BD180 MOTOROLA Search Results

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Abstract: MOTOROLA TRANSISTOR BD179 BD180
Contextual Info: MOTOROLA Order this document by BD180/D SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing

TRANSISTOR motorola 416 IC

Abstract: BD179 BD180 BD180 motorola
Contextual Info: MOTOROLA Order this document by BD180/D SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing

Contextual Info: MOTOROLA Order this document by BD180/D SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . d e s ig n e d fo r use in 5.0 to 10 W att au d io a m p lifie rs and d riv e rs u tiliz in g

TRANSISTOR motorola 416 IC

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio am plifiers and drivers utilizing complementary or quasi complementary circuits.

BU108

Abstract: 2SD1816 BDX54 motorola MJ3000 MJD42C equivalent BU326 BU100 2N5631
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD180 Plastic Medium Power Silicon PNP Transistor 3.0 AMPERES POWER TRANSISTOR PNP SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

K1461

Abstract: BD180 transistor with gain 10 BD176 BD179 BD176 motorola
Contextual Info: MOTO RO LA SC XSTRS/R 1EE D § F MOTOROLA 0004715 b | BD176,-6,-10,-16 BD180,-6,-10 SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR 3.0 AMPERES POWER TRANSISTOR PNP SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers

BD179

Abstract: BD179-10 BD180 NPN bipolar junction transistors max hfe 2000
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 B D 179-10 P lastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

B0139

Abstract: b0135 bd140 cross reference TRANSISTOR B0135 NPN TRANSISTOR NPN B0135 BD232 motorola power transistor to-126 BD167 NPN/B0139-16 BD169
Contextual Info: MOTOROLA SC XSTRS/R F 4fc>E D • b3b?254 OQT B H D ' l 0 «MOTb T ~ $2> ~ 0 3 TABLE 8 - PLASTIC TO-225 Type (Formerly TO-126 Type) STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE yggw STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 77-07 (TO-225AA) Resistive Switching

BD179

Abstract: transistor d179 TRANSISTOR motorola 416 IC
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use ¡n 5.0 to 10 Watt audio am plifiers and drivers utilizing complementary or quasi complementary circuits.

j139

Abstract: 0395 ADC BD179 BD180 3268 127 D TRANSISTOR H127
Contextual Info: motorola x s t r s /r sc 12E D § b3b7SS4 QQÖ4713 2 | f MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM POWER SILICON NPN TRANSISTOR 3.0 AMPERES POWER TRANSISTOR NPN SILICON . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

Contextual Info: MOTOROLA Order this document by BD179/D SEMICONDUCTOR TECHNICAL DATA BD179 B D 179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . d e s ig n e d fo r use in 5.0 to 10 W att au d io a m p lifie rs and d riv e rs u tiliz in g

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

MJ3001 equivalent

Abstract: MJ3000 equivalent 2sc1096 equivalent BU108 MJ3000 circuit MJ2955 2n3055 200 watts amplifier BDX54 MJ2501 MJ2955 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ2955 See 2N3055 MJ2955A (See 2N3055A) Medium-Power Complementary Silicon Transistors MJ2500 . . . for use as output devices in complementary general purpose amplifier applications. MJ2501* • High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc

motorola MJ15001

Abstract: BU108 equivalent to tip162 BDX54 D45H11 equivalent replacement 2sd217 BU326 BU100 REPLACEMENT BD139
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —

2SC105

Abstract: 2sd718 amplifier 2N4923 MOTOROLA bd139 equivalent transistor 2SA1046 2SC1629 equivalent bd139 Complement ST BDW83C 2SC108 BU326A equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N4921 thru 2N4923* Medium-Power Plastic NPN Silicon Transistors . . . designed for driver circuits, switching, and amplifier applications. These high–performance plastic devices feature: *Motorola Preferred Device • Low Saturation Voltage — VCE sat = 0.6 Vdc (Max) @ IC = 1.0 Amp

All similar transistor 2sa715

Abstract: 2N3055 BU108 transistor BC 153 2SA1046 BU326 BU100 Transistor cross reference
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD243B BD243C* PNP BD244B BD244C* Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE sat = 1.5 Vdc (Max) @ IC = 6.0 Adc

BU108

Abstract: 2SC1629 equivalent BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX41 SWITCHMODE Series NPN Silicon Power Transistor 15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS . . . designed for high speed, high current, high power applications. • Very fast switching times:

2SA1046

Abstract: 380 darlington to3 ibm REPLACEMENT BD139 BU326 BU108 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX85 SWITCHMODE NPN Silicon Power Transistors 2 AMPERES POWER TRANSISTOR NPN SILICON 450 VOLTS 50 WATTS The BUX85 is designed for high voltage, high speed power switching applications like converters, inverters, switching regulators, motor control systems.

mje15033 replacement

Abstract: BU108 TIP41B MJE2482 x 0602 ma 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE341 MJE344 Plastic NPN Silicon Medium-Power Transistors 0.5 AMPERE POWER TRANSISTORS NPN SILICON 150 – 200 VOLTS 20 WATTS . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

BU108

Abstract: TIP105 Darlington transistor BDX54 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE2360T MJE2361T NPN Silicon High-Voltage Transistor 0.5 AMPERE POWER TRANSISTORS NPN SILICON 350 VOLTS 30 WATTS . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage —

MJ15023 EQUIVALENT

Abstract: MJ15024 MJ15025 BU108 2SC1943 2SC1419 BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *Motorola Preferred Device • High Safe Operating Area 100% Tested —

mje15033 replacement

Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver

Circuit details of BD237 equivalent

Abstract: BD237-10 BD237 similar BU108 bd237 equivalent 2SC7 bd237 pin assignment 2SD424 2SC495 BUX98A
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD237 Plastic Medium Power Silicon NPN Transistor 2.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 25 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

bd135 TRANSISTOR REPLACEMENT GUIDE

Abstract: transistor Bd 458 transistor BC 56 2N5981 pnp transistor BD135-BD137-BD139 BD139 PIN DATA BU108 transistor BD 325 BD139-25 mje13005 complementary
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc