BC337-16 ITT Search Results

OF TRANSISTOR BC337

Abstract: TRANSISTOR BC337-25 transistor 33725 TN3019A bc337 m transistor BC337-16 BC337-16 BC337-25 CBVK741B019 F63TNR
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

bc337 cross-reference

Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
Contextual Info: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

CBC337

Abstract: BC337 BC337 figure MOTOROLA bc338-40 BC337 MOTOROLA NPN bc338 BC338 bc337-40 le
Contextual Info: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN Silicon BC337,- 16,-25,-40 BC338,- 16,-25,-40 COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle c to r-E m itte r Voltage VCEO 45 25 Vdc

C 337-25

Abstract: C 33725 BC337-25 NPN general purpose transistor BC337 BC337-16 BC337 NPN transistor datasheet BC337 bc33716 BC-337-16 BC33725
Contextual Info: BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings*

C 337-25

Abstract: BC337 figure BC337 MOTOROLA bc338-40 BC337-40 SBC337
Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN Silicon BC337,-1 6 ,-2 5 ,-4 0 B C 338,-16 ,-2 5 ,-4 0 COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC337 BC338 25 Vdc 30 Vdc Unit VCEO 45 C ollector-B ase Voltage

C 337-25

Abstract: BC337-25 bc33725 BC337-16 BC-337-16 bc33716 BC337
Contextual Info: S E M IC O N D U C T O R tm BC337-16 BC337-25 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 m A. Sourced from Process 12. See TN 3019A for characteristics. Absolute Maximum RâtinÇjS

cbf420

Abstract: BC556A BS170 116 BC558A BC549B NPN 2n3904 2N3904 cbf421 BC546A BC338-16
Contextual Info: List of Types Type Page Type Page Small-Signal Transistors NPN Small-Signal Transistors (PNP) 2N3904 2N4124 BC337-16, -25, -40 BC338-16, -25, -40 BC546-A, -B BC547-A, -B, -C BC548-A, -B, -C BC549-B, -C BC817-16, -25, -40 B C 8 1 8 -1 6,-25, -40 BC846-A, -B

BC337 ITT

Abstract: 8C338 BC337 BC337 leads pin configuration Bc337 bc338 complementary pin configuration Bc338
Contextual Info: BC337, BC338 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suit­ able for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current

C 337-25

Abstract: C 33725 BC337-16 BC-337-16 BC337-25 bc33716 NPN 33725 BC337 33725
Contextual Info: S E M IC O N D U C T O R tm BC337-16 BC337-25 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r use as g e n e ra l pu rp o se a m p lifie rs a n d sw itches requiring collecto r c u rrents to 500 m A. S o u rce d from P roce ss 12. S e e T N 3 0 1 9 A fo r ch a ra c te ris tic s.

BC337 MOTOROLA

Abstract: BC337 BC337 figure
Contextual Info: MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle ctor-E m itter Voltage v CEO 45 25 Vdc C ollector-Base Voltage v CBO 50 30 Vdc Em itter-Base Voltage v EBO 5.0 Vdc Collector C urrent — Continuous 'c 800 m Adc TDtal Device D issipation ui T a = 25'C

BC337

Abstract: TRANSISTOR BC338 bc337 fairchild TRANSISTOR bc337 40 BC-337 bc337 transistor BC338-25 BC337 NPN transistor NPN TRANSISTOR BC337 40 BC337 hfe
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 337/BC 328 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage

Contextual Info: BC337, BC338 Small Signal Transistors NPN TO-92 _ FEATURES_ NPN Silicon Epitaxial Planar Transistors for switching and am plifier applications. Especially suitable for AF-driver stages and low power output stages. .098 ( 2 . 5 ) *

BC327

Abstract: BC328 BC337 BC338 C338 BC327-25
Contextual Info: Rating Symbol BC327 BC328 -2 5 Vdc -3 0 Vdc VcEO -4 5 Collector-Base Voltage v CBO -5 0 Emitter-Base Voltage Collector-Emitter Voltage Unit V ë BO -5 .0 Vdc Collector Current — Continuous 'c -8 0 0 mAdc Total Device Dissipation @ Ta = 25”C Derate above 25°C

BC338C

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC337/338 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC337/BC 328 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage

DS21

Abstract: BC337 bc337 transistor
Contextual Info: BC337 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR /Li T E M I ri / POWERSEMICONDUCTOR I Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation kM MM TO-92 Mechanical Data_

OF TRANSISTOR BC337

Abstract: BC337 leads
Contextual Info: BC337 VISHAY NPN EPITAXIAL PLANAR TRANSISTOR / u T E M ir I POWER SEMICONDUCTOR J Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E J L A TO-92

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

BC337

Abstract: DS21610
Contextual Info: BC337 NPN EPITAXIAL PLANAR TRANSISTOR Features Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation T B TO-92 Mechanical Data Case: TO-92, Plastic Leads: Solderable per MIL-STD-202,

TRANSISTOR pnp BC328

Abstract: BC327 BC328 BC337 pnp transistor
Contextual Info: BC327/328 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-ORIVER STAGES AND LOW POWER OUTPUT STAGES •Complement to BC337/BC338 AB SO LU TE MAXIMUM RATINGS Ta = 25°C Characteristic Sym bol C ollector Em itter Voltage

10D3

Abstract: 1G14 C 337-40
Contextual Info: NPN TRANSISTORS ITT SEMICOND/ INTERMET ALL 3ME D • 4böH711 0002443 5 ■ ISI T - 3 i - o \ NPN Silicon Transistors with plastic package 10D3 according to DIN 41870 ='TO-92 . On special request, these transistors will also be produced with TO -18 pin configuration.

I3C327

Abstract: BC327 BC328 cbc327 103 ma BC327/BC328 transistor bc 102 BC337 BC338 BC 160
Contextual Info: BC327, BC328 PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdivided into three groups -1 6 , - 2 5 and - 4 0 , according to their DC current gain. As com ­

diode LT 1n4007

Abstract: transistor BC337 bc337 transistor Zener diode 9.1 22 pf trimmer 100A1R3BP50 22 pf trimmer capacitor 100A101JP50 3 pin TRIMMER capacitor 1n4007 mttf
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA TP V 5055B The RF Line UHF Linear Power Transistor 50 W — 470 to 860 MHz UHF LINEAR POWER TRANSISTOR NPN SILICON . . . designed fo r o u tp u t stages in Band IV & V TV tra n s m itte r a m plifiers. Interna! m a tch ­

TRIMMER capacitor 160 pF

Abstract: transistor BC337 TRIMMER capacitor 10-40 pf 22 pf trimmer capacitor 1n4007 mttf linear amplifier 470-860 Zener diode 9.1 470-860 mhz Power amplifier 5 w capacitor c3b TPV5055B
Contextual Info: MOTOROLA SC XSTRS/R F b3L7254 O I D Q W fc^E J> 037 HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line U H F Lin ear P o w er TVansistor . . . d e sig n e d fo r o u tp u t sta g e s in B and IV & V T V tra n sm itte r am plifiers. Internal m a tc h in g o f b o th in p u t a nd o u tp u t a lo n g w ith u se o f a p u s h -p u ll p a c k a g e