BF 107 Search Results

Contextual Info: BF 391 • BF 392 ■ BF 393 NPN HIGH VOLTAGE VIDEO AMPLIFIERS CASE TO-92A THE BP391, BF392, BF393 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE 200V MINIMUM COLLECTOR-EMITTER BREAKDOWN VOLTAGE AND

ic marking B48

Abstract: e125 c100 C98-C99 A118-120 20e23 st d83
Contextual Info: 10 VIEW ON MATING SIDE ROW 1 2 B 4 5 E H H B B D B B H H C H H B B B A B B H H H H B B 6 7 8 H B B H H B B H B B H B B H B B H H B B H B B H H B B H B B H B B H B B H H B B H B B H H B B H BF BF H H B B H H BB BB H H BF BF H H BB BB H H B B H H BF BF H H B

FPT-48P-M19

Contextual Info: MBM29DL32TF/BF-70 Data Sheet Retired Product MBM29DL32TF/BF -70 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

BF 195 pin configuration

Abstract: Bf 353 BF998 BF998R f 4556 BF 998 526 8694 010
Contextual Info: BF 998 / BF 998 R TELEFUNKEN Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixer stages in UHF- and VHF-tuner Features D D D D D D High AGC-range

Contextual Info: SIEMENS BF 799W NPN Silicon RF Transistor • For linear broadband amplifier applications up to 500MHz • SAW filter driver in TV tuners Type Marking Ordering Code Pin Configuration BF 799W LKs Q62702-F1571 1= B Package 2=E 3=C SOT-323 Maximum Ratings Parameter

Q62702-F1571

Contextual Info: BF 799W NPN Silicon RF Transistor • For linear broadband amplifier applications up to 500MHz • SAW filter driver in TV tuners Type Marking Ordering Code Pin Configuration BF 799W LKs 1=B Q62702-F1571 Package 2=E 3=C SOT-323 Maximum Ratings Parameter Symbol

VSO05561

Contextual Info: BF 799W NPN Silicon RF Transistor 3
For linear broadband amplifier application up to 500 MHz
SAW filter driver in TV tuners 2 1 Type Marking BF 799W LKs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Value Unit

M2D068-BF

Abstract: M2D074-DF M4D094-HA A4D450-AP01 A4D420-AP02 W4D350-CR06 S4D420-AP02 W4D420-CP02 M4D068-DF 068-DF
Contextual Info: AC axial fans S-Range, Ø 200 - Material: sheet steel coated in black - Direction of rotation: counter-clockwise, seen on rotor - Type of protection: IP 44 2 *4D 200(1) M4D068-BF 3 *4S 200 M4S068-BF 4 (1) subject to alterations W A 230/400 230/400 230 230

Contextual Info: S IE M E N S BF 799W NPN Silicon RF Transistor • For linear broadband amplifier applications up to 500MHz • SAW filter driver in TV tuners Type Marking Ordering Code Pin Configuration BF 799W LKs Q62702-F1571 1=B Package 2 =E 3 =C SOT-323 Maximum Ratings

bf 469

Abstract: BF469 S10X1
Contextual Info: i m BF 469 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video-B-class p o w e r stages in TV receivers Besondere Merkmale: Features: • K om plem entär zu BF 470

SA611

Abstract: 29DL320
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20896-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL320TF/BF 70/80/10 • DESCRIPTION The MBM29DL320TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M

Contextual Info: DIMENSIONS BF Series BODY TYPE A BODY TYPE B B C D L 25 MH z 10 0M Hz NU MB ER UN IT S BO DY TY PE A PA RT Suppressors for Round Cables IMPEDANCE OHMS * Inches ± 0.04; mm ± 1.0 SERIES BF - FOR ROUND CABLES in. mm in. BF2223 mm in. BF1719 mm in. BF1835

29DL32BF

Abstract: MBM29DL32
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF 70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

FPT-48P-M19

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-2E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

FPT-48P-M19

Abstract: megabit
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-3E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20904-1E FLASH MEMORY CMOS 32 M 4 M x 8/2 M × 16 BIT Dual Operation MBM29DL32TF/BF-70 • DESCRIPTION The MBM29DL32TF/BF are a 32 M-bit, 3.0 V-only Flash memory organized as 4 M bytes of 8 bits each or 2 M words of 16 bits each. These devices are designed to be programmed in-system with the standard system 3.0 V

Contextual Info: NONLINEAR MODEL SCHEMATIC NE685M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 time seconds IS 8.98e-17 MJC 0.19 capacitance farads BF 107.1 XCJC inductance

SA31B

Abstract: SGA2 DS05 FPT-48P-M19 spansion date code marking SGA17
Contextual Info: MBM29DL32TF/BF-70 データシート 生産終息品 MBM29DL32TF/BF- 70 Cover Sheet 本製品は既に終息しておりますので新規設計へのご採用はご遠慮下さいますようお願いします。本データシートは参照及 び履歴目的でのみご利用願います。

BF 4176

Abstract: Temic 5567 BF988 9282 BF 145 Marking 9282 BF988 bf 671 BF 987
Contextual Info: BF 988 TELEFUNKEN Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. Applications Input- and mixerstages VHF- and UHF-tuners. Features D D D D D High AGC-range D Low feedback capacitance

Contextual Info: Series BF Split Ferrite Suppressors for Round Cables Electronic cables and wires, by virtue of their length-to-width ratios, are perfect natural antennas. In the presence of high speed microprocessor signals, cables will conduct, radiate and/or receive unwanted

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

Contextual Info: BF Series SUPPRESSORS Split Ferrite Suppressors for Round Cables Electronic cables and wires, by virtue of their length-to-width ratios, are perfect natural antennas. In the presence of high speed microprocessor signals, cables will conduct, radiate and/or receive unwanted

capacitor 100nk 100v

Abstract: BN27 Diode capacitor 100nk 63 smd marking BN27 smd marking KE 100nk* CAPACITOR 937 ke equivalent components transistor smd marking KE T 100nk smd marking Kk
Contextual Info: BF 01/02/07/06/05/04: Radial Leads BQ 01/02/07/06/05/04 Lead Free product available upon request CPM-83- pitch = 5.08mm (0.200") GENERAL DESCRIPTION Dielectric: Metallized polyester film (Polyethylene teraphtalate) Stacked-film Leads: Radial tin - plated wire