BF 440 TRANSISTOR Search Results

BF440

Abstract: BF441 IC 41 BF a1265 ir 441 c JEDECTO-92 Fm amplifier
Contextual Info: BF 440 • BF 441 Siliziium-PNP-Epitaxial-Planar-HF-Transistoren Silicon PNP Epitaxial Planar RF Transistors Anwendungen: BF 440: G eregelte AM- und FM -Verstärkerstufen BF 441: AM- und FM-Verstärkerstufen Applications: BF 440: C ontrolled AM and FM am p lifier stages

BF441

Abstract: bf440 transistor BF 275 440 transistor JY marking transistor bf 440 transistor
Contextual Info: filC D TELEFUNKEN ELECTRONIC • fi^EGO^b QQ055Q7 T - J - BF 440 • BF 441 TTilLitFdDÄIiK] electronic Creative Technologies Silicon PNP Planar Epitaxial RF Transistors Applications: BF 440: Controlled AM and FM amplifier stages BF 441: AM and FM amplifier stages

BF441

Abstract: BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509 BFS20 BFS62
Contextual Info: RF transistors Type Structure Silicon transistors Fifl. Nr. Maximum ratings Characteristics A c t a* I q anc ^CE V mA f j at MHz 48-167 1 10 a 27 4 10 7 a 38 67-220 1 36-125 1 10 30 25 £27 40 40 c iire a UCB V PF 230 1 0.65 10 350 4 0.15 10 550 260 200 5

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

BC113

Abstract: audio NPN bc 657 BC 114
Contextual Info: CONSUMER TRANSISTORS continued > Li. a. < _§ X CD E u > CD O """a) o ’ o o n o @ a. >• UJ ll.c PACKAGE POLARITY DESCRIPTION (A )03 3A TYPE High voltage amplifiers o in CM II ro 1@ < j= _u 5 a a. BC 300 NPN Audio driver 80 120 1000 (10) 140 5 0.85 BC 393

transistor Bf 444

Abstract: transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324
Contextual Info: 25C » • ô53SbQS GQa4H73 ü « S I E G [.• PNP Silicon RF Transistor SIEMENS AKTIEN ÛESELLSCH AF '3 T -? / -'? BF 324 D.- for large-signal VHF stages BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package TO A 3

c 2579 power transistor

Abstract: TRANSISTOR C 2577 transistor Bc 542 c 2579 transistor marking EB 202 transistor transistor bc 564 C 2577 transistor AE 2576 PM564 Transistors marking WZ
Contextual Info: m I TELEFUNKEN ELECTRONIC 17E » f l'îa O G 'ib O O O W i 1 BF 885 S T IIL IF M K IK IK I e le c tro n ic C ru ft* T«chno oâ«s T - ^ - o z r Silicon NPN Epitaxial Planar RF Transistor Applications; Video 8-class power stages (n TV receivers Features: • High reverse voltage

bf324

Abstract: transistor IR 324 C transistor IR 324 A transistor BF 324 BF324 transistor transistor BF324 Bf 324 transistor BF 450
Contextual Info: BF324 PNP Silicon Epitaxial Transistor with extremely small feedback capacitance, designed for base-grounded FM RF amplifiers in the range of 100 MHz. Jf | e - X V c J t 2.5 5*H »CO <r‘ L * ♦ in ♦ r*f E m ax.Q 5 0 1,25 Plastic case * JEDEC TO-92 TO-18 compatible.

