BF 256 Search Results

4856a

Abstract: Bc 247b 2SK34 2SK19 30A-GR 2N4393 2SK19-BL 2SK33 BF 246B 2sk to-92
Contextual Info: SEMICONDUCTORS INC DTE D | 013bbSD □□□D3G7 S | N-Channel Junction Field Effect Transistors GENERAL PURPOSE MAXIMUM RA TIN G S TYPE NO. C A SE BC BC BC BC 264A 264B 264C 264D BF BF BF BF BF BF 2N 2N 2N 2N 2N Yfs mmhos •d s s (mA Pd (mWI bvg ss (V)

bf256

Abstract: BF 256 bf 867 bf256a "igss 5 na"
Contextual Info: BF 25 6 FIELD EFFECT TRANSISTORS, SILICON, N CHANNEL TRANSISTORS A EFFET D E CHAMP , SILIC IU M , CAN AL N VHF amplification Amplification V H F IDSS 3 - 18 mA BF 256 3 - 7 mA BF 256 A 6 - 13 mA BF 256 B 11 - 18 mA f Y 2 1s>* 1000 MHz BF 256 C typ * Frequency at which the real part of the forward

BF 256

Abstract: BF256 BF266 A5169 BF256C BF256B F256C f733 A5168 BF56
Contextual Info: ¿si 1 asc t> m aaastos ooq44?g s bisieû v T^-zhJS’ N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF 04470 BF 256 A BF 256 B ' ~o-BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package

A5169

Abstract: BF256 BF256C BF 256 BF256B BF256A
Contextual Info: asc D • fl235bG5 GÜ0MM7Ü 5 H S I E 6 N-Channel Junction Field-Effect Transistors SIEMENS AKTIEN6ESELLSCHAF .04470 ' "d " T-Z/-JS’ BF 256 A BF 256 B BF 256 C BF 256 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF applications.

HYB18TC256800BF

Contextual Info: February 2008 HYB18T C25680 0 BF HYB18T C25616 0 BF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.6 Internet Data Sheet HYB18TC256[80/16]BF 256-Mbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.6, 2008-02

TMP47P440AN

Abstract: TMP47C400BN TMP47P421AF TMP47C212AN TMP47C421AF TMP47P446VF TMP47C433AN TMP47C200BN TMP47P410AN qfp-44
Contextual Info: TLCS-47 Series CMOS Type Function TMP47C200BN/BF TMP47C400BN/BF X44 RAM I/O Port Mm. Instruction Supply ROM Execution Time Voltage Package (byte) (nibble} (bit) (MS) (V) 2K 128 4K 256 2K 128 4K 256 2K 128 4K 256 Standard (LED driver) TMP47C460AN/AF 2.7-6.0

HYB18TC256160BF-3S

Abstract: VM 256MB DDR400 HYB18TC256800BF 800E DDR400
Contextual Info: May 2007 HYB18T C25680 0 BF HYB18T C25616 0 BF 256-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.3 Internet Data Sheet HYB18TC256[80/16]BF 256-Mbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.3, 2007-05

SW 226 N

Contextual Info: TMP86C829B/H29B/M29B TO SH IB A CMOS 8-Bit Microcontroller TMP86C829BU/BF, TMP86CH29BU/BF, TMP86CM29BU/BF The TMP86C829B/H29B/M29B are the high-speed, high-performance and low power consumption 8 -bit m icrocom puter, in clu d in g R O M , R A M , L C D d river, m ulti-function tim er/counter, s e ria l in terface

FPT-48P-M19

Contextual Info: MBM29DL32TF/BF-70 Data Sheet Retired Product MBM29DL32TF/BF -70 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

HYB18TC512160BF-3S

Abstract: HYB18TC512
Contextual Info: September 2007 HYB18T C51280 0 BF HYB18T C51216 0 BF 512-Mbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.21 Internet Data Sheet HYB18TC512[80/16]0BF 512-Mbit Double-Data-Rate-Two SDRAM HYB18TC512800BF, HYB18TC512160BF

