BD 143 Search Results

transistor BD 680

Abstract: transistor BD 677 bd678 TRANSISTOR Bd 137
Contextual Info: ESC » • flS3 5 bOS QOOMB'îT 3 « S I E G T—33 - 3 1 BD 676 BD 678 ' BD 680 PNP Silicon Darlington Transistors SIEMENS A K T I E N G E S E L L S C H A F 143" ° Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibasepower darlington transistors

8D139

Abstract: bd139 B0139 TRANSISTOR BD 137 transistor BD 378 TRANSISTOR BD 137-10 transistor a110 B0137 D106-V2 BD135
Contextual Info: 2SC D • 053SbOS 0004332 4 « S I E G ^ - NPN Silicon Transistors ■ T ^ Ï'O T — BD 135 BD 137 SIEMENS AKTIEN6ESELLSCHAF- BD 139 For AF driver and ou tp u t stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126

BD 139 N

Abstract: transistor BD 141 bd139
Contextual Info: 2SC D • 023Sfc.GS 0QQ4332 4 c NPN Silicon Transistors SIEG D: BD 135 BD 137 BD 139 SIEMENS AKTIEN6ESELLSCHAF For AF driver and output stages o f m edium performance BD 135, BD 137, and BD 139 are epitaxial NPN silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to

transistor bd 126

Abstract: TRANSISTOR BD 139 transistor BD 135 BD139 TRANSISTOR BC 137 TRANSISTOR BD 137 BD 139 N bD 106 transistor TRANSISTOR BC 136 transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC IN electronic 1?E D • Ô^SQO^b O D Q TB 'îS BD 135 • BD 137 • BD 139 Creativeledinotoe*^ T -^ -O S * Silicon NPN Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

alc860

Abstract: ALC860 schematics rqa200n03 rqa130n03 hy5ps561621afp-25 OZ128TN AF-15 P71EN0 OZ813 rtl8111b
Contextual Info: 5 4 3 2 1 S50IAx REV:D P/N LIST S50IAx Schematics Rev:D PAGE PCB P/N CONTENT PCB ASSY P/N S40II M/B 37GS50000-D0 S40/S50 TOUCH PAD BD S50IA M/B HYNIX 37GS50000-D0 82GS50000-D0 43. S40 MODEM BD S50IA M/B(SAM) 37GS50000-D0 82GS50000-? 44. S50 MODEM WITH USB BD

TRANSISTOR BC 136

Abstract: transistor BD 140 transistor bd 126 BD 140 transistor 16BD136 transistor bc 138 TRANSISTOR 138 TRANSISTOR BD 136 BD 139 transistor transistor bd 711
Contextual Info: TELEFUNKEN ELECTRONIC m ilFW K lIM electronic 17E D • fl^HDD'ib DQ’O TBR^ IALCÛ BD 136 BD 138 Ibd 140 Ci*tirtTtehnotoûte» T-33-17 Silicon PNP Epitaxial Planar Power Transistors Applications: General in AF-range Features: • Power dissipation 8 W • Matched pairs available

BD 143

Contextual Info: Dual Digit LED Displays BD-A/C, BD-E/F Series 7-segment AMERICAN BRIGHT 142 w w w. a m e r i c a n b r i g h t l e d . c o m 714 257-0800 FAX (714) 257-1310 • 2000 American Bright Optoelectronics Corporation. Specifications subject to change without notice.

NT5TU32M16DG

Abstract: Nanya NT5TU32M16DG NT5T NT5TU32M16CG-25C NT5TU32M16CG-3CI NT5TU32M16CG NT5TU32M16CG-25DI nt5tu64m8 B.a Date sheet 2007 DDR2-667
Contextual Info: NT5TU128M4CE / NT5TU64M8CE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -25D/-25DI -25C/-25CI -BD -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6 5-5-5 7-7-7 6-6-6 tCK Avg. 266 333 400 400

