BD 435 Search Results

BD NPN transistors

Abstract: BD 440 NPN transistors bdw 36 BD PNP BD 440 PNP transistors 434 NPN transistors BD 909 bd 911 BDw 32 LT 442
Contextual Info: POWER TRANSISTORS continued > < > > m o _u UJ > o an c e h i u. _c d Cï> > < X ca E > BD 433 BD 434 BD 435 BD 436 BD 437 BD 438 BD 439 BD 440 BD 441 BD 442 BD 533 BD 534 BD 535 BD 536 BD 537 BD 538 BD 663 BD 664 BD 705 BD 706 BD 707 BD 708 BD 709 BD 710

SDT 9202

Contextual Info: fK> \Pj F Q W f i P_t mmS.A. TYPE NPN PNP BD 135 BD136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 $ BD 239 $ BD 240 $ BD 239A $ BD 240A $ BD 239B $ BD 240B $ BD 239C $ BD 240C $ BD 241 $ BD 242 $ BD 241A £ BD 242A

transistor d325

Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285
Contextual Info: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector

bd437 siemens

Abstract: transistor d437 D437 transistor bd 439
Contextual Info: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase

BO 649

Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN
Contextual Info: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington

BD 242 transistors

Contextual Info: BD 242 • BD 242 A • BD 242 B FNP SILICON EPITAXIAL BASE POWER TRANSISTORS "% ""m m ' w W . CASE T0-220B THE BD 242, BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED POR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,

241A

Abstract: 241B BD241 BD241A BD241B BD NPN transistors 312c
Contextual Info: vi BD 241 • BD 241A ■ BD 241B NPN SILICON EPITAXIAL BASE POWER TRANSISTORS MICRO ELECTRONICS CASE T0-220B THE BD 241, BD 241A AND B D '241B ARE NPN SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT STAGES IN AUDIO AMPLIFIERS. THE BD 241,

BD 649

Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Contextual Info: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington

power transistor mrc 438

Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Contextual Info: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase

bo434

Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Contextual Info: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages

transistor 438

Abstract: TRANSISTOR BD 436 A8550 BD433B TRANSISTOR BD 437 TRANSISTOR 434
Contextual Info: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO -126 • Com plem ent to BD433, B D 435 and BD 437 respectively ABSO LU TE MAXIMUM RATINGS Sym bol C h ara cte ristic Collector B a s e Voltage : BD 434 : BD 436

IR 436

Abstract: bf 434 amplificateur FT 434 512-BD deflexion vertical tv deflexion BD436
Contextual Info: BD 434 BD 436 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS S IL IC IU M PNP, BASE E P ITAXIES Compì, of BD 433, 435 PR E LIM IN A R Y DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­

tfk 434

Abstract: tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A
Contextual Info: BD 433 *BD 435 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannungen speziell für Autoradiobetrieb • Hohe Stromverstärkung

D242B

Abstract: 3120c BD240C BD242 BD242A BD242B T0-22OB 8700bo
Contextual Info: b U Z4Z • D U ^ M " DU PÏÏP SILICON EPITAXIAL BASE POWER TRANSISTORS I ; m ic r o e l e c t r o n i c s CASE T0-22OB THE BD 24 2 , BD 242A AND BD 242B ARE PNP SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR SWITCHING, DRIVER AND OUTPUT SATAGES IN AUDIO AMPLIFIERS. THE BD 242,

BD436

Abstract: BD 434 B0436 d341 LT 436 BD434
Contextual Info: BD 434 - BD 436 'W Silizium-PNP-Epibasis-Leistungstransistoren Silicon PNP Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannung speziell für Autoradiobetrieb Features: • Low supply voltage especially tor automobil radio

BD 139 N

Abstract: TOP-66 BD677N B0536 BD 139 140 B0680 BD139N BD139 SOT PL b0436
Contextual Info: Inventory o f discrete standard Types 9.1. Transistors Type P = PNP (N = NPN) Collector base reverse voltage V'oso ; v (V ces); BD 136 BD 137 Current gainbandw idth product / c; A fT; MHz P -45 -1 .5 50 N 60 -6 0 80 1.5 -1 .5 1.5 -80 45 -1 .5 2 50 50 >50

Contextual Info: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD433, BD 435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit - 22 V BD436 - 32 V BD438 - 45 V - 22 V BD436

transistor bd438

Abstract: BD436 TRANSISTOR 436 BD434 U501 TRANSISTOR bd436 BD433 BD435 BD437 BD438
Contextual Info: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD433, BD 435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol Rating Unit - 22 V BD436 - 32 V BD438 - 45 V - 22 V BD436

Contextual Info: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD434, BD 436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage C ollecto r E m itter Voltage C ollecto r E m itter Voltage

BD437

Abstract: 100MA 45 V NPN BD433 BD434 BD435 BD436 BD438 transistor bd435
Contextual Info: BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD434, BD 436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage C ollector E m itter Voltage C ollector E m itter Voltage

NT5TU128M8DE

Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
Contextual Info: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6

chime

Abstract: STK 402 series chime 4 tone voice record to SD card SDV-128P LKEH-402FV-RYGB stk 402 transistor bd 202 LKEH-302FE-RYG LKEH-202
Contextual Info: 1598-2012.qxp:QuarkCatalogTempNew 9/4/12 4:32 PM Page 1598 ENCLOSURES INTERCONNECT TEST & MEASUREMENT 18 Annunciators, Alarms, Lighting and Annunciator Combination BD Series Audible Alarm ᭤ Field Programmable with MP3 Sound Files and Optional SD Card* ᭤ Adjustable Sound Level from 0 dB to

Contextual Info: EC centrifugal fan R1G175-AB63-02 backward curved, single inlet ebm-papst Mulfingen GmbH & Co. KG Bachmühle 2 D-74673 Mulfingen Phone: +49 0 7938/81-0 Fax: +49(0)7938/81-110 info1@de.ebmpapst.com www.ebmpapst.com Nominal data Type R1G175-AB63-02 Motor M1G055-BD

Contextual Info: M-957 DTJIIIF Receiver *v detection of a valid end-of-signal pause or by the CLEAR input. An early signal presence indicator, BD, facilitates applications requiring tone blocking. The data outputs operate with simple logic circuits or microprocessors, and are threestate enabled to facilitate bus-oriented architectures.