BF324

Abstract: oms 450 Q62702-F311 S420
Contextual Info: 25C » • ô53SbQS GGQ4H73 0 WÊZIZG [; PNP Silicon RF Transistor SIEMENS AKTIENÛESELLSCHAF '3 T -ïl-tl BF 324 D.- fo r large-signal V H F stag es BF 3 2 4 is an epitaxial PNP silicon planar transistor in TO 9 2 plastic package TO A 3

12A02CH

Contextual Info: 12A02CH SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 110f NF 1 IKF 230m NE 2 NR 1 IKR 80m NC 2 IRB 30m RE 125m XTB 1 XTI 3 VJE 720m TF 300p VTF 1 PTF VJC 600m XCJC 1 FC 500m AF 1 Temp = Date : Unit A A A A Ohm V sec V deg V

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

MJE 280 power transistor

Abstract: ZTX1048A transistor bf 494 ZTX 450 F 1048A NPN Transistor 10A 100V DSA003762 136E-12
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1048A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s re tu D=0.1 0.50 ra pe 80 60 m te D=0.5 0.75 t en bi tp 120 Am Max Power Dissipation - Watts D=1(D.C) 160 100 ISSUE 3 – FEBRUARY 1995

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

TF-450

Abstract: BF 494 C ztx 450 ZTX1047A transistor bf 494 bf550 DSA003761
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1047A t1 140 D=t1 tp D=0.2 D=0.05 40 Single Pulse 20 0.1ms 1ms 10ms 100ms 1s 10s 0.25 100s -40 40 80 120 160 E E-Line TO92 Compatible re tu D=0.1 0.50 ra pe 80 60 C B m te D=0.5 0.75 t en bi tp 120 Am

Contextual Info: H A 1 6 8 1 6 N T /M P SLIC IC for Key Telephone Applications Pin Arrangement Features • Basic Functions: Internal battery feed control (B), loop super­ vision (S) and 2w-4w conversion (H) • Constant Current Feed: +24V Supply voltage • Internal darlington power transistor

FZT1053A

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1053A ISSUE 1 - SEPTEMBER 1997 FEATURES * * * * * * C VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 78mΩ at 4.5A

FZT1053A

Abstract: power 22E TR22E BF600 DSA003707 C05A 22e9
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT1053A ISSUE 2 - MARCH 2001 FEATURES * * * * * * C VCEO = 75V 4.5 Amp Continuous Current 10 Amp Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance; RCE sat = 78mΩ at 4.5A

Contextual Info: SOT223 NPN SILICON PLANAR M EDIU M POWER HIGH GAIN TRANSISTOR ISS U E 1 - SEPT EM BER 1997 _ FZT1053A _ _ FEATURES VCE0= 75 V 4.5 Am p Continuous Current 10 Am p Pulse Current Low Saturation Voltage High Gain Extremely Low Equivalent On-resistance;

to92c

Abstract: MPSA 506 transistor transistor bf 422 NPN smpsa42 bc 617 transistor equivalent to92d BC368N BF 414 BB 112 BC338N
Contextual Info: Selection Guide For complete information and data sheets please contact us on our internet homepage Leaded Components Varactor Diodes leaded Type Characteristics (TA = 25 °C) Maximum Ratings VR IF CT

D44Q

Abstract: AC439 D44Q1 D44Q3 D44Q5 transistor zx series BF 272 transistor
Contextual Info: HIGH VOLTAGE NPN POWER TRANSISTORS D44Q Series 125-225 VOLTS 4 AMP, 31.25 WATTS The General Electric D44Q is an encapsulated power tran­ sistor designed for various specific and general purpose applications such as: 120 V.A.C. line operated amplifiers; series, shunt and switching regulators; low thru high fre­

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

32 channel Relay controller IC

Abstract: e35r "2W to 4W" conversion ic Input 24V Output 5V 2W DC DC LF177
Contextual Info: H A 1 6 8 1 6 N T /M P SLIC IC for Key Telephone Applications Pin A rrangem ent Features • Basic Functions: Internal battery feed control (B), loop super­ vision (S) and 2w-4w conversion (H) • Constant Current Feed: +24V Supply voltage • Internal darlington power transistor

TF-450

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Z T X 10 4 7 A ISSUE 3 -JANUARY 1995_ _ FEATURES * Very Low Saturation Voltage * High Gain * 4 Amp Continuous Current APPLICATIONS * DC-DC Convertors * Power Management - Supply Switching