BF 871 Search Results

bf 578

Abstract: u535b BF870 BF marking code BF872 ABE 029 BF npn U535
Contextual Info: SIE D SIEMENS • fl235b05 GÜHlüSfl Ü17 « S I E G SIEMENS AKTIENGESELLSCHAF PNP Silicon Transistors with High Reverse Voltage • • • • BF 870 BF 872 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 869, BF 871 NPN

881 bf

Abstract: bf881 BF871 BF869 7A SF marking B44 BF872 BF marking code
Contextual Info: SIEMENS m 51E T> A235b05 G04iaS4 471 « S I E G SIEMENS AKTIENGESELLSCHAF r ^ 3 NPN Silicon Transistors with High Reverse Voltage • • • • - 0 5 BF 869 . BF 881 High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 870, BF 872 PNP

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

2602

Abstract: 11308 2SC5826
Contextual Info: SPICE PARAMETER 2SC5826 by ROHM TR Div. * Q2SC5826 NPN BJT model * Date: 2006/12/04 .MODEL Q2SC5826 NPN + IS=3.3000E-12 + BF=248.92 + VAF=100 + IKF=5.2602 + ISE=3.3000E-12 + NE=1.7608 + BR=7.4847 + VAR=100 + IKR=1.1308 + ISC=8.9866E-12 + NC=3.3932 + NK=.87107

2SC5825

Abstract: Q2SC5825 BF248
Contextual Info: SPICE PARAMETER 2SC5825 by ROHM TR Div. * Q2SC5825 NPN BJT model * Date: 2006/12/04 .MODEL Q2SC5825 NPN + IS=3.3000E-12 + BF=248.92 + VAF=100 + IKF=5.2602 + ISE=3.3000E-12 + NE=1.7608 + BR=7.4847 + VAR=100 + IKR=1.1308 + ISC=8.9866E-12 + NC=3.3932 + NK=.87107

11308

Abstract: 2SC5824 Q2SC5824
Contextual Info: SPICE PARAMETER 2SC5824 by ROHM TR Div. * Q2SC5824 NPN BJT model * Date: 2006/12/04 .MODEL Q2SC5824 NPN + IS=3.3000E-12 + BF=248.92 + VAF=100 + IKF=5.2602 + ISE=3.3000E-12 + NE=1.7608 + BR=7.4847 + VAR=100 + IKR=1.1308 + ISC=8.9866E-12 + NC=3.3932 + NK=.87107

RE-16

Abstract: 2SC5001
Contextual Info: SPICE PARAMETER 2SC5001 by ROHM TR Div. * Q2SC5001 NPN BJT model * Date: 2006/11/14 .MODEL Q2SC5001 NPN + IS=3.0000E-12 + BF=282.06 + VAF=38.162 + IKF=16.271 + ISE=3.0000E-12 + NE=1.6795 + BR=105.95 + VAR=100 + IKR=6.8767 + ISC=60.160E-9 + NC=4.4020 + NK=.37235

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 LOC ALL RIGHTS RESERVED. AD REVISIONS DIST 00 LTR 01 DATE DESCRIPTION REV ECN 1821 c APVD 2 22-88 SB - 1 1 728 /8 9 BF REV LOC 8 DIST AD-4171 REV PER 0010-0805-93

NJU6438

Abstract: NJU6438CH SEG40 2RT 3V 2A sdaaffi
Contextual Info: NJU6438 E 3 r c 3 1 / 4 f i — T A ' L C D h* H /< • M - m N JU 6 4 3 8 i%- fe / / > ^ - frro L C D ÿ 1 / 4 T í - T ' í - ' e l E l l l ' •SLCDh'^'f a i V h ' ^ A ' & t f « ' » h h ' ^ r t * là,4h'7-f/rÂï/4or 160-bf » h è l g l i f -§> z. t

bf758

Abstract: BF757 BF299 Thomson-CSF amplifier BF 759 BF416 BF493 HIGH VOLTAGE VIDEO AMPLIFIER BF643 BF859
Contextual Info: high voltage video amplifier transistors S> transistors haute tension vidéo-am plification ih o m s o n -c s f Type N PN M axim u m ratin gs PNP Ptot Ptot / T C haracteristics at Tam |, = 25°C v C EO •»21E! / Vc e / 1C Tam b = 25 °C min m in-m ax (W

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

CBF423

Abstract: cbf420 CBF422 L250
Contextual Info: 'T-zn-o SI EM EN S A K T I E N 6 E S E L L S C H A F 47E D • Ô E 3 S b O S 0 D 2 b S7 1 T «SIEG NF-Bipolar-Transistoren / AF Bipolar Transistors High-Voltage Transistors Plastic Package NPN Type Max. rating s ^CEO Characteris tics h Pto. h FE ''CEsat

BF298

Abstract: BC 458 transistors BC 458 transistors BC 548 BC 558 transistor BC 458 transistor bf 422 NPN bc 457 transistors BC 548 BC 558 PNP BC 557 npn Transistor BC 457
Contextual Info: th o m so n -csf general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PN P N PN PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

BF872S

Abstract: transistors bf 423
Contextual Info: TELEFUNKEN ELECTRONIC T> Ö1C X ' 2 3~&l ò 'ìaotn b DDQSbMS 5 H A L 6 6 Video and Auto Ignition Transistors Video Transistors and Auto Ignition Transistors fill in the application gaps between the high voltage, high speed, low gain switches and the more conventional low voltage, high

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Contextual Info: 1 1234456789 1 A3BCDEF18DD1DF7D3FD77D 1 1D31FD811 1DFF3D1 1 DEF33BC1 1 1 F1 1 1 51  !561 F"1 #$1 5%51 !61 6551 &"D'1 6551 %51 61 1 #(5%5(1 6 6(1*+(571

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM