BD679, BD680 Search Results

BD675-BD677-BD679-BD681

Abstract: BD676-BD678-BD680-BD682 bd679 PNP transistor BD679 BD675 BD677 transistor transistor BD677 transistor BD681 BD677 BD681
Contextual Info: NPN BD675-BD677-BD679-BD681 PNP BD676-BD678-BD680-BD682 SILICON DARLINGTON POWER TRANSISTORS The BD675-BD677-BD679-BD681 are NPN eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. They are mounted in Jedec TO-126 plastic package.

BD680

Abstract: BD678 BD676 ic 313 BD678 equivalent to126 bd680
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darligton Power Transistors BD676/BD678/BD680 DESCRIPTION •With TO-126 package ·Complement to type BD675/BD677/BD679 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in

Contextual Info: _ J V BD676; 678 BD680; 682; 684 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit fo r audio and video output applications; SOT-32 plastic envelope. N-P-N complements are BD675, BD677, BD679, BD681 and BD683.

BD679

Abstract: BD675 BD680 T-988 BD676 BD678 BD682 BD684 D0344
Contextual Info: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA

bd679 PNP transistor

Abstract: BD679 BD680
Contextual Info: Power Transistors www.jmnic.com BD680 Silicon PNP Transistors Features ECB With TO-126 package In monolithic Darlington configuration This transistor is intended for use in medium power linar and switching applications Complement to type BD679 Absolute Maximum Ratings Tc=25

IC AL 6001 audio ic

Abstract: transistor 684 B0680 BD676 5559 transistor BD680 B0680 DIODE bd679 PNP transistor 684 k 100 BD675
Contextual Info: BD676; 678 J ^ BD680; 682; 684 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio and video output applications; SOT-32 plastic envelope. N-P-N complements are BD675, BD677, BD679, BD681 and BD683.

BD677

Abstract: 682 sot BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681
Contextual Info: BD677/A/679/A681 BD678/A/680/A/682 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration

bd679

Contextual Info: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA

pin configuration NPN transistor BD679

Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc

2N5192 BD441

Abstract: 2N4923 bd435 BD435/BD436 bf469 or equivalent darlington bd139 2N4921 2N4922 2N5190 2N5191
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

to126 case

Abstract: BD139 BD136
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

ST1803DFP

Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
Contextual Info: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D

Power Transistors TO-126 Case

Abstract: MJE240 MJE520 datasheet MJE520 equivalent mje521 equivalent MJE243 equivalent BD139 N BD234 BD683 MJE234
Contextual Info: Power Transistors TO-126 Case Top View TYPE NO. NPN 2N4921 2N4922 2N4923 2N5190 2N5191 2N5192 2N5655 2N5656 2N5657 2N6037 2N6038 2N6039 BD135 BD137 BD139 BD175 BD177 BD179 BD233 BD235 BD237 BD433 BD435 BD437 BD439 BD441 BD675 BD675A BD677 BD677A BD679 BD679A

BD676

Abstract: 684 k 100
Contextual Info: BD676; 678 BD680; 682; 684 PHILIPS INTERNATIONAL SbE D • 711002b 0045^00 7Ta M P H I N SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio and video output applications; SOT-32 plastic envelope. N-P-N complements are BD675, BD677, BD679, BD681 and BD683.

FE10E

Abstract: 8d679 BD676 BD680 BD675 BD678 BD679 BD682 BD684
Contextual Info: BD675; 677 BD679; 681; 683 PHILIPS INTERNATIONAL 5bE D • 711005b 0042^^2 7Ö2 M P H I N T- 3J-Z ? SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684.

d677a

Abstract: d676 D675A d681 d677
Contextual Info: SGS-THOMSON BD675/75A/77/ 77A/79/79A/81 BD676/76A/78/ 78A/80/80A/82 MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configu­ ration and are mounted in Jedec TO-126 plastic

SM 78A

Abstract: D675 LE 79A D676 BD675 BD675A BD676 BD676A BD677 BD677A
Contextual Info: SGS-THOMSON S i ;L Ì S lftB lD (S Ì BD 675/75A/77/77A/79/79A /81 B D 676/76A /78/78A /80/80A /82 MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN power transistors in monolithic Darlington configu­

philips BDV64A

Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR
Contextual Info: N AflER P H I L I P S / D I S C R E T E E5E D • bb53T31 D O ltiE l? b Hi T-& 1 -3-*? Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN TIP110 TIP111 TIP112 BD675 BD677 BD679 BD681 BD683 PNP fC (D C )0 ) V CEO

Contextual Info: v is s a s ? QoeaM si S G S - T U O M S O N î[L[lCT ^ [M D©S b B D 6 7 5 /7 5 A /7 7 /7 7 A /7 9 /7 9 A /8 1 B D 6 7 6 /7 6 A /7 8 /7 8 A /8 0 /8 0 A /8 2 S G S-THOMSON 3DE » MEDIUM POWER DARLINGTONS DESCRIPTION The BD675, BD675A, BD677, BD677A, BD679,

BD675

Abstract: BD679 BD678
Contextual Info: BD675; 677 ^ _ PHILIPS INTERNATIONAL J 5bE D • 711005b OGMSTbS 7ÖB M P H I N T - JJ-Z ? SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684.

BD680

Abstract: BD677 BD678A BD679 BD680A BD681 BD677A BD678 BD679A BD682
Contextual Info: BD6xxx Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment

BD679

Abstract: BD677 BD680 BD678 BD678A BD679A BD681 BD677A BD680A BD682
Contextual Info: BD6xxx Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment

BD679

Abstract: bd680a st bd68 BD677 BD677A BD678 BD678A BD679A BD680 BD680A
Contextual Info: BD6xxx Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment

BC 677

Abstract: Tfk 680 BD675 bc 681 BD677 BD681 BD 677 BD 681 2DIN125A 2mA80
Contextual Info: V BD 675 • BD 677 • BD 679 •BD 681 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Sehr hohe Stromverstärkung Features: • Very high current transfer ratio