BF 494 Search Results

transistor 2SC930

Abstract: mps9426 2sc929 2SC948 3854AN 2N4995 2SC838 2SC839 4935N BFX60
Contextual Info: S E M I C O N D U C T O R S INC QTE D | S l B b b S O G G O Q S ? ^ M | *7”" POLARITY RF-IF High Frequency Transistors CASE BF BF BF BF BF 115 152 153 155 158 N N N N N TO-72J TO-106 TO-106 TO-72G TO-106 BF BF BF BF BF 159 160 173 181 182 N N N N N TO-106

BF173

Abstract: BF173 Transistor bf 494 transistor transistor bf 494 transistor BF 489 BF 494 C emetteur video iran cbc6 bf 173 transistor
Contextual Info: BF 173 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN S ILIC IU M , PLA N A R E P IT A X IA U X The NPN planar epitaxial transistor BF 173 intended for use in L F video amplifiers un­ controlled stages of television receivers. Le transistor NPN "planar é p ita xia l" BF 173 est

bf494

Abstract: bf 494 BF495 Transistors BF 494 BF 494 C bf494 emitter common BP495
Contextual Info: BF 494 BF 495 NPN SILICON RF SMALL SIGNAL TRANSISTORS $ | j V - iììp f j S y CASE T0-92E THE BF494, BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS UP TO 100MHz. CBE BF494 ABSOLUTE MAXIMUM RATINGS BF495 Collector-Base Voltage

transistors BC 23

Abstract: BF494A transistors BC 557b BF494B BHARAT elek 547B 548B 549B BC547A BF494
Contextual Info: BHARAT ELEK/SENICOND DI 47E J> 14353^0 □□□□OOfl 3bT BELI SILICON SMALL SIGNAL DEVICE i r - 3 l- 0 f SILICON SMALL SIGNAL DEVICES QUICK REFERENCE CHART PLASTIC PACKAGES NPNIF/RF TRANSISTORS VCE Si Device No 1. 2. 3. 4. 5. 6. BF 494 BF494A BF494B BF 495

2SA1759

Abstract: 49411 747 datasheet 7719
Contextual Info: SPICE PARAMETER 2SA1759 by ROHM TR Div. * Q2SA1759 PNP BJT model * Date: 2006/12/18 .MODEL Q2SA1759 PNP + IS=250.00E-15 + BF=156.23 + VAF=100 + IKF=.27401 + ISE=250.00E-15 + NE=1.3315 + BR=4.2710 + VAR=100 + IKR=.13737 + ISC=592.05E-15 + NC=3.0320 + NK=.96812

pnp datasheet

Abstract: 2SB1708
Contextual Info: SPICE PARAMETER 2SB1708 by ROHM TR Div. * Q2SB1708 PNP BJT model * Date: 2006/12/07 .MODEL Q2SB1708 PNP + IS=3.8000E-12 + BF=470.25 + VAF=30.115 + IKF=8.4720 + ISE=3.8000E-12 + NE=1.9770 + BR=28.873 + VAR=100 + IKR=2.5384 + ISC=821.44E-12 + NC=2.3924 + NK=.82023

transistor bf 198

Abstract: BF198 transistor bf 494 RF Transistor BF198 BF 494 C A495 A-04 Q62702-F354 A0349-3
Contextual Info: esc o • asBSbüs üdgmmmid a NPN Silicon RF Transistor SIEM EN S IS IE 6 _ 25C. 0 4 4 4 Ó - - A K T IEN 6ESELLSC H A F - _ _ BF198 T ~ 3 1~ i f for gain-controlled TV IF amplifier stages BF 198 is an NPN silicon planar radio-frequency transistor in TO 92 plastic package

a02 Transistor rf

Abstract: transistor bf 198
Contextual Info: 25C 0 • a23StiG5 0DG444b a NPN Silicon RF Transistor - - SIEMENS AK TIEN 6E SE LL SC HA F “ ■SIE6r 25C. 0444Ó _ 0 _ r ~ BF198 3 / - z-f fo r gain-controlled T V IF am plifier sta g e s BF 198 is an NPN silicon planar radio-frequency transistor in TO 9 2 plastic package

Contextual Info: ZTX1049A SPICE PARAMETERS *ZETEX ZTX1049A Spice model * .M OD EL Last revision 15/6/95 ZTX1049A NPN IS=1.5E-12 NF=1.0 BF=600 IKF=7.5 VAF=100 + ISE=0.9E-13 NE=1.25 NR=1.0 BR=150 IKR=3 VAR=15 + ISC=5.0E-13 NC=1.76 RB=0.1 RE=0.018 RC=0.007 + CJC=136E-12 CJE=550E-12 M JC=0.352 M JE=0.36

Contextual Info: A88 5E88) %74874900":A0<0%?;7C ,C5B0?>697EB12<50C,0C9J5 BF F "'010"+0"!)$ 90B>02090<,>4:90;:A0<0=:7?>4:9 &'$%010!"&! %0 & , =

B1490

Contextual Info: D99 6ACD9) 0/4.,77C0;<:@0/ -=EC289:890677:4:6?4J0C-0D:K6 BF F "'020"+0"!)$ 90B>02090<,>4:90;:A0<0=:7?>4:9 &'$%020!"&! %0 M0&BBC8C0EC5065:E:@?02AAC@G65 M0$6DD0E92?0EBBR0=62<28604FCC6?E M0CBO0@AE:@?02G2:=23=6 M0FBBB.0:D@=2E:@? M0-=EC209:890677:4:6?4J70FA0E@01

NJU6438

Abstract: NJU6438CH SEG40 2RT 3V 2A sdaaffi
Contextual Info: NJU6438 E 3 r c 3 1 / 4 f i — T A ' L C D h* H /< • M - m N JU 6 4 3 8 i%- fe / / > ^ - frro L C D ÿ 1 / 4 T í - T ' í - ' e l E l l l ' •SLCDh'^'f a i V h ' ^ A ' & t f « ' » h h ' ^ r t * là,4h'7-f/rÂï/4or 160-bf » h è l g l i f -§> z. t

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

BFW 10 fet

Abstract: transistor bf 494 bf 494 transistor BFW 10 A FET transistor bf 184 transistor BF 253 transistor bf 241 BF 184 transistor transistor bf 495 transistor bf 254
Contextual Info: 6091788 MICRO ELECTRONICS CORP_ 820 00652 D J 3 /~>7 MICRO ELECTRONICS CORP 02 DE | bCH17fl0 DDDDbSS 1 V C E SA T CASE Pd (mVY) *C Im A) V 'c CEO (V) min max Im A l V CE (V) 167 — — — — 1 3 3 2.5 4 max 'c fT min Cob Cre* max N.F. (MHz)

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Contextual Info: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS Device VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min min VCE ICM PTA ICBO VCE sat mA Volts mA mW max max 1C min/max typ Cob

TRANSISTOR BFW 11

Abstract: BFW10 pins pin configuration of BFW10 BFW10 BF 494 C bf 494 transistor BF494 CIL 108 transistor bf 194b BF200 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

bfw10 transistor

Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

BdP 285

Abstract: bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495
Contextual Info: TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO C12es C12ss t p fT P h2le XB pojemnoóò kolektor - baza pojemnoóé sprzgzenia zwrotnego w ukladzie wspòlnego «altera /OE/ pojemnosé sprzeienia zwrotnego w ukladzie wspòInego iródta /OS/ oziatotiiwoàé pomiarowa

TFK 680 CNY 70

Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Contextual Info: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.