BC807 Search Results
BC807 Datasheets (500)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| BC807 | AUK | PNP Silicon Transistor (High current application Switching application) | Original | 84.17KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Continental Device India | Silicon Planar Epitaxial Transistors | Original | 46.5KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Diodes Incorporated | 200V N-channel enchancement mode DMOS transistor. For switching and AF amplifier applications | Original | 63.08KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Diodes Incorporated | PNP SURFACE MOUNT TRANSISTOR | Original | 58.19KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Diotec | Surface mount Si-Epitaxial PlanarTransistors | Original | 118.97KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Fairchild Semiconductor | PNP Epitaxial Silicon Transistor | Original | 71.65KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | General Semiconductor | Small Signal Transistors (PNP) | Original | 251.61KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Infineon Technologies | PNP Silicon AF Transistors | Original | 47.32KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Kexin | PNP Silicon AF Transistors | Original | 37.82KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Korea Electronics | TRANS GP BJT PNP 45V 0.8A 3SOT-23 | Original | 75.2KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Leshan Radio Company | General Purpose Transistors(PNP Silicon) | Original | 49.1KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | NXP Semiconductors | BC807 - 45 V, 500 mA PNP general purpose transistors - Complement: BC817 ; fT min: 80 MHz; hFE max: 600 ; hFE min: 100 ; IC max: 500 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V | Original | 224.41KB | 19 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | PanJit Semiconductors | PNP GENERAL PURPOSE TRANSISTORS | Original | 489.03KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Philips Semiconductors | PNP General Purpose Transistor | Original | 51.44KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Philips Semiconductors | Silicon Planar Epitaxial Transistor | Original | 140.84KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Philips Semiconductors | Silicon Planar Epitaxial Transistor | Original | 88.25KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Rectron Semiconductor | Original | 23.16KB | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Siemens | PNP Silicon AF Transistors (For general AF applications High collector current High current gain) | Original | 135.05KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Siemens | Cross Reference Guide 1998 | Original | 27.35KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BC807 | Siemens | RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide | Original | 465.63KB | 37 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BC807 Price and Stock
onsemi BC807-40LT1GTransistor: PNP; bipolar; 45V; 0.5A; 0.225W; SOT23,TO236AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC807-40LT1G | 85,378 | 1 |
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BC807-40LT1G | Tape & Reel | 930,000 | 55 Weeks | 3,000 |
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BC807-40LT1G | 192,000 |
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BC807-40LT1G | 218,400 |
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BC807-40LT1G | 57 Weeks | 57,000 |
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BC807-40LT1G | 504,000 | 53 Weeks | 3,000 |
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BC807-40LT1G | 192,000 |
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onsemi BC807-40WT1GTransistor: PNP; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC807-40WT1G | 25,488 | 1 |
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BC807-40WT1G | Bulk | 1 |
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BC807-40WT1G |
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BC807-40WT1G | 58 Weeks | 33,000 |
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BC807-40WT1G | 294,000 | 52 Weeks | 3,000 |
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BC807-40WT1G | 81,000 | 53 Weeks | 3,000 |
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Diotec Semiconductor AG BC807-25-AQTransistor: PNP; bipolar; 50V; 0.8A; 310mW; SOT23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC807-25-AQ | 5,100 | 1 |
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PanJit Semiconductor BC807-40_R1_00001Transistor: PNP; bipolar; 45V; 0.5A; 0.33W; SOT23 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC807-40_R1_00001 | 4,752 | 1 |
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Nexperia BC807-16W-QXTransistor: PNP; bipolar; 45V; 0.5A; 290mW; SC70,SOT323 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BC807-16W-QX | 4,285 | 1 |
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BC807 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BC807-40Contextual Info: BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type Marking BC807-25 5B BC807-40 5C s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■ |
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bc807-25bc807-40ot-23bc817-25+1 | |
BC817 Spice
Abstract: BC807 spice model BC807 BC817-16 BC817-16-7 BC817-25 BC817-40 J-STD-020A marking code 6B
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bc817-16bc817-25bc817-40bc807+8 | |
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Contextual Info: SST / SOT-23 BC807 SST BC807 |
Original |
ot-23bc807 | |
