BCX5616Q Search Results

Contextual Info: BCX5616Q 80V NPN MEDIUM POWER TRANSISTORS IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features     BVCEO > 80V Ic = 1A High Continuous Collector Current

Marking BA SOT89

Abstract: BCX5616TA BCX56TA bcx56-16t bcx54ta
Contextual Info: BCX 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features • • • • • • • • Mechanical Data • • Ic = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction

AECQ-101

Abstract: AECQ101 BCX5616TA
Contextual Info: BCX 54 /55 /56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Features Mechanical Data • • • • • • • • • • • Ic = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain Groups 10 and 16 Epitaxial Planar Die Construction

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

Contextual Info: BCX5316Q 80V PNP MEDIUM POWER TRANSISTOR IN SOT89 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound

Contextual Info: BCX 54 / 55 / 56 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89 Mechanical Data Features • • • • • • • • • • Ic = 1A Continuous Collector Current Low Saturation Voltage VCE sat < 500mV @ 0.5A Gain groups 10 and 16 Epitaxial Planar Die Construction