BCY 12 Search Results

BCY71

Abstract: BCY 107 BCY72 100-C bcy72a bcy70
Contextual Info: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial PNP transistors in Jedec TO-18 metal case. They are intended for general purpose amplifier and switching applica­ tions. ABSOLUTE MAXIMUM RATINGS

65e7

Abstract: BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 Q60203-Y58-G BCY 65 Q60203-Y59-J
Contextual Info: BCY 58, BCY 59, BCY 65 E ~ 2 N 2483 NPN Transistors fo r AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case 18 A 3 DIN 41 876 (TO -18). The collector is electrically connected to the case.

BCY 107

Abstract: BCY 62 BCY71 BCY72 BCY 12 bcy70
Contextual Info: BCY 70 BCY 71 BCY 72 SILICON PLANAR PNP GENERAL PURPOSE APPLICATIONS The BCY 70, BCY 71 and BCY 72 are silicon planar epitaxial F‘NP transistors in Jedec T O -1 8 metal case. They are intended fo r general purpose am p lifie r and switching applica­ tions.

BCY79

Abstract: bcy 78 bcy 79
Contextual Info: BCY 78 BCY 79 PNP SILICON TRANSISTOR TRANSISTOR PNP S ILIC IU M Compì, of BCY 58 and BCY 59 • Switching and amplifier Commutation e t am plification -3 2 V BCY 78 v CEO -4 5 V BCY 79 'c - 2 0 0 mA M a xim u m pow er dissipation Case TO-18 — See outline drawing CB-6 on last pages

BCY 59

Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58
Contextual Info: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver­

bcy580

Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59
Contextual Info: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation

1B57

Abstract: BCY78 BCY79
Contextual Info: SILICON PLANAR PNP BCY78 BCY79 LO W -N O IS E A U D IO A M P L IF IE R S The BCY 78 and BCY 79 are silicon planar epitaxial PNP transistors in Jed ecT O -18 metal case. They are designed fo r use in audio driver and low -noise in p u t stages. The com plem entary NPN types are respectively the BCY 58 and BCY 59.

BCY77

Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in

BCY77VII

Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor
Contextual Info: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in

AS5V

Abstract: Q62702-C254 BCY 85 PNP-Transistoren
Contextual Info: PNP-Transistoren fü r rauscharme N F-Vorstufen BCY 67 BCY 67 ist ein epitaktischer PNP-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41 876 T O -1 8 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist be­ sonders für rauscharme NF-Vorstufen verwendbar (Komplementärtransistoren dazu BCY 66).

TFK 450 B2

Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Contextual Info: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W

tfk 731

Abstract: N100700 bcy 79 BCY58 BCY 65 BCY 59
Contextual Info: BCY 58 • BCY 59 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W 0 Power dissipation 1 W

BCY59

Abstract: BCY58 BcY591
Contextual Info: BCY58 BCY59 SILICON PLANAR NPN LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon planar epitaxial IMPN transistors in Jledec T O -1 8 metal case. They are intended fo r use in audio in p u t stages, driver stages and low-noise in put stages. The com plem entary PNP types are respectively the BCY 78 and !BCY 79.

transistor buv 90

Abstract: BCY 85 Q60203-Y66 BCY 66
Contextual Info: N PN -Transistor fü r rauscharm e N F -V o rs tu fe n BCY 66 BCY 66 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 18 A3 DIN 41876 TO-18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu B C Y 67).

BCY59IX

Abstract: bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii
Contextual Info: MOTORCLA SC XSTRS/R IE E D I F b3b?2S4 00flt.4bfc, T T-M-Äl BCY58 -VII, -Vili, -IX, -X BCY59-VII, -Vili, -IX, -X M A X IM U M R A T IN G S Sym bol BCY 58 BCY 59 Collector-Emitter Voltage VC E O 32 45 Vdc Collector-Emitter Voltage R B E = 10 O hm s VcES

BCY791x

Abstract: bcy791 BCV79-VII BCY79X BCY79IX BCY79-X BCY79 BCY79-VIII BCY78 bcy78 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R 12E D | F b3fci72S4 QGflt.M73 7 | r -y t - z I BCY78-VII, -Vili, -IX, -X BCY79-VII, -Vili, -IX, -X MAXIM UM RATINGS R a tin g Coliector-Em itter Voltage S ym b o l BCY 78 BCY 79 U n it VCEO 32 45 Vdc Co llector-Em ittar Voltage R B E 10 Ohm s

BCY69

Abstract: BCY 69 transistor 468
Contextual Info: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation

transistor tic 106

Abstract: BCY66 AF200 transistor tic 106 N tic 105 Q60203-Y66 tic 246 h tic 246 tic 245
Contextual Info: BCY66 NPN Transistor for low-noise AF pre-stages BCY 66 is an epitaxial NPN silicon planar transistor in a case 18 A 3 DIN 41 876 TO-18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise AF pre-stages.

29Z3

Abstract: Transistor CODE FR m7am
Contextual Info: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided

BCY67

Abstract: HTI 2E 101S Q62702-C254
Contextual Info: BCY67 PNP Transistor for low-noise AF pre-stages BCY 67 is an epitaxial PNP silicon planar transistor in a case 18 A 3 DIN 41 876 T O -18 . The collector is electrically connected to the case. The transistor has been designed for especially low-noise pre-stages as well as in

Contextual Info: 5SC D m 023SbQS Q004312 ì IS I E G NPN Silicon Planar Transistor BCY6 6 7 -1 7 -2 .4 SIEMENS AKTIEN6ESELLSCHAF BCY 66 is an epitaxial NPN silicon planar transistor in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistor is particularly provided for

BCY79

Abstract: BCY78 bcy 78 bcy 79
Contextual Info: BCY78 BCY 79 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The B C Y 78 and B C Y 79 are silicon planar epitaxial P N P transistors in J e d e c T O - 1 8 metal case. T h e y are designed fo r use in audio driver and lo w -n oise in p u t stages. The com plem entary N P N types are respectively the B C Y 58 and B C Y 59.

BCY59

Abstract: BCY58
Contextual Info: BCY 58 BCY59 SILICON PLANAR NPN LOW-NOISE A UDIO AM PLIFIERS The B C Y 5 8 and B C Y 5 9 are s ilic o n p la n a r e p ita x ia l NPN tran sisto rs in Jedec T O -1 8 m etal case. T he y are in te n de d fo r use in au d io in p u t stages, d riv e r stages and lo w -n o is e in p u t stages.

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V