BD534 G Search Results

BD534 G

Abstract: 8053 BD533 BD534 BD535 BD536 BD537 BD538
Contextual Info: DIL BD533,535, 537 BD534, 536, 538 BD533, BD535, BD537 BD534, BD536, BD538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR MIN DIM A G

D536

Abstract: BD536 D538 BD535B BD537
Contextual Info: SGS-THOMSON BD533/5/7 BD534/6/8 M ^mi©ïi@[il gS COMPLEMENTARY SILICON POWER TRANSISTORS . BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec

BD537

Abstract: BD535 db536 BD533 BD538 BD536 BD534 BD53
Contextual Info: BD533 BD535 BD537 BD534 BD536 BD538 COMPLEMENTARY SILICON POWER TRANSISTORS • BD534, BD535, BD536, BD537 AND BD538 ARE STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon Epitaxial-Base NPN power transistors in Jedec

BD534

Abstract: BD53B BD538 bd536 TRANSISTOR 536 B0533 TRANSISTOR BD538 fe 536 transistor b 536
Contextual Info: BD534/536/538 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to B0533, BD535 and BD537 respectively ABSO LU TE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Symbol BD534 Rating

BD535

Abstract: BD533 BD534 BD536 BD537 BD538
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package BD533, 535, 537 BD534, 536, 538 BD533, BD535, BD537 BD534, BD536, BD538 NPN PLASTIC POWER TRANSISTORS

Contextual Info: BD533, BD535, BD537 BD534, BD536, BD538 CDU BD533, 535, 537 BD534, 536, 538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A 3 C

BD533

Abstract: BD534 BD535 BD536 BD537 BD538
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD533, 535, 537 BD534, 536, 538 BD533, BD535, BD537 BD534, BD536, BD538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications

BD536

Abstract: BD537 BD538 BD533 BD534 BD535 BD534 G
Contextual Info: BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS n BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BD533, BD535, BD537 BD534, BD536, BD538 TO-220 Plastic Package BD533, 535, 537 BD534, 536, 538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications

BD537

Abstract: BD536 BD533 BD534 BD535 BD538
Contextual Info: BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS • BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec TO-220 plastic package, intented for use in

Contextual Info: rz 7 SGS-THOMSON Ä T# raoeœiILliera *® BD533/5/7 BD534/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS . BD534, BD535, BD536, BD537 AND BD538 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD533, BD535, and BD537 are silicon epitaxial-base NPN power transistors in Jedec

bd534

Abstract: transistor b 536 bd538
Contextual Info: BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BD533

Abstract: BD534 BD535 BD536 BD537 BD538
Contextual Info: BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

TRANSISTOR BD538

Contextual Info: BD534/536/538 BD534/536/538 Medium Power Linear and Switching Applications • Low Saturation Voltage • Complement to BD533, BD535 and BD537 respectively 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

BD53B

Abstract: bd536 BDS34 BD538
Contextual Info: BD533, BD534, BD535, BD536, BD537, BD538 Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors File Number 1236 TERM INAL DESIGNATIONS o General-Purpose Medium-Power Types for Switching and Amplifier Applications t : Features: • Low saturation voltages

BD536

Contextual Info: BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features • . BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

60V transistor npn 2a switching applications

Contextual Info: BD533/535/537 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Symbol BD533 Rating

BD536

Abstract: BD534 BD537 BD535 BD533 JESD97 BD533 st
Contextual Info: BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features • . BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain

Contextual Info: BD533, BD535, BD537 BD534, BD536, BD538 DIL BD533,535,537 BD534,536, 538 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1.15 1,40 3.75 3.88

GE 537

Abstract: BD533 BD535 BD537
Contextual Info: Inchange Semiconductor Product Specification BD533/535/537 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD534/536/538 ・Low saturation voltage APPLICATIONS ・For medium power linear and switching applications

BD534

Abstract: BD538 BD536
Contextual Info: SavantIC Semiconductor Product Specification BD534/536/538 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type BD533/535/537 ·Low saturation voltage APPLICATIONS ·For medium power linear and switching applications PINNING

FT 536

Abstract: BD538 k 536 BD534 BD536
Contextual Info: Inchange Semiconductor Product Specification BD534/536/538 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type BD533/535/537 ・Low saturation voltage APPLICATIONS ・For medium power linear and switching applications

Contextual Info: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • Complement to BD534, BD536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Symbol Collector Emitter Voltage : BD533

BD533

Abstract: BD537 TRANSISTOR BD533 BD534 BD535 BD536 BD538 101b1 60V transistor npn 2a switching applications
Contextual Info: BD533/535/537_ NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS LOW SATURATION VOLTAGE • C om plem ent to BD534, BD 536 and BD538 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD535 60 V : BD537