BD 551 Search Results

bd 551

Abstract: BD-E401RD BD-E311RD BD-E312RD BD-E313RD BD-E314RD BD-E315RD BD-E315RE BD-E316RD BD-E31DRD
Contextual Info: Part No. Digit Size 0.30" Dual-Digit 0.36" Dual-Digit 0.39" Dual-Digit 0.40" Dual-Digit 0.40" Dual-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BD-E311RD BD-E315RD BD-E315RE BD-E312RD BD-E313RD BD-F311RD BD-F315RD BD-F315RE BD-F312RD BD-F313RD

BD-E401RD

Abstract: BD-E311RD BD-E312RD BD-E313RD BD-E314RD BD-E315RD BD-E315RE BD-E316RD BD-E31DRD BD-E321RD
Contextual Info: SINCE 1981 Part No. Digit Size 0.30" Dual-Digit 0.36" Dual-Digit 0.39" Dual-Digit 0.40" Dual-Digit 0.40" Dual-Digit Absolute Maximum Ratings Chip Common Anode Common Cathode BD-E311RD BD-E315RD BD-E315RE BD-E312RD BD-E313RD BD-F311RD BD-F315RD BD-F315RE BD-F312RD

BD-E324RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-E324RD SINCE 1981 ● Features : ● 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BD-F326RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-F326RD SINCE 1981 ● ● Features : 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BD-F322RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-F322RD SINCE 1981 ● Features : ● 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

BD-E323RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-E323RD SINCE 1981 ● Features : ● 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-A402ND-CAP SINCE 1981 ● Features : 1. 0.40 inch 10.16mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: MQ CONNECTOR 2,0m m Bd^4ohdM C* * ; *„w> «* - <• V- T.-1' .079" pitch Features-• Back-up support spring construction Each socket contact in this protected entry connector consists of two independently functioning and redundant contact spring

Contextual Info: J BDV65; 65A BDV65B; 65C v _ _ SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio output stages and general am plifier and switching applications. PNP complements are BD V 64, 64B and 64C.

BD-E326RD

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-E326RD For : 高詰 SINCE 1981 ● Features : ● 1. 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

display 7 segments

Contextual Info: BRIGHT LED ELECTRONICS CORP. BD-E32BJRD SINCE 1981 ● 1. Features : ● Package Dimensions : 0.36 inch 9.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.

Contextual Info: SUNCON • 12 5 t!, 2,000 to 4,000hrs. • Solvent proof within 5 minutes • Specifications Items Condition Rated voltage (V) Surge voltage (V) Specifications CE-BE CE-BD CE-BS CE-BSS CE-FE Room temperature Category temperature range (C) - Capacitance tolerance (%)

LLR06

Contextual Info: BD R esistors Rectangular Chip Temperature-sensitive Resistors Type R ated dissipation 70 C Maxim um w orking voltage (V) Resistor temperature coefficient (ppm/ C) R esistance tolerance Resistance range MTSR18 1/20W (0 05W) 50 + 15001 150 J (15% ) 5.1kU, 10 k ii

Contextual Info: Note: All part numbers are RoHS Compliant. BUCHANAN Terminal Blocks 0.375” [9.53] Pitch, Series JC6 JC6-P107-03 Ordering Information JC6 - P 1 07 - 06 A Material & Finish D E B Terminal Style C = Non Feed Thru E = Extended Circ. Bd. F = Quick Connect, .187

Contextual Info: 27.0-31.0 GHz GaAs MMIC Power Amplifier P1027-BD March 2009 - Rev 11-Mar-09 Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.5 dBm Saturated Output Power +43.0 dBm Output Third Order Intercept OIP3

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

2061 D

Abstract: Y060 BD 147
Contextual Info: M IL-T-55155 Terminals -~| ORDER BY PART NO. h D . NOM. 2030 A BD THICK MTG HOLE .053 .031 +.003 .062 .084 .062 .064 2030 C DIA. .115 .094 -.001 .125 DIA. .147 M H .-Ï - 5 5 I 5 5 / 1 M O . II. 1 2 .& SWAGE TOOL L .0 9 4 D IA . .031 D IA . D * ;o ° 5 J / 0 2 ° -

W9394

Abstract: W93B darlington bd
Contextual Info: r Z 7 SGS-THOMSON “ 7# BDW93/A/B/C BDW94/A/B/C NPN/PNP POWER DARLINGTONS DESCRIPTION The BDW93, BDW93A, BD W 93Band BDW 93C are silicon epitaxial-base NPN transistors in monolithic Darlington configuration and are mounted in Jedec TO-220 plastic package. They are intended for use

Contextual Info: 7 THIS DRAWING 15 UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. REVISIONS DIST 26 BD LTR B C D DESCRIPTION RLSE -1 PER NPR 5456 WAS 95-4264-20 REV PER EC REV PER EC REV PER EC REV PER EC 0410-95-96 0410-198-97

BM 1313

Abstract: 787761-2
Contextual Info: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. BD REVISIONS DIST 39 LTR B DIA B D 4 PLC WAS 96-3936-2-1 & -2 REV PER EC 0420-114-96 RLSE -3 AND REVISED PER O -A- 0 9 NAY 9G DB RW 21

BM 1313

Abstract: 16298 787745
Contextual Info: 7 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 4 ,19 LOC ALL RIGHTS RESERVED. DIST BD R E V ISIO N S 39 LTR B C D DATE DUN APVD 1Û NAY 9G DB RW 20 MAY 96 21 NAY 97 CR RPW DB DK DB BM I 5 SEP 97 DB BM 29 JUL 98 PB

BD135-BD137-BD139

Abstract: bd139 BD139 amplifier BD139I st BD139 BD135,BD137,BD139 BD135 Toshiba Bd135 st BD137 toshiba
Contextual Info: "st, TOSHIBA {DISCRETE/OPTO} SILICON NPN EPITA X IA L TYPE PCT PROCESS 9097250 TO SH IBA DÊj| TOTVSSD OQOÖObfl S B D 1 3 7 BD 139I 5ôC (D ISCR ETE/O PTO ) 08Û68 o r- MEDIUM POWER AMPLIFIER APPLICATIONS. 3 3 ~ û 5j Unit in mm 7.9 MAX, FEATURES: . Designed for Complementary Use with BD136, BD138

Contextual Info: SUNCON o > •§ 5 g 3. 2. 5 S | CO 3 m a3 CD % o • 10 5 t!, 1,000 to 2,000hrs. • Solvent proof within 2 minutes ■ Specifications Items Condition Rated volta ge (V) Surge vo lta g e (V) Specifications 6 .3 10 16 25 35 50 8 .0 13 20 32 44 63 CE-BE CE-BD

Contextual Info: 4 T H I S DRAWING 7 R E L E A S E D FOR P U B L I C A T I O N I S U N P U B L IS H E D . CO PYRIGHT BY AMP INCORPORATED. 19 2 3 ,19 LOC AL L R IG H T S R E S E R V E D . BD D IST REVISIONS 26 DESCRIPTION LTR RELEASED -1 4 . 0 0 [ . 551 ] -20 0 0 [ .787]