BC372 TRANSISTOR Search Results

BC373

Abstract: transistors BC372 BC372
Contextual Info: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage

BC372

Abstract: BC373
Contextual Info: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage

BC373

Abstract: BC372 TO226AA
Contextual Info: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit C o lle c to r-E m itte r Voltage VCES 100 80 Vdc C o lle c to r-B a s e Voltage

BC373RL1G

Abstract: BC373R BC372 BC372G BC373 BC373RL1
Contextual Info: BC372, BC373 High Voltage Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC372 BC373 Collector −Base Voltage

BC373RL1G

Abstract: BC373 BC372 BC372G BC373G BC373RL1 BC373ZL1 BC373ZL1G BC373R
Contextual Info: BC372, BC373 High Voltage Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC372 BC373 Collector −Base Voltage

Contextual Info: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector −Emitter Voltage VCES 100 80 Vdc Collector −Base Voltage VCBO 100 80 Vdc Emitter −Base Voltage VEBO 12 Vdc Collector Current — Continuous

bc373

Abstract: BC372
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC372 BC373 80 Vdc 80 Vdc VCES 100 C ollector-B ase Voltage VCBO 100 E m itte r-B a se Voltage

BC272

Contextual Info: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous

BC372

Abstract: BC373
Contextual Info: BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 2 Vdc Collector Current — Continuous

bc272

Abstract: BC372 BC373 DSA0011025
Contextual Info: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector- Emitter Voltage VCES 100 80 Vdc Collector-Base Voltage v CBO 100 80 Vdc Emitter-Base Voltage

bc373 equivalent

Abstract: BC372 equivalent BC237 JC 201 SC
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage VCES

TRANSISTOR 318

Abstract: Transistor BC373 BC373 BC372 BC373 TRANSISTOR bc372 transistor BC3735 BC372-5 T092 bc3725
Contextual Info: BC372 BC373 NPN SILICON HIGH VOLTAGE . . . designed foruserelay DAR LINGTON driver and all inductive load applications. . High Collector-Emitter BVCES Breakdown Voltage 100 V at 100 PA for BC372 -80 V at 100 VA for BC373 ● High Current gain lc- . 100/mAdc,

Contextual Info: PART OBSOLETE - USE ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 – SEPT 93 FEATURES * 100 Volt VCEO * Gain of 8k at IC=250mA * IC=1 Amp E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 - SEPT 93_ FE A T U R E S * 100 Volt V CE0 * * Gain of 8k at lc=250mA lc=1 Amp ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT

BC372

Abstract: ic-250mA CTO-92
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 – SEPT 93 FEATURES * 100 Volt VCEO * Gain of 8k at IC=250mA * IC=1 Amp E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage

ic-250mA

Contextual Info: Not Recommended for New Design Please Use ZTX603 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 – SEPT 93 FEATURES * 100 Volt VCEO * Gain of 8k at IC=250mA * IC=1 Amp E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

Contextual Info: BC372-16 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)80 h(FE) Min. Current gain.10k

2904 kd

Contextual Info: BC372 BC373 M AXIM UM RATINGS Symbol BC 372 BC 3 73 Collector-Emitter V oltage Rating VCES 100 80 Vdc C ollector-Base V oltage VCBO 100 80 V dc Em itter-Base V oltage U nit CASE 29-04, STYLE 1 TO-92 TO-226AA vebo 12 V dc Collector Current — C o n tin u o u s

Transistors nd RR

Abstract: 8C372
Contextual Info: BC372 BC373 M A X IM U M R A T IN G S Symbol 8C372 BC373 C o lle ctor-E m itter Voltage VCES 100 80 Vdc C ollector-Base Voltage V CB O 100 80 Vdc Em itter-Base Voltage Rating Unit CASE 29-04, STYLE 1 TO-92 TO-226AA vebo 12 Vdc C ollector C urrent — C ontinuous

BC372

Abstract: bc373 BC373-25 BC373-16 to 92 case BC 372
Contextual Info: MOT ORO LA SC 12E D I t3b72SM QGÔSÔ53 1 | X S TR S/R F 7 BC372, -16, -25, -40 BC373, -16, -25 M A X IM U M RATINGS BC 373 U nit 100 80 Vdc 100 80 Vd c Sym bol BC 372 Collector-Emitter Voltage VC E O Collector-Base Voltage VCBO Em itter-Base Voltage R a tin g

TO226AA

Abstract: 226AA
Contextual Info: Bipolar Transistors Low Noise and Good hFE Linearity NPN − BC550C PNP V BR CEO IC mA Max Min Max hFE fT MHz Min NF dB Max 2N5087 50 50 250 800 40 2.0 BC560C 45 100 380 800 250 (Typ) 2.5 MPSA18 − 45 200 500 − 100 1.5 2N5088 − 30 50 350 − 50 3.0 2N5089

MPSA25

Abstract: BC517 CBE 2N6426 2N6427 BC372 BC373 BC617 BC618 MPSA12 MPSA13
Contextual Info: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Darlington Transistors (TO-92) Darlington amplifiers are cascade transistors used in applications requiring very high gain and input impedance. These devices have monolithic construction. Absolute M ax. Rating at 2 5 °C

low noise transistors bc638

Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22