BDB02B Search Results

Contextual Info: BDB02B Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).70 @I(C) (A) (Test Condition)1.0

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

jc 5010

Abstract: BDB02A BD802C BDB02B BDB02C BDB02D
Contextual Info: M OTOROLA SC 12E D I k3b?c!54 GGûSTll □ | XSTR S/ R F M A X IM U M RATINGS S y m b o l BDB BDB B D B BDB 0 2 A 0 2 B 0 2 C 02D R a tin g U nit Collector-Emitter Voltage VCEO 45 60 80 100 Vdc Collector-Base Voltage VcES 45 60 80 100 Vdc Em itter-Base Voltage

KT933

Abstract: 6ae diode DTL3502 KT626D KT626A 2sa1403d kt933B KELTRON diode MXR5583 KT820V1
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 15 20 Manufacturer See Index See Index See Index SemiconTech SemiconTech See Index See Index See Index See Index See Index TRSP4504 TRSP4504S TRSP4505 TRSP4505S TRSP4754S TRSP4755S TRSP5014 TRSP5014S TRSP5015