BCR08AS Search Results

REJ03G0292-0100

Abstract: BCR08AS-12A BCR08AS-12 BCR08AS-12A-T13
Contextual Info: BCR08AS-12 Triac Low Power Use REJ03G0292-0100 Rev.1.00 Aug.20.2004 Features • • • • • Non-Insulated Type • Planar Passivation Type IT RMS : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGTⅢ : 5 mA IFGTⅢ : 10 mA Outline SOT-89 2, 4 4 1 2 3 3 1. 2. 3.

Contextual Info: Preliminary Datasheet BCR08AS-12A R07DS0134EJ0500 Previous: REJ03G0292-0400 Rev.5.00 Sep 15, 2010 Triac Low Power Use Features •        IT (RMS) : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT III : 5 mA IFGT III : 10 mA Non-Insulated Type

REJ03G0292-0200

Abstract: BCR08AS-12 BCR08AS-12A-T14 PLZZ0004CA-A hybrid ic sc ka BCR08AS
Contextual Info: BCR08AS-12 Triac Low Power Use REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Features • • • • • Non-Insulated Type • Planar Passivation Type • Completed Pb Free IT RMS : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT : 5 mA IFGT : 10 mA Outline RENESAS Package code: PLZZ0004CA-A

Contextual Info: Preliminary Datasheet BCR08AS-14A R07DS0970EJ0001 Rev.0.01 Nov 28, 2012 700V - 0.8A - Triac Low Power Use Features •     Non-Insulated Type  Planar Passivation Type  Surface Mounted Type IT RMS : 0.8 A VDRM : 700 V IFGTI, IRGTI, IRGTIII : 5 mA

bcr8dm

Contextual Info: POUEREX INC TL DE:j 7 a ,:14bEl □□DIADI D T - z ^ - /i" TRIACS I t rms l* t Te= 80° C 360° C onduction (Amps) fa r .8 T c = 4 8 eC ITSM (Amps) SO Hz 60 Hz Fuslng @ 8.3 ms (A2sec) R e jc (°C/W ) Jun ction Temp. Range (°C) Max Vgt (Volts) Max Vgd A ll

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

M52777SP

Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid