abstract: s918 BF988 bfr96ts S858TA3 BF-970 BFP183T
Contextual Info: Tem ic Semiconductors General Information Alphanumeric Index Type. T ype . Type. Type . BFR90A 9, 243 S593T 8, 105 BFR91 9, 250 S594T 8, 112 9, 163 BFR91A . . . . 9, 256 S595T 8, 119 BFP81 9, 173 BFR92 S822T 9, 338 8. 52

2SC3355 SPICE MODEL

Abstract: transistor C2003 C319B MGF1412 RF TRANSISTOR 10GHZ MRF134 rf model .lib file 2SK571 MGF1402 MRF9331 pb_hp_at41411_19921101
Contextual Info: Vendor Component Libraries RF Transistor Library May 2003 Notice The information contained in this document is subject to change without notice. Agilent Technologies makes no warranty of any kind with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

marking NC sot23

Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
Contextual Info: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications

Contextual Info: H IGH FREQUENCY SM D TRANSISTORS DESCRIPTION • Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications