MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
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06050lmmbd914lbas16lbal99l+16mbav70lmbav99lmbav74bd2835xlmbd2836xlmmbd2837xlmmbf112lmfe521mmbf1122n3797 equivalentmfe131 equivalentmps5210bc557 sot238c448bc459cmfe211
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marking code MS SOT323
Abstract: BC846 BC850 BC856 BC856A BC856B BC856BW BC857A BC857B BC860
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
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bc856-bc860bc846-bc850+9bc856abc856bbc856bwot323marking code ms sot323bc850bc857abc857bbc860
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MARKING 3FS
Abstract: MARKING CODE 21E SOT23 marking 3ks
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29
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bc856-bc860bc846-bc850+7bc856abc856bbc856bwbc857amarking 3fsmarking code 21e sot23marking 3ks
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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transistors bc 557cbf366smd code 307cf199 transistor+62n5793bc413motorola zener diode marking code z7equivalent of transistor bc212 bc 214bc107c motorola2n555
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transistor packing code 3f
Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
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bc856-bc860bc846-bc850+9bc856abc856bbc856bwod323transistor packing code 3fmarking 3ksbc857abc857awbc850
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BC859AL
Abstract: BC860CL BCB60 BC860BL BC559 BC859 BC859BL BC859CL BC860 BC860AL
Contextual Info: ÌZ E I M A X IM U M RATINGS Symbol Rating BC859 U nit V Collector-Emitter Voltage VCEO 45 30 VCBO 50 30 V Emitter-Base Voltage Ve b o 6.0 5.0 V ic 100 100 mAdc Characteristic Symbol Max PD 225 mW 1.8 mW/°C Thermal Resistance Junction to Ambient Roja 417
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bc860bc859bc859albc859bl+7bc859clbc860albc860blbc860cl860clbcb60bc559
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MARKING 3FS
Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)
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bc856-bc860bc846-bc850+11bc856abc856bbc856bwot323marking 3fsmarking 3bsbc846 infineonbc857 3fsbc857bl3bc860bwbc857a
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top marking 1B sot23
Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)
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bc856-bc860bc846-bc850+14bc856abc856bbc856bwbc857atop marking 1b sot23marking 3bs3bs marking codebc856-bc8603bs markingmarking 3gsmarking 3lssot23 3ks3fs marking transistor3fs sot23
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