sonar block diagram

Abstract: AM-1435MC AM-1435MM AM-1435MM-QL
Contextual Info: BDÆTEL AM-1435 Ultra-Fast, Wideband Operational Amplifiers INNOVATION a n d EXCELLENCE FEATURES • • • • • • 70 nanosecond settling to ±0.01% 1GHz gain bandwidth product 100dB open loop gain 80dB minimum CMRR -5 5 to +125°C operation Industry standard

telemecanique altivar 31 fault codes

Abstract: LC1 D12 wiring diagram telemecanique altivar 08 telemecanique altivar 11 atv11hu18m2a inverter of merlin gerin ATV11HU05M2E wiring diagram altivar 31 ATV11HU29M2E altivar 08
Contextual Info: Variable speed drives for asynchronous motors Altivar 11 Catalogue July at a reduced size!. VVDED202051EN 2002 Real efficiency Schneider Electric Industries SAS Headquarters 89, bd Franklin Roosevelt F - 92506 Rueil-Malmaison Cedex ART. 038998 http://www.schneider-electric.com

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS BD High Ripple, Long Life Series Long Life High reliability withstanding 12000 hours load life at 105 C For power supply and adapter Complied to the RoHS directive Item Characteristics Operating temperature range

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS New BD High Ripple, Long Life Series Long Life High reliability withstanding 12000 hours load life at 105 C For power supply and adapter Complied to the RoHS directive Item Characteristics Operating temperature range

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 2 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 1 ,19 LOC ALL RIGHTS RESERVED. REVISIONS DIST BD 48 P LTR G DESCRIPTION OBSOLETE -3 8 -6, & DATE REDRAWN ON CAD 29 97 OCT PER EC 0420-143-96 DUN APVD TS SB D D

DM6030HK

Abstract: TS3332LD XB1004 XP1022-BD XU1002 TRANSISTOR 9642
Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

Contextual Info: 30.0-36.0 GHz GaAs MMIC Power Amplifier P1017-BD December 2009 - Rev 01-Dec-09 Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 16.0 dB Small Signal Gain +33.0 dBm Third Order Intercept OIP3

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD February 2007 - Rev 05-Feb-07 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

Contextual Info: 17.0-25.0 GHz GaAs MMIC Power Amplifier P1022-BD November 2006 - Rev 15-Nov-06 Features Chip Device Layout Excellent Transmit Output Stage Temperature Compensated Output Detector On-Chip ESD Protection 20.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

NT5TU32M16DG

Abstract: NT5TU32M16 Nanya NT5TU32M16DG RU 3C
Contextual Info: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

N2TU51216

Abstract: N2TU51280DE-BE
Contextual Info: N2TU51280DE / N2TU51216DG Preliminary 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C -AC -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

m430 f

Abstract: Vd100 piconics Resistor m430 S21ANG HOW TO SOLDER PICONICS VIREO usb mp3 module circuit diagram CMM0015-BD CMM0015-BD-000V DM6030HK
Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0015-BD September 2009 - Rev 22-Sep-09 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier September 2009 - Rev 22-Sep-09 CMM0015-BD Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point

nt5tu32m16dg

Abstract: NT5TU32M16DG-AC Nanya NT5TU32M16DG NT5TU32M16DG-BE NT5TU64M8DE NT5TU32M16DG-ACI NT5TU32M16DG-3C NT5TU64M8 NT5TU32M16DG AC NT5TU32M16DG-BD
Contextual Info: NT5TU64M8DE / NT5TU32M16DG 512Mb DDR2 SDRAM Feature CAS Latency Frequency -3C/3CI* -AC/ACI* -BE* -BD* DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Speed Bins Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency

NT5TU128M8DE

Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
Contextual Info: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6

NT5TU128M8GE

Contextual Info: NT5TU128M8GE / NT5TU64M16GG 1Gb DDR2 SDRAM Feature CAS Latency Frequency Speed Bins -3C/3CI -AC/ACI/ACL -BE -BD DDR2-667-CL5 (DDR2-800-CL5) (DDR2-1066-CL7) (DDR2-1066-CL6) Units Parameter Min. Max. Min. Max. Min. Max. Min. Max. tCK(Avg.) Clock Frequency