D 823 transistor

Abstract: BF56 BF821S
Contextual Info: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power

b0349

Abstract: BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570
Contextual Info: TELEFUNKEN ELECTRONIC 17E ì> • fi^EOQ^b 0 Q C m 3 1 BF 870 S • BF 872 S TTHLIlIFÜÎWilîStlGsOelectronic Silicon PNP Epitaxial Planar RF Transistors r- 33-17 Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

M2D068-BF

Abstract: M2D074-DF M4D094-HA A4D450-AP01 A4D420-AP02 W4D350-CR06 S4D420-AP02 W4D420-CP02 M4D068-DF 068-DF
Contextual Info: AC axial fans S-Range, Ø 200 - Material: sheet steel coated in black - Direction of rotation: counter-clockwise, seen on rotor - Type of protection: IP 44 2 *4D 200(1) M4D068-BF 3 *4S 200 M4S068-BF 4 (1) subject to alterations W A 230/400 230/400 230 230

Contextual Info: HL1541A/AC/BF/DL/DM InGaAsP LD Description The HL1541 A/AC/BF/DL/DM are 1.55 |im band laser diodes. Features • The HL1541A/AC are packaged in chip carrier type miniature packages, and are appropriate for incorporating in modules. • The HL1541BF is packaged in a butterfly-type

TC4072BP

Abstract: 4 bit binary divider HIGH SPEED FREQUENCY DIVIDER TC5032P TC4584 7-stage frequency divider TC5000 tc4036 TC5001 TC4029BP
Contextual Info: TC4000 Series PRODUCT NAME FUNCTION PAGE TC4000BP DUAL 3 INPUT NOR GATE PLUS INVERTER 75 TC4001BP/BF QUAD 2 INPUT NOR GATE 80 TC4001UBP QUAD 2 INPUT NOR GATE 83 TC4002BP/BF DUAL 4 INPUT NOR GATE 80 TC4006BP 18-STAGE STATIC SHIFT REGISTER 86 TC4007UBP/UBF DUAL COMPLEMENTARY PAIR+INVERTER

800E

Abstract: HYB18TC1G800BF
Contextual Info: July 2007 HYB18T C1G 80 0 BF HYB18T C1G 16 0 BF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.21 Internet Data Sheet HYB18TC1G[80/16]0BF 1-Gbit Double-Data-Rate-Two SDRAM HYB18TC1G800BF, HYB18TC1G160BF Revision History: 2007-07, Rev. 1.21

TC4078BP

Abstract: TC4078BF
Contextual Info: TC4078BP/BF C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C4078BP/ T C 4 0 7 8 B F 8-INPUT NOR/OR • >L The TC4078BP/BF is 8-bit positive logic NOR/OR gate. Since each output of this gate is provided with a buffer, the input/output voltage characteristics have

Contextual Info: November 2007 HYB18T C1G 80 0 BF HYB18T C1G 16 0 BF 1-Gbit Double-Data-Rate-Two SDRAM DDR2 SDRAM RoHS Compliant Products Internet Data Sheet Rev. 1.30 Date: 2007-11-29 Internet Data Sheet HYB18TC1G[80/16]0BF 1-Gbit Double-Data-Rate-Two SDRAM Revision History: Rev. 1.30, 2007-11

SA611

Abstract: 29DL320
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

BF256

Abstract: BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C
Contextual Info: 2SC D • S23SbOS Q Q tm tiH T « S I E Ö N-Channel Junction Field-Effect Transistors 25C 04-464SIEMENS AKTIENGESELLSCHAF D BF 246 A B F246B B F246C BF 24 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF amplifiers.

29DL32BF

Abstract: MBM29DL32
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

PA marking code

Abstract: FPT-48P-M19 SA47 SA70
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20908-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL34TF/BF 70 • DESCRIPTION The MBM29DL34TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V