BC639 DATA Search Results

BC639

Abstract: BC639-16 BC639G BC63 BC639 pin details BC637G BC639RL1G BC637 BC637RL1G bc637 050
Contextual Info: BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC637 BC639 BC637 BC639 Emitter - Base Voltage

Contextual Info: BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Symbol Rating Collector - Emitter Voltage BC637 BC639 Collector - Base Voltage BC637 BC639 Emitter - Base Voltage

BC639

Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050
Contextual Info: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 Emitter-Base Voltage

BC639 pin details

Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639 BC639RL1 BC639ZL1
Contextual Info: BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC635 BC637 BC639 Collector-Base Voltage

BC639 pin details

Abstract: BC639 application note BC639G BC639 BC639 18 transistor BC639 BC635 BC635RL1 BC63916 BC635ZL1
Contextual Info: BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector - Base Voltage

BC639G

Abstract: BC639 BC639RL1G BC639ZL1G BC63 BC637 BC637G BC639 application note BC639-16ZLT1
Contextual Info: BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC637 BC639 Collector - Base Voltage Vdc 60 80 1 EMITTER

bc639

Abstract: BC639 data 24825 BC635 application note BC635 BC635-16 BC636 BC637 BC637-16 BC639-10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639

BC637

Abstract: BC639 BC635 BC635-16 BC636 BC637-16 BC638 BC639-10 BC640 bc639 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639

bc639 equivalent

Abstract: BC639
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC635 BC637 BC639 NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO

bc637 motorola

Abstract: bc639 motorola bc637 bc639 bc635
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC635 BC637 BC639 NPN Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS Symbol BC635 BC637 BC639 Unit C ollector-E m itter Voltage VCEO 45 60 80 Vdc C ollector-B ase Voltage v CBO 45 60 80 Vdc Rating

BC639RL1

Abstract: BC639ZL1 BC635 BC635RL1 BC635ZL1 BC637 BC639
Contextual Info: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR

Contextual Info: BC63916 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method BC63916_D74Z BC639-16 TO-92 3L Ammo BC63916_D27Z BC639-16 TO-92 3L

BC639

Abstract: BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1
Contextual Info: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR

BC635 TRANSISTOR E C B

Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification

c63916

Abstract: c63910 transistor C639 transistor c63916 c639 transistor C63910 cbc639 bc639 bc639 nxp c639 equivalent
Contextual Info: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistors Rev. 08 — 22 June 2007 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1. Product overview Type number[1] Package PNP complement NXP JEITA

bc640

Abstract: transistor bC640 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR transistor c 458 bc640 pnp
Contextual Info: BC640 PNP Epitaxial Silicon Transistor BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter

BC639 MOTOROLA

Abstract: transistors BC 293 BC635 BC637 BC639 BC635 MOTOROLA
Contextual Info: MOTOROLA Order this document by BC635/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC635 BC637 BC639 NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 635 BC 637 BC 639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage

bc639

Abstract: BC635 TRANSISTOR E C B applications of Transistor BC639 BC635-16 BC637
Contextual Info: Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Driver stages of audio/video amplifiers.

transistor bC640 OF CDIL

Abstract: BC639 bc639 npn BC635 TRANSISTOR E C B BC635 BC636 BC637 BC638 BC640 NPN, PNP for 500ma, 30v
Contextual Info: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC637 BC639 NPN BC636 BC638 BC640 PNP TO-92 Plastic Package E CB Driver Stages of Audio Amplifiers Applications

bc640

Abstract: transistor bc640 transistor c 458 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR applications of Transistor BC640
Contextual Info: BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units V VCER Collector-Emitter Voltage at RBE=1KΩ

bc736

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • C om plem ent to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Em itter V oltage at R be =1 Kohm : BC635 : BC637 : BC639

Contextual Info: N AUER PHILIPS/DISCRETE b^E ]> • £,^53^31 □D27SC3D T7T ■ APX BC635; BC637; BC639 A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. P-N-P complements are BC636, BC638 and BC640.

BC640

Abstract: BC638 BC636 bc639 bc638-10 BC635 BC636-10 BC637 bc636 npn transistor Silicon Epitaxial Planar Transistor philips
Contextual Info: N AUER PHILIPS/DISCRETE bTE T> • bbS3R31 □OSTS'ib 4=17 ■ APX BÜ636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended for use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.

Contextual Info: N AUER PHILIPS/DISCRETE b'lE ]> • bbS3R31 □QSTS'lb Ml? « A P X BC636; BC638; BC640 A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in a plastic TO-92 envelope, primarily intended fo r use in driver stages of audio amplifiers. N-P-N complements are BC635, BC637 and BC639.