2sa1046
Abstract: 2SD436 BD133 BD878 2SC1013 2SC1943 BD419 2SC1014 IR425 2sc2168
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDX33B BDX33C* Darlington Complementary Silicon Power Transistors PNP BDX34B BDX34C* . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 typ. at IC = 4.0
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bdx33bbdx33c33c/34b220ab+13bdx34bbdx34ctip73b2sa10462sd436bd133bd8782sc10132sc1943bd4192sc1014ir4252sc2168
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BDX33D equivalent
Abstract: B0X33B b0x33c box33 BDX33 BDX33A BDX33B BDX33C BDX33D BDX34
Contextual Info: oï G E SOLID STATE 3875081 G E SOLID-STATE Darlington Power Translators »Ë^Ba7S0ôi □□vpsflG 3 0 1E ~ D 1T 17280 '3 3 “2L7 File Number 6 9 3 / BDX33, BDX33A, BDX33B, BDX33C, BDX33D r 10-Ampere N-P-N Darlington Power Transistors « TERMINAL DESIGNATIONS
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bdx33bdx33abdx33bbdx33c+7bdx33d10-amperebdx33d equivalentb0x33bb0x33cbox33bdx34
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BDX33D equivalent
Abstract: BOX33B RCA-BDX33 BDX33c equivalent
Contextual Info: oï G E SOLID STATE 38 75081 G E SOLID-STATE Darlington Power Translators 0 1E ~ d^3ö7S0öi □□vpsflü 3 17280 Ö’ T - 3 3 - 2 L 7 BDX33, BDX33A, BDX33B, BDX33C, BDX33D File Number 693/ r 10-Ampere N-P-N Darlington Power Transistors « TERMINAL DESIGNATIONS
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bdx33bdx33abdx33bbdx33c+7bdx33d10-ampereo-220abrca-bdx33bdx33d equivalentbox33bbdx33c equivalent
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BDX33c equivalent
Abstract: P6019 BDX33D equivalent X33B BDX33 69-6R
Contextual Info: BDX33, BDX33A, BDX33B, BDX33C, BDX33D HARRIS SEMICOND SECTOR SbE D File Number • 4 3 0 2 8 7 1 O D M O b l l S34 « H A S 10-Ampere N-P-N Darlington Power Transistors 7 ^ 3 3 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A B DX33, BDX33A
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bdx33bdx33abdx33bbdx33c+7bdx33d10-amperebdx33c equivalentp6019bdx33d equivalentx33b69-6r
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TIC106M SCR
Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers
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o-220ot-932m/tsp0904tic106m scr+9tic106d equivalenttip41c equivalenttip42c equivalentbd242 transistor equivalenttransistor equivalent of bu406tip36c equivalentbtb06-600tic126d equivalenttic116d equivalent
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TIC106D equivalent
Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
Contextual Info: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers
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o-220ot-932m/tsp0711tic106d equivalent+9tic106m scrbd249 equivalenttip41c equivalentbt137 equivalentreplacement tyn412tic225m equivalentmalaysia tic226dtic226d equivalenttic126m equivalent
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BDX43C
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D HARRIS SEMICOND SECTOR SbE P • File Number 694 4302271 0 0 4 0 ^ 7 T52 « H A S 10-Ampere P-N-P Darlington Power Transistors T -3 3 -3 1 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A BDX34, BDX34A
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bdx34bdx34abdx34bbdx34c+3bdx34d10-amperebdx43c
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bdx340
Abstract: BDX43C BPX34 32c52 BPX34C S2274 BDX34 equivalent
Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D File Num ber 10-Ampere P-N-P Darlington Power Transistors 694 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A BDX34, BDX34A Gain of 750 at 3 A (BDX34B, BDX34C, BDX34D) c (F LA N G E ) Ü Features:
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bdx34bdx34abdx34bbdx34c+9bdx34d10-amperebdx340bdx43cbpx3432c52bpx34cs2274bdx34 equivalent
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diagram DARLINGTON
Abstract: DX34C BDX34 equivalent DX34
Contextual Info: D l 3875081 G E SOLI D D lf | STATE BÛ7SDÛ1 01E 0 0 1 7 a a t 17286 4 I ” T -33~$f D Darlington Power Transistors_._ BDX34, BDX34A, BDX34B, BDX34C, BDX34D File Number 10-Ampere P-N-P Darlington
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bdx34bdx34abdx34bbdx34c+7bdx34d10-ampere3a75da1diagram darlingtondx34cbdx34 equivalentdx34
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2N3055 plastic
Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art
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but11aftip73btip74tip74a+15tip74btip75tip75atip75btip75c2n3055 plasticbut11af equivalentbu108npn power darlington transistors high voltage high icm to-247bdx54dbdx54bux98a2sc140bu326bu100
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BU108
Abstract: BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •
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tip47tip50mjd47mjd50+9tip73btip74tip74atip74btip75tip75abu108bu326bu100
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tip122 tip127 audio amp
Abstract: TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT BD226-BD227 tip122 tip127 audio board D45H111 3904 Transistor BU108 tip120 darlington TIP41 amplifier TIP121 TEXAS
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc
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tip120tip125tip121tip126+13tip122tip127220abtip122 tip127 audio amptip127 tip122 audio amplifier circuitbd226-bd227tip122 tip127 audio boardd45h1113904 transistorbu108tip120 darlingtontip41 amplifiertip121 texas
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MJL21194 equivalent
Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
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mjl21193mjl21194tip73btip74+14tip74atip74btip75tip75amjl21194 equivalentmjl21193 equivalentbux48a equivalent2n6107 equivalentbu108mj4502 pairbd140 npntransistor mjl211942n5981 pnp transistor2n3055 typical applications
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BU108
Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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bd438bd442bd437bd441+15tip73btip74tip74atip74btip75tip75abu1082sc7rca1c03to-126 high speed switching transistorbdx542sc19432sc1419bu326bu100
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bu806 REPLACEMENT
Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.
