BD 750 Search Results

bow 94c

Abstract: box 53c BOX 53C IC CSI 24C bdx 679 BD NPN transistors bd* to-220 bdx 94c TO-126 BD PNP
Contextual Info: POWER TRANSISTORS — > o m o _u c E UJ IL o o ur> £a an d < < > X CO _o E ro BD 675A BD 676A BD 677 BD 678 BD 677A BD 678A BD 679 BD 680 BD 679A BD 680A BD 681 BD 682 BDW 23* BDW 24* BDW 23A* BDW 24A* BDW 23B* BDW 24B* BDW 23C* BDW 24C* BDW 93* BDW 94*

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

B0646

Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
Contextual Info: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington

bd 640

Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
Contextual Info: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington

transistor BD 680

Abstract: bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243
Contextual Info: 2SC 3> m fl23SbüS QOQMBT'i 3 MSIEfi PNP Silicon Darlington Transistors T-33- •31 BD 676 BD 678 BD 680 SIEMENS AKTIENGESELLSCHAF143" Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibase power darlington transistors

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

transistor BD 677

Abstract: BD 675 BD675 677d
Contextual Info: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington

BD 649

Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650
Contextual Info: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

lem HA 10000

Abstract: BDW23 lem HA 100MA 45 V NPN BDW23A BDW23B BDW23C BDW24 BDW24A BDW24B
Contextual Info: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit 45 V : BD W 23A

Contextual Info: BDW23/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 24, BD W 24A, BD W 24B and BD W 24C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD W 23A 60

93c100

Contextual Info: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 94, BD W 94A, BD W 94B and BD W 94C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit 45 V : BD W 93A

BD 650

Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
Contextual Info: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage

Siemens 1836

Contextual Info: 2SC D • T-33-29 ô53SbOS QQQMHIB 4 « S I E 6 . BD 861 BD 863 BD 865 NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF 5C 04^ 13 ° Epibase p o w e r d arlington transistors 1 5 W BD 8 6 1 , BD 8 6 3 , and BD 8 6 5 are monolithic silicon NPN epibase power darlington transistors

Contextual Info: BDW24/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 23, BD W 23A, BD W 23B and BD W 23C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollecto r E m itter V oltage : BD W 24

BDW93C

Abstract: BDW93 NPN Transistor TO220 VCEO 80V 100V bdw93c applications BDW93C TRANSISTOR 100MA 45 V NPN BDW94 BDW93A BDW93B BDW94A
Contextual Info: BDW93/A/B/C NPN EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR HAMMER DRIVERS, AUDIO AMPLIFIERS APPLICATIONS • C om plem ent to BD W 94, BD W 94A, BD W 94B and BD W 94C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector E m itter V o lta g e : BD W 93

transistor BD 680

Abstract: transistor BD 677 bd678 TRANSISTOR Bd 137
Contextual Info: ESC » • flS3 5 bOS QOOMB'îT 3 « S I E G T—33 - 3 1 BD 676 BD 678 ' BD 680 PNP Silicon Darlington Transistors SIEMENS A K T I E N G E S E L L S C H A F 143" ° Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibasepower darlington transistors

BD865

Abstract: BD861 ms 102y Q62702-D956 Q62702-D958 Q62702-D960
Contextual Info: 2SC D • T-33-29 ô53SbOS QQQMHIB 4 « S I E 6 . BD 861 BD 863 BD 865 NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF 5C 04^ 13 ° E p ib a se p o w e r d a rlin g to n tra n s isto rs 15 W BD 861, BD 863, and BD 86 5 are m onolithic silicon NPN epibase pow er darlington transistors

BD 677

Abstract: BD 675 bd 679 BD NPN transistors bd675 BD677A K 679 M 675 F bd679a darlington bd
Contextual Info: BD 675,A BD 6 7 7 ,A BD 679,A NPN SILICON DARLINGTON TRANSISTORS, EPITAXIAL BASE TR A N S IS TO R S D A R L IN G T O N S IL IC IU M NP N , B A S E E P IT A X IE E Compì, of BD 676, A ; BD 678, A ; BD 680, A PRELIM INARY DATA N O T IC E PR E L IM IN A IR E

diode sg 89a

Abstract: A1703 MMBD1703A sg 87a A1705 mmbd1701-1705 MMBD1704A MMBD1701 MMBD1701A MMBD1703
Contextual Info: Semiconductor'" MMBD1701/A 1 1703/A 1 1704/A / 1705/A _S_ 85 m h- M ARKING M M BD 1701 M M BD1703 M M BD1704 M M BD1705 SOT-23 85 87 88 89 M M BD 1701A M M BD 1703A M M BD 1704A M M BD 1705A 85A 87A 88A 89A High Conductance Low Leakage Diode Sourced from Proce ss 1T.

BD 862

Contextual Info: " 2SC D • 023SbOS 0004417 1 « S I E 6 r T-33“31. PNP Silicon Darlington Transistors j BD 862 BD 864 SIEMENS AKTIENGESELLSCHAF ° 80866 E p ib ase p o w e r d a rlin g to n tra n sisto rs 15 W BD 862, BD 864, and BD 866 are monolithic silicon PN P epibase power darlington transistors

BDW94C

Abstract: 300f 2 3a BDW94 300f diode bdw93c applications BDW93 BDW93A BDW93B BDW93C BDW94A
Contextual Info: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD W 93, BD W 93A, BD W 93B and BD W 93C respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector E m itter Voltage Sym bol

BO677

Abstract: transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242
Contextual Info: ESC D • 023SbOS 0004315 b ■ S I E G NPN Silicon Darlington Transistors SIEMENS A K T I E N G E SE LL SC H AF Î5 C T-33-29 °*3 9 5 ~ BO 675 BD 677 BD 679 D Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington

Contextual Info: BDW94/A/B/C PNP EPITAXIAL SILICON TRANSISTOR POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD W 93, BD W 93A, BD W 93B and BD W 93C respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollecto r E m itter V oltage Sym bol

DIODE 3LU

Abstract: D959 Q62702-D961 Q62702-D959 3lu diode BD 862 Diode 864
Contextual Info: " 2SC D • 023SbOS 0004417 1mSIEG r T-33“31. ; PNP Silicon Darlington Transistors SIEMENS Epibase BD 862 AKTIENGESELLSCHAF ° - ! p o w e r d arlin g to n transistors 1 5 W | BD 8 6 2 , BD 8 6 4 , and BD 8 6 6 are monolithic silicon PNP epibase power darlington transistors