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Contextual Info: BC807W PNP General Purpose Transistor FEATURES • Ideally suited for automatic insertion • Epitaxial planar die construction • Complementary to BC817W MECHANICAL DATA • Case: SOT-323 Plastic • Case material: “Green” molding compound, UL flammability classification 94V-0, No Br. Sb. CI |
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bc807wbc817wot-3232002/95/ec | |
UTC markingContextual Info: UTC BC807/BC808 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC817 / BC818 2 1 3 SOT-23 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise noted |
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bc807/bc808bc817bc818ot-23+4 | |
BC807Contextual Info: DC COMPONENTS CO., LTD. BC807 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in drive and output stages of audio amplifiers. SOT-23 .020 0.50 .012(0.30) Pinning 1 = Base 2 = Emitter 3 = Collector |
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bc807ot-23-500ma-50ma+4 | |
smd 9FB
Abstract: marking 9fb SMD MARKING 9fB marking AF BC807 KC807-25 KC807-40
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Original |
kc807bc807ot-23300ma+7 | |
BC817Contextual Info: BC817-16W/-25W/-40W 45V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion • • Epitaxial Planar Die Construction • • Complementary PNP Types: BC807-xxW Case: SOT323 Case Material: molded plastic, “Green” molding compound |
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bc817-16w/-25w/-40wbc807-xxwot323aec-q101+4 | |
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Contextual Info: MCC TM Micro Commercial Components BC807-16 BC807-25 BC807-40 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • PNP Silicon General Purpose Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates |
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bc807-16bc807-25bc807-40-55oc+2 | |
smd 5H transistor
Abstract: 5g smd transistor SMD TRANSISTOR MARKING 5c bc807 SMD TRANSISTOR MARKING 5H SMD TRANSISTOR MARKING 5c SMD TRANSISTOR MARKING 5G 5B smd transistor data smd transistor 5c sot-23 BC807 smd 5F smd transistor
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ot-23bc807bc808bc807-40+10 | |
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Contextual Info: MOTOROLA Order this document by BC807-16LT1/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors PNP Silicon COLLECTOR 3 BC807-16LT1 BC807-25LT1 BC807-40LT1 1 base " 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C o lle c to r-E m itte r Voltage |
OCR Scan |
bc807-16lt1/dbc807-16lt1bc807-25lt1bc807-40lt1+1 | |
bc818
Abstract: BC807 BC808 BC817 BC807 SOT23
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bc807bc808bc817ot-23+2 | |
BC807-25-AUContextual Info: BC807-AU SERIES PNP GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 330 mWatts FEATURES • General purpose amplifier applications 0.120 3.04 • PNP epitaxial silicon, planar design 0.110(2.80) • Collector current I C = 500mA • • • • Acqire quality system certificate : TS16949 |
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bc807-au500mats16949aecq101+6 | |
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Contextual Info: BC807 SERIES PNP GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 330 mWatts SOT-23 Unit:inch mm FEATURES • General purpose amplifier applications 0.120(3.04) 0.110(2.80) • PNP epitaxial silicon, planar design • Collector current I C = 500mA • Lead free in comply with EU RoHS 2002/95/EC directives. |
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bc807500ma2002/95/eciec61249+5 | |
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BC807-16W
Abstract: BC807 BC807-25W BC807-40W BC817W
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bc807ot-323bc817wbc807-16w+6 | |
BC807
Abstract: BC817-16 BC817-16-7 BC817-25 BC817-40 J-STD-020A
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bc817-16bc807ot-23j-std-020a+7 | |
BC807
Abstract: BC807-16LT1 BC807-25LT1 BC807-40LT1
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bc80716lt1/dbc807-16lt1bc807-25lt1+3 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 Lead-free: BC807L/BC808L Halogen-free:BC807G/BC808G |
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bc807/bc808bc817bc818bc807l/bc808l+6 | |
BC807N3
Abstract: 9F marking sot23 pnp marking 9f C905N
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Original |
c905n3bc807n3ot-23/sc-59bc817n3+5 | |
all ic data
Abstract: 500ma 40v pnp all ic datasheet MV SOT23 PNP POWER TRANSISTOR SOT23 25 V 500mA TRANSISTOR SOT23 PARTMARKING at BC807 BC80716 BC80725
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bc807bc80716bc80725bc80740+11 | |
marking 5a1 sot23Contextual Info: MCC BC807-16 BC807-25 BC807-40 omponents 21201 Itasca Street Chatsworth !"# $ % !"# Features • • • • PNP Silicon General Purpose Transistors Capable of 0.3Watts of Power Dissipation. Collector-current 0.5A |
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bc807-16bc807-25bc807-40ot-23+3 | |
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Contextual Info: BC807 SERIES PNP GENERAL PURPOSE TRANSISTORS 45 Volts VOLTAGE POWER 330 mWatts SOT-23 Unit inch mm FEATURES • General purpose amplifier applications 0.120(3.04) 0.110(2.80) • PNP epitaxial silicon, planar design • Collector current I C = 500mA • Lead free in comply with EU RoHS 2002/95/EC directives. |
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bc807ot-23500ma2002/95/ec+5 | |
lt 8227Contextual Info: Page Products S p e c if ic a t io n SST / SOT-23 BC807 Type F D '.'514-807 1. B C 8 SCOPE 1 .1 07 T h is s p e c i f i c a t io n co v e rs the d e t a i l re q u irem e n ts one type P N P ¡s ilic o n e p it a x i a l p la n a r t r a n s is t o r fo r |
OCR Scan |
ot-23bc807ig-8227bc807-16+2 | |
BC807
Abstract: BC807-16 BC807-25 BC807-40 BC817 RJSB
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bc807-16/bc817aec-q101ot-23+9 | |