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220abbu806tip73btip74+15tip74atip74btip75tip75atip75btip75cbu806 replacementk 3569bu1082sd211nsp2100tl mje2955t2sc19432sc1419bu326
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MJE15020
Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment
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mje340tip73btip74tip74a+16tip74btip75tip75atip75btip75c2n6488mje15020dts423mje15033 replacement2sc243bd388-52sc1826bd2632sc1903se93022sa698
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pin configuration NPN transistor BD679
Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc
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bd675bd676bd675abd677+15bd677abd679bd679abd681tip73bpin configuration npn transistor bd6792sc101pin configuration npn transistor bd 677bu108tip120 equivalent2sc72n6052 equivalent2sc558bdx542sc1943
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2N5686 motorola
Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.
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2n56842n56852n5686tip73b+15tip74tip74atip74btip75tip75atip75b2n5686 motorola2n5685 equivalentbu108mj15024 mj15025audio amplifier 2n56862sa492sc140mj1000nsp2100
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BU108
Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS
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2n51942n51952n51912n5192+14tip73btip74tip74atip74btip75tip75abu1082sa1046driver amplifier tip31 transistorbdx54mje51902sb56bu326bu100
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BDV65B equivalent
Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors
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bdv65bbdv64btip73btip74+15tip74atip74btip75tip75atip75btip75cbdv65b equivalentbuv48 equivalentbu108tip127 pin details2sd424bdx54bu326bu100mje340
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2SA70
Abstract: BU108 2SA1046 2SC7 c 3198 transistor BU806 Complement BDX54 tip142 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6379* High-Power PNP Silicon Transistors *Motorola Preferred Device 50 AMPERE POWER TRANSISTORS PNP SILICON 80, 100, 120 VOLTS 250 WATTS . . . designed for use in industrial–military power amplifier and switching circuit
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2n63792n6274tip73btip74+15tip74atip74btip75tip75atip75b2sa70bu1082sa10462sc7c 3198 transistorbu806 complementbdx54tip142bu326bu100
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automotive ignition tip162
Abstract: 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.
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mj10012mjh10012tip73btip74+14tip74atip74btip75tip75aautomotive ignition tip1622sc3312n6556bu1082sa648mje130092sd1815 "cross referenceft47mj1000mj295
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automotive ignition tip162
Abstract: BU323A equivalent 2SA1046 BC337 rbe BU108 TIP102 Darlington transistor bc337 cross-reference 2SC190 replacement transistor BC337 BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323A NPN Silicon Power Darlington Transistor The BU323A is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. COLLECTOR • VCE Sat Specified at – 40_C = 2.0 V Max. at IC = 6 A.
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bu323a204aatip73btip74+15tip74atip74btip75tip75atip75bautomotive ignition tip162bu323a equivalent2sa1046bc337 rbebu108tip102 darlington transistorbc337 cross-reference2sc190replacement transistor bc337bu326
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transistor MJE243 equivalent
Abstract: mje15033 replacement MJE243 equivalent 2N3055 plastic MJE243 MOTOROLA BU108 mje243 PNP transistor motorola mj2268 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —
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mje243mje253tip73btip74+11tip74atip74btransistor mje243 equivalentmje15033 replacementmje243 equivalent2n3055 plasticmje243 motorolabu108pnp transistor motorola mj2268bu326bu100
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