BD081 Search Results

BD0810J50100AH

Contextual Info: Model BD0810J50100AHF Rev A Ultra Low Profile 0805 Balun 50Ω to 100Ω Balanced Description The BD0810J50100AHF is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the

Contextual Info: Model BD0810J50200AHF Rev A Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced Description The BD0810J50200AHF is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the

0201 capacitor footprint

Abstract: ceramic capacitor footprint 0201 dimension 0201 footprint 1100 Balun
Contextual Info: Model BD0810N50100A00 Rev A Ultra Low Profile 0404 Balun 50Ω to 100Ω Balanced Description The BD0810N50100A00 is the worlds smallest and highest performance low profile sub-miniature unbalanced to balanced transformer targeted at the 900MHz ISM bands as well as the low band WCDMA / GSM markets and designed

BD0810J50200A00

Contextual Info: Model BD0810J50200AHF Rev A Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced Description The BD0810J50200AHF is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the

BD0810J50100AHF

Contextual Info: Model BD0810J50100AHF Rev A Ultra Low Profile 0805 Balun 50Ω to 100Ω Balanced Description The BD0810J50100AHF is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the

BD0810J50100A00

Contextual Info: Model BD0810J50100A00 Rev C Ultra Low Profile 0805 Balun 50Ω to 100Ω Balanced Description The BD0810J50100A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the GSM

Contextual Info: BD081R Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.1.0k @I(C) (A) (Test Condition)20

BD0810J50150A00

Abstract: BD0810J50150A
Contextual Info: Model BD0810J50150AHF Rev A Ultra Low Profile 0805 Balun 50Ω to 150Ω Balanced Description The BD0810J50150AHF is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the

Contextual Info: Model BD0810J50100A00 Rev B Ultra Low Profile 0805 Balun 50Ω to 100Ω Balanced Description The BD0810J50100A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the GSM

Contextual Info: Model BD0810J50100AHF Rev B Ultra Low Profile 0805 Balun 501 to 1001 Balanced Description The BD0810J50100AHF is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the

Contextual Info: Model BD0810J50100A00 Rev A Ultra Low Profile 0805 Balun 50Ω to 100Ω Balanced Description The BD0810J50100A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the GSM

Contextual Info: BD081RS Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.1.0k @I(C) (A) (Test Condition)20

Contextual Info: Model BD0810J50200A00 Rev A Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced Description The BD0810J50200A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the GSM

Contextual Info: BD081 Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.1.0k @I(C) (A) (Test Condition)20

0201 capacitor footprint

Contextual Info: Model BD0810N50100AHF RevA Ultra Low Profile Halogen Free 0404 Balun 50Ω to 100Ω Balanced Description The BD0810N50100AHF is one of the world’s smallest and highest performance, halogen free, low profile sub-miniature unbalanced to balanced transformer targeted at the 900MHz ISM bands as well as the low band WCDMA /

BD0810J50150A00

Contextual Info: Model BD0810J50150A00 Rev B Ultra Low Profile 0805 Balun 50Ω to 150Ω Balanced Description The BD0810J50150A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the GSM

BD0810J50200A00

Contextual Info: Model BD0810J50200A00 Rev B Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced Description The BD0810J50200A00 is a low profile sub-miniature balanced to unbalanced transformer designed for differential inputs and output locations on next generation wireless chipsets in an easy to use surface mount package covering the GSM

Contextual Info: BD081S Transistors Darlington Half Bridge Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)125õ h(FE) Min. Current gain.1.0k @I(C) (A) (Test Condition)20

Contextual Info: LTC6945 Ultralow Noise and Spurious 0.35GHz to 6GHz Integer-N Synthesizer DESCRIPTION FEATURES n n n n n n n n n n n n n n Low Noise Integer-N PLL 350MHz to 6GHz VCO Input Range –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise

Contextual Info: HMC630LP3 / 630LP3E v00.1007 Typical Applications Features The HMC630LP3 E is ideal for: Continuous Phase Control: 360° • Wireless Infrastructure HPA & MCPA Error Correction Continuous Gain Control: 40 dB • Pre-Distortion or Feed-Forward Linearization

LTC6948

Abstract: 4910G
Contextual Info: LTC6948 Ultralow Noise 0.37GHz to 6.39GHz Fractional-N Synthesizer with Integrated VCO Description Features Low Noise Fractional-N PLL with Integrated VCO n No ∆-∑ Modulator Spurs n 18-Bit Fractional Denominator n –226 dBc/Hz Normalized In-Band Phase Noise Floor

2.4ghz lnb

Abstract: 1M710S 1G1304-30 XC0900A-03S xc1900a-03s BD2425J50100A00 3A425 B0011E75300A00 diplexer gsm umts 900 stripline power combiner splitter
Contextual Info: Selection Matrix 3 dB Hybrid Couplers Model Number Package Size [Inch] Freq. Band [MHz] Ins. loss [dB max] Isolation [dB min] VSWR [max:1] ± Amp. Bal. [dB max] 90 ± Ph. Bal [deg. max] Avg. Power [W max] XC0450A-03 XC0450L-03

UMX-586-D16-G

Abstract: se136 15 GHz microwave modulator 7dBm REG03 crystek vco in rf pll 3656 BB LTC6945IUFD LTC6945 J561 smt capacitor R 10k 227
Contextual Info: LTC6945 Ultralow Noise and Spurious 0.35GHz to 6GHz Integer-N Synthesizer DESCRIPTION FEATURES n n n n n n n n n n n n n n Low Noise Integer-N PLL 350MHz to 6GHz VCO Input Range –226dBc/Hz Normalized In-Band Phase Noise Floor –274dBc/Hz Normalized In-Band 1/f Noise

LTC5588-1

Abstract: LTC6947
Contextual Info: LTC6947 Ultralow Noise 0.35GHz to 6GHz Fractional-N Synthesizer Description Features Low Noise Fractional-N PLL n No ∆Σ Modulator Spurs n 18-Bit Fractional Denominator n 350MHz to 6GHz VCO Input Range n –226dBc/Hz Normalized In-Band Phase Noise Floor